• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.575-579
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• 2008

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.413-416
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• 2004

In this study, zinc oxide(ZnO) having large misfit(18.2%) with sapphire was tried to be grown on very thin nitride buffer layers. For the creation of various kinds of nitride buffer layer, sapphire surface was modified by an irradiation of nitrogen ion beam with low energy generated from stationary plasma thruster(SPT) at room temperature. After the irradiation of ion beam, Al-N and Al-O-N bonding was identified to be formed as nitride buffet layers. Surface morphology was measured by AFM and then ZnO growth was followed by pulsed laser deposition(PLD). Their properties are analyzed by XRD, AFM, TEM, and PL. We observed that surface morphology was improved and deep level emission related to defects was almost vanished in PL spectra from the ZnO grown on nitride buffer layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.419-420
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• 2008

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1220-1221
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• 2008

Submicron-sized conical-type tungsten(W) field-emitters based on carbon nanotubes(CNTs) are fabricated with the configuration of CNTs/catalyst(Ni)/buffer(Al/Ni/TiN)/W-tip. This study focuses on elucidating how the Al/Ni/TiN stacked buffer layer affects the structural properties of CNTs and the electron-emission characteristics of CNT-emitters. Field-emission scanning electron microscopy(FESEM), high-resolution transmission electron microscopy(HRTEM), and x-ray photoelectron spectroscopy(XPS) are used to monitor the nanostructures, surface morphologies, chemical bonds of all the catalysts and CNTs grown. The crystalline structure of CNTs is also characterized by Raman spectroscopy. Furthermore, the measurement of field-emission characteristics for the field-emitters fabricated shows that the emitter using the Al/Ni/TiN stacked buffer reveals the excellent performances.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.5
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• pp.801-804
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• 2006

[ $GdAlO_3(GAO)$ ] buffer layer for $YBa_2Cu_3O_{7-{\delta}}(YBCO)$ coated superconductor wire was fabricated by sol-gel processing. Precursor solution was prepared by dissolving 1:1 stoichiometric quantaties of gadolinium nitrate hexahydrate and aluminum nitrate nonahydrate in methanol. The solution was spin-coated on $SrTiO_3(STO)$(100) single crystal substrates and heated at $1000^{\circ}C$ for 2h in wet $N_2-5%\; H_2$, atmosphere. A SEM(scanning electron microscopy) observation of the surface morphology of the GAO layer has shown that it has a faceted morphology indicating epitaxy. It was shown from x-ray diffraction(XRB) that GAO buffer layer was highly c-axis oriented epitaxial thin film with both good out-of-plane($FWHM=0.29^{\circ}$ for the (002) reflection) and in-plane ($FWHM=1.10^{\circ}$ for the {112} reflection) alignment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.89-90
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• 2009

Three kind of surface-leakage-test-patterns were fabricated and measured in order to investigate the surface leakage current of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall. The pattern which contain the mesa wall has the largest surface leakage current among them. The leakage current due to the mesa wall is predominant source of the leakage current of AlGaN/GaN devices.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.272-277
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• 1995

We report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, AlGaN/GaN double heterostructure (DH) and AlGaN/GaInN DH which prepared on a sapphire substrate using an AIN buffer-layer by the nietalorganic vapor phase epitaxy (MOVPE) method. The peak wavelength of the stimulated emission at RT from AIGaN/GaN DH is 369nm and the threshold of excitation pumping power density (P$\_$th/) is about 84kW/cm$\^$2/, and they from AlGaN/GaInN DH are 402nm and 130kW/cm$\^$2/ at the pumping power density of 200kW/cm$\^$2/, respectively. The P$\_$th/ of AIGaN/GaN and AlGaN/GaInN DHs are lower than the single layers of GaN and GaInN due to optical confinement within the active layers of GaN and GaInN, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.53-56
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• 2002

The effect of $\alpha$-septithiophene (${\alpha}-7T$) layers on the organic light emitting diode(OLED) was studied. The ${\alpha}-7T$ was used for a buffer layer in OLED. Hole injection was investigated and improved emission efficiency. The OLEDs structure can be described as indium tin oxide(ITO)/ buffer layer / hole transporting layer / emitting layer / electron transporting layer / LiF / Al. The hole transporting layer were composed of N,N-diphenyl-N,N-di(3-methylphenyl)-1,1-biphenyl-4,4-diamine(TPD), and N,N-di(naphthalene-1-ly)-N,N-diphenyl-benzidine( ${\alpha}$-NPD). The emitting layer, and electron transporting layer consist of tris(8-hydroxyquinolinato) aluminum($Alq_3$). All organic layer were deposited at a background pressure of less than $10^{-6}$ torr using ultra high vacuum (UHV) system. The ${\alpha}-7T$ layer can substitute the hole blocking layer, and improve hole injection properties.

• Current Applied Physics
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• v.18 no.12
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• pp.1592-1599
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• 2018

The present study deals with the effect of dual cathode buffer layer (CBL) on the performance of bilayer of 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) and fullerene (C70)-based organic solar cell (OSC) with low donor concentration. OSC devices with CBLs have been fabricated using thermal vapor deposition technique. We report the use of lithium fluoride (LiF) and molybdenum trioxide ($MoO_3$) as CBLs. The insertion of LiF between C70 and aluminium (Al) electrode enhances the power conversion efficiency (PCE) of device from 1.89% to 2.47% but quenching of photogenerated excitons is observed at interface of C70 and LiF layers. Incorporation of $MoO_3$ between LiF and Al electrode further enhances PCE of device to 3.51%. This has also improved the material quality and device properties, by preventing the formation of gap states and diminishing exciton quenching.