• Journal of Powder Materials
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• v.13 no.6 s.59
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• pp.432-438
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• 2006

Aluminum nitride (AlN) nanopowders with low degree of agglomeration and uniform particle size were synthesized by carbothermal reduction of alumina and subsequent direct nitridization. Boehmite powder was homogeneously admixed with carbon black nanopowders by ball milling. The powder mixture was treated under ammonia atmosphere to synthesize AlN powder at lour temperature. The effect of process variables such as boehmite/carbon black powder ratio, reaction temperature and reaction time on the synthesis of AlN nanopowder was investigated.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.106-110
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• 2011

A high thermal conductive AlN composite coating is attractive in thermal management applications. In this study, AlN-YAG composite coatings were manufactured by atmospheric plasma spraying from two different powders: spray-dried and plasma-treated. The mixture of both AlN and YAG was first mechanically alloyed and then spray-dried to obtain an agglomerated powder. The spray-dried powder was primarily spherical in shape and composed of an agglomerate of primary particles. The decomposition of AlN was pronounced at elevated temperatures due to the porous nature of the spray-dried powder, and was completely eliminated in nitrogen environment. A highly spherical, dense AlN-YAG composite powder was synthesized by plasma alloying and spheroidization (PAS) in an inert gas environment. The AlN-YAG coatings consisted of irregular-shaped, crystalline AlN particles embedded in amorphous YAG phase, indicating solid deposition of AlN and liquid deposition of YAG. The PAS-processed powder produced a lower-porosity and higher-hardness AlN-YAG coating due to a greater degree of melting in the plasma jet, compared to that of the spray-dried powder. The amorphization of the YAG matrix was evidence of melting degree of feedstock powder in flight because a fully molten YAG droplet formed an amorphous phase during splat quenching.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.961-968
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• 1996

The aluminum nitride was synthesized by the self-propagating high-temperature synthesis(SHS). The synthe-sis was used aluminum powder mixed with AlN powder as reactant and the control factors affected to synthesis were considered compact density pressure of reaction gas AlN diluent content and aluminum powder size. The SHS reaction conducted with a reactant containing 50% AlN diluent under 0.8MPa nitrogen gas pressure yielded a complete conversion of aluminum powder to AlN powders. The size and purity of AlN produced were found to be comparable with that of AlN produced by the carbothermal nitrogen method.

• Journal of Powder Materials
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• v.15 no.6
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• pp.496-502
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• 2008

Aluminum nitride (AlN) powders were prepared by the chemical vapor synthesis (CVS) process in the $AlCl_{3}-NH_{3}-N_{2}$ system. Aluminum chloride ($AlCl_3$) as the starting material was gasified in the heating chamber of $300^{\circ}C$. Aluminum chloride gas transported to the furnace in $NH_{3}-N_{2}$ atmosphere at the gas flow rate of 200-400ml/min. For samples synthesized between 700 and $1200^{\circ}C$, the XRD peaks corresponding to AlN were comparatively sharp and also showed an improvement of crystallinity with increasing the reaction temperature. In additions, the average particle size of the AlN powders decreased from 250 to 40 nm, as the reaction temperature increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.2
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• pp.54-58
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• 2014

AlN (Aluminum Nitride) crystals were grown by a PVT (Physical Vapor Transport) method and were characterized to phases on the growth temperature. The crystals phase and morphology were analyzed using an optical stereo-microscope and the optimum temperature for the growing was determined. In this report, the characteristics of the AlN crystals grown at various temperatures were reported.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1362-1368
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• 1994

The hydrolysis of aluminum nitride was increased gradually with increasing reaction time from 1 hrs to 24 hrs and/or with decreasing the addition of the reaction water from 100 mι 100mι. Amorphous aluminum hydrate, formed in the beginning of the reaction, was transformed to bayerite and to pseudoboehmite at below and above 8$0^{\circ}C$, respectively. Aluminum oxynitride was synthesized by heating the partially hydrolyzed aluminum nitride at 1$700^{\circ}C$ for 4 hrs or at 175$0^{\circ}C$ for 30 min. AlON specimen with 1 wt% of Y2O3 that was molded and then sintered pressurelessly at 190$0^{\circ}C$, exhibits 98% of the theoretical density and a translucency of 68% in the visible ray zone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.346-347
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• 2007

Aluminum nitride (AlN) thin films were deposited on Polycrystalline (poly) 3C-SiC buffer layers using pulsed reactive magnetron sputtering. Characteristics of AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. As a result, highly (002) oriented AlN thin films with almost free residual stress were achieved using 3C-SiC buffer layers. Therefore, AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.201-207
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• 2014

High-purity aluminum nitride nanopowders were synthesized using an RF induction thermal plasma instrument. Ammonia and nitrogen gases were used as sheath gas to control the reactor atmosphere. Synthesized AlN nanopowders were characterized by XRD, SEM, TEM, EDS, BET, FTIR, and N-O analyses. It was possible to synthesize high-purity AlN nanoparticles through control of the ammonia gas flow rate. However, additional process parameters such as plasma power and reactor pressure had to be controlled for the production of high-purity AlN nanopowders using nitrogen gas.

• Journal of the Korean Society for Heat Treatment
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• v.10 no.2
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• pp.138-149
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• 1997

TiN and AlN are ceramic materials with extensive applications due to its excellent mechanical and chemical properties at elevated temperature. The purpose of this research is to develop the method for the synthesis of ternary nitride powder, titanium-aluminum-nitrogen system, which have an excellent property of both TiN and AlN. The ternary nitride such as $Ti_3AlN$, $Ti_2AlN$ and $Ti_3Al_2N_2$ can be synthesized by the interdiffusion nitriding method in Ar gas, however, the ternary nitride coexist with TiN, AlN, $Ti_3Al$ and ${\alpha}$-Ti. The ternary nitride are stable below $1400^{\circ}C$, but these are gradually decomposed into TiN, $Ti_3Al$ and AlN above $1400^{\circ}C$. The thermal oxidation characteristics of the Ti-Al-N compound synthesized by the interdiffusion nitriding method is superior to that of the TiN+AlN mixed powder, and the oxidation for both materials show the differential behaviors.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.