• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.266-270
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• 2011

We report on the formation mechanism of large Schottky barrier height (SBH) of nonalloyed Cr Schottky contacts on strained Al0.25Ga0.75N/GaN. Based on the current-voltage (I-V) and capacitance-voltage (C-V) data, the SBHs are determined to be 1.98 (${\pm}0.02$) and 2.07 (${\pm}0.02$) eV from the thermionic field emission and two-dimensional electron gas (2DEG) calculations, respectively. Possible formation mechanism of large SBH will be described in terms of the formation of Cr-O chemical bonding at the interface between Cr and AlGaN/GaN, low binding-energy shift to surface Fermi level, and the reduction of 2DEG electrons.

• Journal of the Korean Ceramic Society
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• v.27 no.8
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• pp.956-956
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• 1990

A nitrogenation of coal ash in the presence of carbon was carried out to examine the effects of reaction temperature, reaction time and carbon composition on the formation of AlN, SiC and Si3N4. Decreasing the particle size increased the formation of AlN and its maximum composition in the product was obtaiend under 1450∼1500℃, 2 hours of reaction time and about 30% of carbon addition(on the basis of sample weight). Compositions of SiC and Si3N4 were distributed to the opposite so that SiC showed a higher composition compared with Si3N4 at a lower temperature, a shorter reaction time and a greater carbon addition.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.465-470
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• 1991

AlN powder was synthesized by carbothermal reduction and nitridation of aluminum hydroxides precipitated in 5∼11 pH range from Al2(SO4)3$.$18H2O aqueous solution. Nitridation reactivity of hydroxide, which depends on precipitation pH, reaction temperature and time, was examined by XRD analysis at 1200∼1350$^{\circ}C$ and compared with that of commercial ${\alpha}$-Al2O3. Hydroxides obtained at higher pH could be more easily nitridated and, considering DTA/TG and BET results, the reason seems to be specific surface area difference of reactants depending on the content of decomposed structural water and the transition rate from transition-Al2O3 to ${\alpha}$-Al2O3.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.47-51
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• 2013

Current research trends of solar cells has focused on the high conversion efficiency and low-cost production technology. Passivation technology that can be easily adapted to mass production. Therefore, this study conducted experiments with aim of the following two methods for the fabrication of high-efficiency crystalline silicon solar cells. In the first task, an attempt is formation of local Al-BSF to a number of locally doped dots to increase the conversion efficiency of solar cells to reduce the loss of $V_{oc}$ overcome. The second major task, rear surface apply in $Al_2O_3/SiN_x$ stack layer, $Al_2O_3$ prominent negative fixed charge characteristics. As the result of task, Local Al-BSF and $Al_2O_3/SiN_x$ stack layer applied to the p-type single crystalline silicon solar cells, the average $V_{oc}$ of 644mV, $I_{sc}$ of 918mV and conversion efficiency of 18.70% were obtained.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.523-527
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• 2013

Ti-based coatings following laser ablation were studied to compare degradation behaviors by thermomechanical stress. TiN, TiCN, and TiAlN coatings were degraded by a Nd:YAG pulsed laser with an increase in the laser pulses. A decrease in the hardness was identified as the pulses increased, and the hardness levels were in the order of TiAlN > TiCN > TiN. The TiN showed cracks on the surface, and cracks with pores formed along the cracks were observed in the TiCN. The dominant degradation behavior of the TiAlN was surface pore formation. EDS results revealed that diffusion of substrate atoms to the coating surface occurred in the TiN. Delamination occurred in the TiN and TiCN, while the TiAlN which has higher thermal stability than the TiN and TiCN maintained adhesion to the substrate. It was considered that the decrease in the hardness of the Ti-based hard coatings is attributed to surface cracking and the diffusion of substrate atoms.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.732-736
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• 2013

AlN epilayers were grown on a c-plane sapphire substrate using hydride vapor phase epitaxy (HVPE). A series of AlN epilayers were grown at $1120^{\circ}C$ with V/III ratios 1.5, 2.5 and 3.5, and the influence of V/III ratio on their properties was investigated. As the V/III ratio was increased, the surface roughness (RMS roughness), Raman shift of $E_2$ high peaks and full-width at half-maximum (FWHM) of symmetrical (002) & asymmetrical (102) of the AlN epilayers increased. However, the intensities of the Raman $E_2$ high peaks were reduced. This indicates that the crystal quality of the grown AlN epilayers was degraded by activation of the parasitic reaction as the V/III ratio was increased. Smooth surface, stress free and high crystal quality AlN epilayers were obtained at the V/III ratio of 1.5. The crystal quality of AlNepilayers is worsened by the promotion of three-dimensional (3D) growth mode when the flow of $NH_3$ is high.

• Journal of Species Research
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• v.13 no.1
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• pp.32-40
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• 2024

Five new species of the genus Hyattella (Dictyoceratida: Spongiidae) were collected from Jejudo and Gageodo, Korea: Hy. gukheulensis n. sp., Hy. regularis n. sp., Hy. lenis n. sp., Hy. membrana n. sp., and Hy. asper n. sp. Hyattella gukheulensis n. sp. is similar to Hy. munseomensis Sim et al., 2015 in shape, but differs in skeletal structure. Hyattella regularis n. sp. is close to Hy. bakusi Sim et al., 2015 but differs in regular secondary fibres at the surface membrane. Hyattella lenis n. sp. is unique by having numerous windings at the surface. Hyattella membrana n. sp. is similar to Hy. bakusi Sim et al., 2015 in shape, but differs in surface and skeletal fibres. Hyattella asper n. sp. is close to Hy. lendenfeldi Sim and Lee, 2014 in skeletal fibres, but differs in thin secondary fibres. This new species has numerous dense cored primary fibres.

• Korean Journal of Metals and Materials
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• v.46 no.6
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• pp.390-401
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• 2008

The objective of this study is to evaluate various machining characteristics of AlN-hBN machinable ceramics in micro end-milling process for its further application. First, AlN based machinable ceramics with hBN contents in the range of 10 to 20vol% were prepared by hot-pressing. Material properties of the composites, such as relative density, Vickers hardness, flexural strength, Young's modulus and fracture toughness were measured and compared. Then, micro end-milling experiments were performed to fabricate micro channels using prepared system. During the process, cutting forces, vibrations and AE signals were measured and analyzed using applied sensor system. Machined micro channel shapes and surface roughness were measured using 3D non-contact type surface profiler. From the experimental results, it can be observed that the cutting forces, vibrations and AE signal amplitudes decreased with increasing hBN contents. Also, measured surface roughness and profiles were improved with increasing hBN contents. As a result of this study, optimum machining conditions can be determined to fabricate desired products with AlN-hBN machinable ceramics based on the experimental results of this research.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.97-105
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• 1998

Antioxidation mechanism of Al metal powders on $Al_2O_3-C$ refractory was investigated in temperature range from 800 to $1400^{\circ}C$. The addition of 5 wt% Al metal powders suppressed the oxidation of carbon in $Al_2O_3$-C sample. The carbons were distributed uniformly on the surface and the interface of the $Al_2O_3$-C-Al. Reaction products of $Al_4C_3$ and AIN were found with a composition of Al-C at temperatures between 800 and $1200^{\circ}C$ and transformed to $Al_2O_3$ above $1400^{\circ}C$. Cavity structures related to the to the formation of $Al_4C_3$ were observed for the AI-C after heating at $1000^{\circ}C$ ofr 1 hour. Thermodynamic mechanism was considered to discuss the formation $Al_4C_3$, AlN and their transformation to $Al_2O_3$, which leads to the effect of oxidation resistance.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.