• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.91-97
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• 2013

Self-heating effects during operation of high current AlGaN/GaN power transistors degrade the current-voltage characteristics. In particular, this problem becomes serious when a low thermal conductivity Si substrate is used. In this work, AlGaN/GaN-on-Si devices were fabricated with various channel widths and Si substrate thicknesses in which the structure dependent self-heating effects were investigated by temperature dependent measurements as well as thermal simulation. Accordingly, a device structure that can effectively dissipate the heat was proposed in order to achieve the maximum current in a multi-channel, large area device. Employing via-holes and common electrodes with a 100 ${\mu}m$ Si substrate thickness improved the current level by 75% reducing the channel temperature by 68%.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.97.2-97.2
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• 2018

This study formed a hard TiAlSiWN coating layer using Ti, Al, Si and W raw powders that were mechanically alloyed and refined. The TiAlSi and TiAlSiW coating targets were fabricated using a single PCAS process in a short time with the optimal sintering conditions. The coating targets were deposited on the WC substrate by forming coating layers using TiAlSiN and TiAlSiWN nitride nano-composite structures with an AIP process. The properties of the nitride nano-composite coating layers were compared according to the addition of W. The microstructure of the nitride nano-composite coating layer was analyzed, focusing on the distribution of the crystalline phases, amorphous phases ($Si_3N_4$), and growth orientation of the columnar crystal depending on the addition of W. The mechanical properties of the coating layers were exhibited a hardness of approximately $3,000kg/mm^2$ and adhesion of about 117.77N in the TiAlSiN. In particular, the TiAlSiWN showed excellent properties with a hardness of more than $4,300kg/mm^2$ and an adhesion of about 181.47N.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.587-593
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• 2007

Oil-based nanofluids were prepared by dispersing spherical and fiber shaped $Al_2O_3$ and AlN nanoparticles in transformer oil. Two hydrophobic surface modification processes using oleic acid (OA) and polyoxyethylene alkyl acid ester (PAAE) were compared in this study. The dispersion stability, viscosity and breakdown voltage of the nanofluids were also characterized. $(Al_2O_3+AlN)$ mixed nanofluid was prepared to take an advantage of the excellent thermal conductivity of AlN and a good convective heat transfer property of fiber shaped $Al_2O_3$. For $(Al_2O_3+AlN)$ particles with 1 % volume fraction in oil, the enhancement of thermal conductivity and convective heat transfer coefficient was nearly 11 % and 30 %, respectively, compared to pure transformer oil. The nanofluid, containing $Al_2O_3+AlN$, successfully lowered the temperature of the heating element and oil itself during a natural convection test using a prototype transformer.

• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.410-418
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• 1992

Si3N4, AlN and Y2O3 powder mixtures of the Y0.1(Si, Al)12(N, O)16 composition were hot-pressed at 1900℃ for 0 to 60 min under 30 MPa in order to fabricate the partially-stabilized α-Sialon ceramics (X=0.1). Room and high temperature flexural strengths of the specimens were compared with those of Si3N4-5 wt%Y2O3, Si3N4-5 wt%Y2O3-2 wt%Al2O3, and β-Sialon (Z=0.5) ceramics. The flexural strength of the α-Sialon ceramics which was hot-pressed for 15 min showed the highest value of 820 MPa at 1400℃ that is relatively higher temperature. It is guessed that a little amount of glassy phase existed in grain boundary because Y2O3 and AlN components were incoperated in Si3N4 grains, or transient liquid phase sintering, and microstructure with the smaller grain size and the interlocked grains of α'-and β-Si3N4 was obtained by the hot-pressing at high temperature of 1900℃ for the short time (15 min).

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.163-167
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• 2004

TiAl(La)N thin films were oxidized in vacuum of about 7 Pa to reduce the oxidation of WC-Co as a substrate. The oxidation rate constants of the thin films were quantified by an assumption of parabolic oxidation. Increasing AI content significantly decreased the parabolic oxidation rate constant. A simultaneous addition of AI and La was more effective to reduce the oxidation rate. The parabolic oxidation rate constant of $Ti_{0.66}$ $Al_{0.32}$ $La_{ 0.02}$N thin film at 1273 K showed about ten times lower than that of TiN. The addition of a small amount of La with Al induced the preferential formation of dense $\alpha$ $-Al_2$$O_3$ film in oxide film, leading to the abrupt reduction of oxidation rate.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.107-107
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• 2016

TiCrAlSiN films were developed in order to improve the high-temperature oxidation resistance, corrosion resistance, and mechanical properties of conventional TiN films that are widely used as hard films to protect and increase the lifetime and performance of cutting tools or die molds. In this study, a nano-multilayered TiAlCrSiN film was deposited by cathodic arc plasma deposition. It displayed relatively good oxidation resistance at $700-900^{\circ}C$, owing to the formation protective oxides of $Al_2O_3$, $Cr_2O_3$, and $SiO_2$, and semiprotective $TiO_2$. At $1000^{\circ}C$, the increased temperature led to the formation of the imperfect oxide scale that consisted primarily of the outer ($TiO_2$,$Al_2O_3$)-mixed scale and inner ($TiO_2$, $Al_2O_3$, $Cr_2O_3$)-mixed scale.

• Korean Journal of Metals and Materials
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• v.50 no.3
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• pp.248-255
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• 2012

AlN thin films containing various amounts of Co, AlN-Co, and Al-Co alloy particles were prepared using a two-facing-target type dc reactive sputtering (TFTS) system. The as-deposited films exhibited the variable nature expected from an AlN-rich phase, and an amorphous-like phase, depending on the Co content in the films. Specific favorable microstructures were prepared by optimizing annealing conditions. Those microstructures and their magnetic properties and resistivity were investigated. As-deposited films showed very small saturation magnetization and an amorphous-like structure. However, when annealed, the as-deposited amorphous-like phase decomposes into phases of AlN, Co and Al-Co. These annealing induced changes in the microstructure improve the magnetization and resistivity of the films. Further improvement of soft magnetic properties could lead to the material being used for high density magnetic recording head material.

• Transactions of Materials Processing
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• v.27 no.1
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• pp.48-53
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• 2018

Aluminum nitride (AlN) is used by the semiconductor industry that has requirements for high thermal conductivity. The theoretical thermal conductivity of single crystal AlN is 320W/mK. Whereas, the values measured for polycrystalline AlN ceramics range from 20 W/mK to 280 W/mK. The variability is strongly dependent upon the purity of the starting materials and non-uniform dispersibility of the sintering additive. The conventional AlN sintering additive used yttria ($Y_2O_3$), but the dispersibility of the powder in the mixing process was important. In this study, we investigated the mechanical and thermal conductivity of yttrium nitrate ($Y(NO_3)_3{\cdot}6H_2O$), as a sintering additive in order to improve the dispersibility of $Y_2O_3$. The sintering additives content was in the range of 2 to 4.5wt.%. The density of AlN gradually increased with increasing contents of sintering additive and the flexural strength gradually increased as well. The flexural strength of the sintered body containing 4 wt% of $Y_2O_3$ and $Y(NO_3)_3{\cdot}6H_2O$ was 334.1 MPa and 378.2 MPa, respectively. The thermal conductivities were 189.7W/mK and 209.4W/mK, respectively. In the case of hardness, there was only a slight difference and the average value was about 10 GPa. Therefore, densification, density and strength values were found to be proportional to its content. It was confirmed that AlN using $Y(NO_3)_3{\cdot}6H_2O$ displayed relatively higher thermal conductivity and mechanical properties than the $Y_2O_3$.

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.83-91
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• 1996

Monolithic AlN and AlN-W composites were fabricated by pressure-less sintering at 190$0^{\circ}C$ under nitrogen atmosphere and the influences of tungsten phase on the microstructure and mechanical properties were investi-gated. In the fabrication of sintered specimen no additive was used. And monolithic AlN showed substantial grain growth and low relative density. AlN-W composites were fully densified and grain growths of matrix were inhibited. The densification behavior of composites were inferred to be achieved through the liquid phase sintering process such as particle-rearrangement and solutino-reprecipitation. Also the oxid phases which is expected to form liquid phases duringsintering process were detected by XRD analysis. As the tungsten volume content increases fracture strength was decreased and fracture toughness was increased. It was suppo-sed that the strength decrease of composites with tungsten content was due to existence of interface phases. The subcritical crack growth behavior was observed from the stress-strain curve of composites. The effect of the secondary phase and interface phases on toughness in crease were studied through observation of crack propagation path and the influence of residual stress on crack propagation was investigated by X-ray residual stress measurement. In the result of residual stress measurement the compressive stress of matrix in composi-test was increased with tungsten volume content and the compressive stress distribution of matrix must have contributed to the inhibition of crack propagation.

• Journal of Powder Materials
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• v.15 no.6
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• pp.496-502
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• 2008

Aluminum nitride (AlN) powders were prepared by the chemical vapor synthesis (CVS) process in the $AlCl_{3}-NH_{3}-N_{2}$ system. Aluminum chloride ($AlCl_3$) as the starting material was gasified in the heating chamber of $300^{\circ}C$. Aluminum chloride gas transported to the furnace in $NH_{3}-N_{2}$ atmosphere at the gas flow rate of 200-400ml/min. For samples synthesized between 700 and $1200^{\circ}C$, the XRD peaks corresponding to AlN were comparatively sharp and also showed an improvement of crystallinity with increasing the reaction temperature. In additions, the average particle size of the AlN powders decreased from 250 to 40 nm, as the reaction temperature increased.