• The Journal of the Petrological Society of Korea
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• v.12 no.3
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• pp.119-134
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• 2003

Yuksipryeong two-mica granite presents strongly peraluminous characteristics in both mineralogy and geochemistry. It has high aluminum saturation index with 1.15∼l.20 and high corundum with 2.20∼2.98 wt% CIPW norm. As the color index is <16% and FeO$\^$T/+ MgO + TiO$_2$is average 1.9 wt％, it corresponds to leucogranite. Yuksipryeong two-mica leucogranite shows negative linear trend for TiO$_2$, Al$_2$O$_3$, FeO, Fe$_2$O$_3$, MgO, CaO, K$_2$O, P$_2$O$\_$5/, Rb, Ba, and Sr as SiO$_2$increases, and the positive relation of Zr and Th, which result from feldspar, biotite, apatite and zircon fractionation. Pegmatitic dike has higher SiO$_2$and P$_2$O$\_$5/, but lower another major elements. Yuksipryeong two-mica leucogranite has lower Rb, but higher Ba and Sr than Manaslu, Hercynian two-mica leucogranites, and S-type granites in Lachlan Fold Belt. Pegmatitic dike has higher Rb and Nb but lower Ba, Sr, Zr, Th, and Pb contents than Yuksipryeong two-mica leucogranite, resulting in removing or mobilizing for some trace elements from the granitic melt. Yuksipryeong two-mica leucogranite has total REEs with 95.7∼l23.3 ppm, and chondrite-normalized REE pattern is very steep ((La/Yb)$\_$N/ = 6.9∼24.8), light REEs (LREEs)-enriched End heavy REEs (HREEs)- depleted pattern with low to moderate Eu anomalies (Eu/Eu＊= 0.7∼0.9). While pegmatitic dike has low total REEs with 7.0 ppm, and chondrite-normalized REE pattern is flat-pattern ((La/Yb)$\_$N/ = 2.1) with strong negative Eu anomalies (Eu/Eu＊= 0.2). The melt compositions having formed two-mica leucogranites depend on not only the source rock but also the amounts of the residual remaining after melting of source rocks. The CaO/Na$_2$O and Rb/Sr-Rb/Ba ratios depend mainly on the composition of source rocks in the strongly peraluminous granite, that is, plagioclase/clay ratio of the source rocks. Yuksipryeong two-mica leucogranite has higher CaO/Na$_2$O and lower Rb/Sr-Rb/Ba ratios than Manaslu and Hercynian two-mica leucogranites (Millevaches and Gueret) derived from clay-rich, plagioclase-poor (polite), which suggest that the probable source rocks for Yuksipryeong two-mica leucogranite is clay-poor, plagioclase-rich quartzofeldspathic rocks. As the concentrations of Al$_2$O$_3$remain nearly constant but those of TiO$_2$increases as increasing temperature in the strong peraluminous melt, the Al$_2$O$_3$/TiO$_2$ratio may reflect relative temperature at which the melts have formed. Comparing the polite-derived Manaslu and Hercynian two- mica leucogranites, Manaslu two-mica leucogranite has higher Al$_2$O$_3$/TiO$_2$ratio than latter, and its melt have formed at relatively lower temperature ($\leq$ 875$^{\circ}C$) than Hercynian two-mica leucogranites. Likewise, comparing the quartzofeldspathic rock-derived granites, Yuksipryeong two-mica granite has higher Al$_2$O$_3$/TiO$_2$, ratio than S-type granites in Lachlan Fold Belt (>875$^{\circ}C$). The melt formed Yuksipryeong two-mica leucogranite are considered to have been formed at temperature at below the maximum 875$^{\circ}C$C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.20-20
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• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.

• Proceedings of the Membrane Society of Korea Conference
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• 1994.04a
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• pp.57-57
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• 1994

졸-겔 침지코팅 (dipcoating) 또는 가압 졸-겔 코팅 (pressurized coating) 법으로 제조한 $\gamma-Al_2O_3, SiO_2, TiO_2$ 및 aluminosilicate 복합막에 대하여 $CO_2$, He, $N_2$, 및 $O_2$ 기체 투과율과 $CO_2$ 분리계수를 측정하였다. 이들 막을 통한 모든 기체의 이동은 Knudsen 유동이 지배적이었으며 $CO_2/N_2$의 분리계수는 0.9 ~ 1.1 정도로 Knudsen 분리계수 ($CO_2/N_2$의 경우 0.8)보다 약간 높은 값을 보여주었다. $CO_2$ 분리계수를 향상시키기 위하여 silane coupling 및 산화물 도핑법에 의한 복합막의 표면개질을 시도하였으며 분리막의 재질 및 표면개질 조건에 따른 $CO_2/N_2$ 분리계수 변화를 측정 비교하였다. Silane coupling에 의한 표면개질이 $CO_2$의 표면 친화성 (affinity)에 의한 표면확산속도를 증가시키기 때문에 $CO_2$ 분리에 있어서 산화물 도핑에 의한 표면개질보다 더욱 효과적이었다.

• Journal of the Korean Ceramic Society
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• v.24 no.6
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• pp.553-560
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• 1987

Amorphous ferrites with composition B2O3-mBaO-nFe2O3 were prepared by an ultra rapidquenching technique. X-ray patterns and SEM reveal the products to be amrophous at room temperature. BaFe12O19 fine particles extracted from amorphous Ba-ferrites which additived Al2O3, SiO2, TiO2 and CoO have narrow size distribution, average 0.2$\mu\textrm{m}$, and coercive force, average 1400 Oe, increased with increasing TiO2 amounts. The obtained BeFe12O19 fine particles would be appreciated as perpendicular magnetic recording media.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Bulletin of the Korean Chemical Society
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• v.16 no.11
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• pp.1109-1112
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• 1995

Bis(silyl)alkylbenzenes such as bis(1-sila-sec-butyl)benzene (1) and 2-phenyl-1,3-disilapropane (2) were prepared in high yields by reduction of the corresponding chlorosilanes with LiAlH4. The dehydropolymerization of 1 and 2 was carried out with group 4 metallocene complexes generated in situ from Cp2MCl2/Red-Al and Cp2MCl2/n-BuLi (M=Ti, Hf), producing two phases of polymers. The TGA residue yields of the insoluble polymers were in the range of 64-74%. The molecular weights of the soluble polymers produced ranged from 700 to 5000 (Mw vs polystyrene) and from 500 to 900 (Mn vs polystyrene). The dehydropolymerization of 1 and 2 seemed to initially produce a low-molecular-weight polymer, which then underwent an extensive cross-linking reaction of backbone Si-H bonds, leading to an insoluble polymer.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.26-30
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• 2003

안테나 내장형 유도결합 플라즈마를 마그네트론 스퍼터링 장치에 추가하고 플라즈마의 생성 조건을 제어함으로써 고품질의 박막을 증착할 수 있는 장치의 개발 연구를 수행하였다. 정확한 장치의 성능을 평가하고 앞으로의 개선점을 찾기 위하여 Langmuir probe, OES, RF impedance probe, QMS 등의 플라즈마 진단 도구들을 사용하여 기본 동작 특성 및 공정중 플라즈마의 전자 온도, 밀도, 방출 파장 분석을 통한 입자 상태 분석, 부하 임피던스와 시스템 임피던스 분석을 통한 파워 전달 특성을 평가하고 이에 따라서 장치의 구성 및 동작 조건을 변경 개선하였다. 실험 대상 박막계는 기본 물성 측정을 위한 Al, Ag, TiN, MgO, Si, $SiO_2$, 등이며 타겟의 크기는 2인치 직경의 원형, 12인치 원형, 5인치 * 25인치 사각형 3가지 이다.

• Economic and Environmental Geology
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• v.43 no.3
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• pp.269-278
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• 2010

We investigated characteristics of the coloring material of Dancheong pigments and hope that this study contributes the revival of traditional Dancheong pigments color. For this purpose, we collected Dancheong fragment samples that fell off naturally from old wooden buildings in Gwangju and Jeonnam and analyzed the natural coloring material by XRD and EDS-SEM analysis method. In white pigments of Dancheong fragments, it is confirmed that gypsum$(CaSO_{4}{\cdot}2H_{2}O)$, quartz$(SiO_{2})$, white lead$(PbCO_{3})$ and calcite$(CaCO_{3})$ which have been used for white pigments since ancient times and $TiO_{2}$ which is common used in modern times. In red pigments of Dancheong fragments, it is confirmed that hematite$(Fe_{2}O_{3})$ and red lead$(Pb_{3}O_{4})$, which have been used for red pigments since ancient times and C.I. pigment orange $13(C_{32}H_{24}C_{12}N_{8}O_{2})$ but there is no cinnabar(HgS) which has been used since B.C. 3000 in China. In yellow pigments of Dancheong fragments, it is confirmed that crocoite$(PbCrO_{4})$ and massicot(PbO). In blue pigments of Dancheong fragments, it is confirmed that sodalite$(Na_{4}BeAlSi_{4}O_{12}Cl)$ and nosean $(Na_{8}Al_{6}Si_{6}O_{24}SO_{4})$ as coloring material of blue pigment and C.I. pigments blue $29(Na_{7}Al_{6}Si_{6}O_{24}S_{3})$ which is used in modern times. In green pigments of Dancheong fragments, it is confirmed that calumetite$(Cu(OHCI)_{2}{\cdot}2H_{2}O)$, escolaite(Cr2O3), dichromium trioxide$(Cr_{2}O_{3})$, emerald green$(C_{2}H_{3}As_{3}Cu_{2}O_{8})$, and C.I. pigments green$(C_{32}H_{16}-XCl_{x}Cu_{8})$ which is used in modern time. In black pigments of Dancheong fragments, Chiness ink(carbon black) is confirmed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.56-56
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• 1999

For advanced TFT-LCD manufacturing processes, dry etching of thin-film layers(a-Si, $SiN_x$, SID & gate electrodes, ITO etc.) is increasingly preferred instead of conventional wet etching processes. To dry etch Al gate electrode which is advantageous for reducing propagation delay time of scan signals, high etch rate, slope angle control, and etch uniformity are required. For the Al gate electrode, some metals such as Ti and Nd are added in Al to prevent hillocks during post-annealing processes in addition to gaining low-resistivity($<10u{\Omega}{\cdot}cm$), high performance to heat tolerance and corrosion tolerance of Al thin films. In the case of AI-Nd alloy films, however, low etch rate and poor selectivity over photoresist are remained as a problem. In this study, to enhance the etch rates together with etch uniformity of AI-Nd alloys, magnetized inductively coupled plasma(MICP) have been used instead of conventional ICP and the effects of various magnets and processes conditions have been studied. MICP was consisted of fourteen pairs of permanent magnets arranged along the inside of chamber wall and also a Helmholtz type axial electromagnets was located outside the chamber. Gas combinations of $Cl_2,{\;}BCl_3$, and HBr were used with pressures between 5mTorr and 30mTorr, rf-bias voltages from -50Vto -200V, and inductive powers from 400W to 800W. In the case of $Cl_2/BCl_3$ plasma chemistry, the etch rate of AI-Nd films and etch selectivity over photoresist increased with $BCl_3$ rich etch chemistries for both with and without the magnets. The highest etch rate of $1,000{\AA}/min$, however, could be obtained with the magnets(both the multi-dipole magnets and the electromagnets). Under an optimized electromagnetic strength, etch uniformity of less than 5% also could be obtained under the above conditions.