• Applied Chemistry for Engineering
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• v.5 no.6
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• pp.1044-1055
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• 1994

The preparation of ZrC/SiC mixed powders from $ZrSiO_4/C$ and $ZrSiO_4/Al/C$ systems was attempted in the temperature range below $1600^{\circ}C$ under Ar or $Ar/H_2$ gas flow(100-500ml/min). The formation mechanism and kinetics of ZrC/SiC were suggested and the resultant powders were characterized. In $ZrSiO_4/C$ system, ZrC and SiC were formed by competitive reaction of $ZrO_2(s)$ and SiO(g) with carbon at temperature higher than $1400^{\circ}C$. The apparent activation energy for the formation of ZrC was approximately 18.5kcal/mol($1400-1600^{\circ}C$). In $ZrSiO_4/Al/C$ system, ZrC was formed by reaction of ZrO(g) with Al(l, g) and carbon at temperature higher than $1200^{\circ}C$, and SiC was formed by reduction-carbonization of SiO(g) with Al(l, g) and carbon at temperature higher than $1300^{\circ}C$. The products obtained at $1600^{\circ}C$ for 5h consisted of ZrC with lattice constant of $4.679{\AA}$ and crystallite size of $640{\AA}$, and SiC with lattice constant of $4.135{\AA}$ and crystallize size of $500{\AA}$. And also, the mean particle size was about $21.8{\mu}m$.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.483-490
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• 1997

Al2O3/metal composites were fabricated by oxidation and reaction of molten Al-alloy into two types of commercial Al2O3-SiO2 fibrous insulation board. The growth rate, composition and microstructure of these materials were described. An AlZnMg(7075) alloy was selected as a parent alloy. Mixed polycrystalline fiber and glass phase fiber were used as a filler. The growth surface of an alloy was covered with and without SiO2. SiO2 powder was employed as a surface dopant to aid initial oxidation of Al-alloy. Al-alloy, SiO2, fiber block and growth inhibitor CaSiO3 were packed sequentially in a alumina crucible and oxidized in air at temperature range 90$0^{\circ}C$ to 120$0^{\circ}C$. The growth rate of composite layer was calculated by measuring the mass increasement(g) per unit surface($\textrm{cm}^2$). XRD and optical microscope were used to investigate the composition and phase of composites. The composite grown at 120$0^{\circ}C$ and with SiO2 dopant showed rapid growth rate. The growth behavior differed a little depending on the types of fiber used. The composites consist of $\alpha$-Al2O3, Al, Si and pore. The composite grown at 100$0^{\circ}C$ exhibited better microstructure compared to that grown at 120$0^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.625-625
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• 1991

The specimens for the corrosion test were made by hot-pressing of SiC power with 2 wt% Nl2O3 and 10wt% Al2O3 additions at 2000℃ and 2050℃. The specimens were corroded in 37 mole% NaCl and 63 mole% Na2SO4 salt mixture at 1000℃ up to 60 min. SiO2 layer was formed on SiC and then this oxide layer was dissolved by Na2O ion in the salt mixture. The rate of corrosion of the specimen containing 10 wt% Al2O3 was slower than that of the specimen containing 2 wt% Al2O3. This is due to the presence of continuous grain boundary phase in the specimen containing 10 wt% Al2O3. The oxidation of SiC produced gas bubbles at the SiC-SiO2 interface. The rate of corrosion follows a linear rate law up to 50 min. and then was accelerated. This acceleration is due to the disruption oxide layer by the gas evolution at SiC-SiO2 interface. Pitting corrosion has found at open pores and grain boundaries.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.610-614
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• 2016

Tyranno SA (SiC-polycrystalline fiber, Ube Industries Ltd.) shows excellent heat-resistance up to $2000^{\circ}C$ with relatively high mechanical strength. This fiber is produced by the conversion process from a raw material (amorphous Si-Al-C-O fiber) into SiC-polycrystalline fiber at very high temperatures over $1500^{\circ}C$ in argon. In this conversion process, the degradation reaction of the amorphous Si-Al-C-O fiber accompanied by a release of CO gas for obtaining a stoichiometric composition and the subsequent sintering of the degraded fiber proceed. Furthermore, vaporization of gaseous SiO, phase transformation and active diffusion of the components of the Si-Al-C-O fiber competitively occur. Of these changes, vaporization of the gaseous SiO during the conversion process results in an abnormal SiC-grain growth and also leads to the non-stoichiometric composition. However, using a modified Si-Al-C-O fiber with an oxygen-rich surface, vaporization of the gaseous SiO was effectively prevented, and then consequently a nearly stoichiometric SiC composition could be obtained.

• Journal of the Korean Ceramic Society
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• v.43 no.10 s.293
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• pp.660-665
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• 2006

The mechanical properties of $Al_2O_3$-SiC composites manufactured with adding various amount and size of SiC particles have been measured and analyzed. Generally, the elastic modulus of the composites shows about 50% less than that of PL-8 (45 wt% $Al_2O_3$-51 wt% $SiO_2$-4 wt% other oxides), but the flexural strength is similar with each other. The impact resistance property of $Al_2O_3$-SiC composite against high velocity copper jet was lower than that of PL-8 when SiC particles of approximately 3 $\mu$m diameter was added to. It is caused probably due to the micro-pores made by oxidation of SiC particles. However, in the case of the less-weighted $Al_2O_3$-SiC composite adding to 10 wt% SiC with average diameter of 10 $\mu$m and sintering at 1200$^{\circ}C$, the impact resistance property was improved up to 37 percent compared with that of PL-8.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1003-1008
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• 2010

In this study, the effect of the reinforcement on the wear behaviour and mechanical properties of hypereutectic Al-Si alloys was investigated. The Gas atomized hypereutectic Al-20Si alloy powders were mixed with 1, 3, and 5 wt.% AlN and TiC ceramic particles and consolidated by hotpress. The Al-20Si powder has both finely dispersed primary Si phases and eutectic structures. The Al-20Si-AlN, TiC composites showed that the reinforcements were distributed along the boundary of the Al-20Si alloy. The UTS increased with increasing the AlN, TiC contents. At a lower load, with an increasing weight fraction of reinforcements, the wear rate decreased in both composites and the wear mechanism was adhesive wear. At a higher load, the shape of the debris changes the mechanism of the AlN composites to abrasive-adhesion wear and this resulted in an increase of the wear rate.

• Journal of Korea Foundry Society
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• v.15 no.4
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• pp.360-367
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• 1995

Effects of metal coating treatment on SiC particle on wetting behavior and interfacial strength were studied. Experimental variables are included types of coated metallic films such as Cu and Ni-P, and temperatures of heat-treatment under vacuum. The experimental results concerning wetting phenomena of liquid Al on SiC, showed that coating treatment of metallic film on SiC particles remarkably improves the wetting behavior of liquid Al on SiC, especially in the case of Ni-P coating. The interfacial strength of Al/SiC composites made of coated SiC plate was higher than that of the composite with non-coated SiC plate although the coating treatment was not perfect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1056-1061
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• 2007

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. The surface morphology was dramatically changed with varying the SiC/Al ratio. When the SiC/Al ratio of 90/1 was used, the step bunching was not observed in this magnification and the ratio of SiC/Al is an optimized range to grow of p-type SiC epitaxial layer. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. 4H-SiC MESFETs haying a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized. It was confirmed that the increase of the negative voltage applied on the gate reduced the drain current, showing normal operation of FET device.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1308-1314
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• 1995

Changes in phase and microstructure were investigated in the SiC-AlN ceramics prepared by pressureless sintering using yttrium aluminum garnet (YAG) as a sintering aid at 200$0^{\circ}C$ and 210$0^{\circ}C$. The SiC/AlN ratio made a remarkable difference in densification, phase relations and the morphology of grains. In the AlN-rich composition, major phase was 2H and microstructure was composed of the densified equiaxed grains irrespective of the sintering temperatures. While those sintered at 200$0^{\circ}C$ were porous with major phase being 3C, the rod-like and the equiaxed grains were coexisted when sintered at 210$0^{\circ}C$ in the SiC-rich composition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.346-347
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• 2007

Aluminum nitride (AlN) thin films were deposited on Polycrystalline (poly) 3C-SiC buffer layers using pulsed reactive magnetron sputtering. Characteristics of AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. As a result, highly (002) oriented AlN thin films with almost free residual stress were achieved using 3C-SiC buffer layers. Therefore, AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.