• Journal of Ocean Engineering and Technology
• /
• v.22 no.4
• /
• pp.59-64
• /
• 2008

The mechanical properties of liquid phase sintered (LPS) SiC materials, with the addition of oxide powder, were investigated, in conjunction with a detailed analysis of their microstructures. LPS-SiC materials were fabricated at a temperature of 1820 $^{\circ}C$ under an argon atmosphere, using three different starting sizes of SiC particles. The sintering additive for the fabrication of the LPS-SiC materials was an $Al_2O_3-Y_2O_3$ mixture with a constant composition ratio ($Al_2O_3/Y_2O_3$: 1.5). The particle sizes of the commercial SiC powderswere 30 nm, 0.3 $\mu$m, and 3.0 $\mu$m. The flexural strength of the LPS-SiC materials was also examined at elevated temperatures. A decrease in the starting size of the SiC particles led to an increase in the flexural strength of the LPS-SiC materials, accompanying a highly dense morphology with the creation of a secondary phase. Such a secondary phase was identified as $Y_3Al_2(AlO_4)2$. The flexural strength of the LPS-SiC materials greatly decreased with an increase in the test temperature, due to the creation of a large amount of pores.

• Journal of Power System Engineering
• /
• v.17 no.1
• /
• pp.110-115
• /
• 2013

The electrochemical performance and microstructure of Al-Si, Al-Si/C was investigated as anode for lithium ion battery. The Al-Si nano composite with 5 : 1 at% ratio was prepared by arc-discharge nano powder process. However, some of problem is occurred, when Al nano composite was synthesized by this manufacturing. The oxidation film is generated around Al-Si particles for passivating processing in the manufacture. The oxidation film interrupts electrical chemistry reaction during lithium ion insertion/extraction for charge and discharge. Because of the existence the oxidation film, Al-Si first cycle capacity is very lower than other examples. Therefore, carbon synthsized by glucose ($C_6H_{12}O_6$) was conducted to remove the oxidation film covered on the composite. The results showed that the first discharge cycle capacity of Al-Si/C is improved to 113mAh/g comparing with Al-Si (18.6mAh/g). Furthermore, XRD data and TEM images indicate that $Al_4C_3$ crystalline exist in Al-Si/C composite. In addition the Si-Al anode material, in which silicon is more contained was tested by same method as above, it was investigated to check the anode capacity and morphology properties in accordance with changing content of silicon, Si-Al anode has much higher initial discharge capacity(about 500mAh/g) than anode materials based on Aluminum as well as the morphology properties is also very different with the anode based Aluminum.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.19 no.7
• /
• pp.1619-1629
• /
• 1995

The Al/Al$_{2}$O$_{3}$ SiC and Al/Al$_{2}$O$_{3}$/C hybrid metal matrix composites (MMCs) were fabricated by squeeze infiltration method. Uniform distribution of reinforcements were found in the microstructure of metal matrix composites. Mechanical tests were carried out under various test conditions to clearly identify mechanical behavior of MMCs, and the wear mechanism of Al/Al$_{2}$O$_{3}$/(SiC or C) hybrid metal matrix composites were investigated. The tensile strength and hardness of hybrid composites was resulted in increasing compared with those of the unreinforced matrix alloy. Wear resistance was strongly dependent upon kinds of fiber, volume fraction and sliding speed. The wear resistance of metal matrix composites was remarkably improved by the addition of reinforcements. Especially, the wear resistance of the hybrid composites of carbon fibers was more effective than in the composites reinforced with alumina and SiC whiskers of reinforcements. This was due to the effect of carbon fiber on the solid lubrication. Wear mechanisms of hybrid composites were suggested from wear surface analyses. The major wear mechanism of hybrid composites was the abrasive wear at low to intermediate sliding speed, and the melting wear at intermediate to high sliding speed.

• Composites Research
• /
• v.16 no.1
• /
• pp.1-12
• /
• 2003

This study developed SiC$_{p}$/A1$_2$O$_3$$_{f}$/Al composites for electronic packaging to which reinforcements were added with the volume fractions of 49%, 56% and 63% by the squeeze casting method. 0.8 wt. % of the inorganic binder as well as the A1$_2$O$_3$ fiber and SiC Particles with the volume fraction of 1:10 were added to the composites, which were produced in the newly designed mold. For the produced SiC/Al composites, the CTEs (coefficients of thermal expansion) were measured from 30 to 300 and compared with the FEM numerical simulation to analyze the temperature dependent properties. The experiment showed the CTEs of SiC$_{p}$/A1$_2$O$_3$$_{f}$/Al composites that were intermediate values of those of Rule of Mixture and Turner's Model. The CTEs were close to Turner's Model in the room temperature and approached the Rule of Mixture as the temperature increases. These properties analyzed from the difference of the average stress acting between the matrix and the reinforcements proposed in this study.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.11
• /
• pp.505-513
• /
• 2006

The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• Journal of the Korean Ceramic Society
• /
• v.35 no.7
• /
• pp.721-725
• /
• 1998

In this study solid-phase sintered silicon caribide samples composed of SiC powder having boron and car-bon black as additives were prepared by pressureless sintering at $1950^{\circ}C$. The bending strength the frac-ture toughness and the specific werar rate of the samples were examined and the micro structures of the broken and the worn surface were observed by SEM to understand the relationship between the tri-bological charcteristics and the micro structure. Additionally the relationship between the micro struc-tures and the tribological characteristics of the samples for the frictional opponents SiC and $Al_{2}O_{3}$ pins were investigated Conclusions are as follows ; 1. The specific were rate of the samples for the SiC pin was larger than that for the $Al_{2}O_{3}$ pin. HOwever the specific wear rate for the $Al_{2}O_{3}$ pin was increased about 6,45 times as that for the SiC pin under the load increasing. 2. The specific wear rate of the SiC pin was larger than that of the $Al_{2}O_{3}$ pin. owever the specific wear rate of the $Al_{2}O_{3}$ pin was increased about 4 times as that of the SiC pin under the load increasing 3. The micro stucture of the worn surface showed a flat face without cracks in the case that the frictional opponents has the low friction coefficient but in the case of without cracks in the case that the frictional opponents has the low friction coefficient but in the case of the high friction coefficient the micro structure of the worn surface showed an uneven face having spread-ed cracks. 4. The tribological characteristics of thesolid-phase sintered SiC samples was similar to that of li-quid-phase sintered ones when the pin having the high friction coefficient was used.

• Journal of IKEEE
• /
• v.24 no.2
• /
• pp.604-609
• /
• 2020

We investigated the influence of rapid thermal annealing on aluminum nitride (AlN) thin film Schottky barrier diodes (SBDs) manufactured structures deposited on a 4H-silicon carbide (SiC) wafer using radio frequency sputtering. The Ni/AlN/4H-SiC devices annealed at 400℃ exhibited Schottky barrier diode (SBDs) properties with an on/off current ratio that was approximately 10 times higher than that of the as-deposited device structures and the devices annealed at 600℃ as measured at room temperature. Auger electron spectroscopy (AES) measurements revealed that atomic oxygen concentrations in the annealed AlN devices at 400℃, is ascribed to the improvement in on/off ratio and the reduction of on-resistance. Additionally, we investigated the electrical characteristics of the AlN/SiC SBD structures depending on the frequency variation of sound waves.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2001.11a
• /
• pp.133-133
• /
• 2001

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.05a
• /
• pp.131-132
• /
• 2015

$Ti_{0.26}Al_{0.16}Si_{0.01}N_{0.57}$ (at%) coatings were synthesized on stainless steel 304 by using arc ion plating systems (AIPS). Targets employed for the deposition were Ti, AlSi(67:33at%) and AlSi(82:18at%). The thickness of TiAlSiN coatings is $4{\mu}m$. The oxidation characteristics of the deposited coatings were studied by thermogravimetric analysis (TGA) in air between 800 and $900^{\circ}C$ for 75 hr. The oxide scale formed on the TiAlSiN coatings consisted of $rutile-TiO_2$ layer and ${\alpha}-Al_2O_3$. At $800^{\circ}C$, the coatings oxidized relatively slowly, and the scales were thin and adherent. When oxidized above $900^{\circ}C$, $TiO_2$ grew fast over the mixed oxide layer, and the oxide scale formed on TiAlSiN coatings was prone to spallation. Microstructural changes of the TiAlSiN coatings that occurred during high temperature oxidation were investigated by EPMA, XRD, SEM and TEM.

• Journal of the Korean Ceramic Society
• /
• v.28 no.9
• /
• pp.667-674
• /
• 1991

In this study, Kaolin was carbonized at 1300~175$0^{\circ}C$ and its constituent mineral change was investigated. Carbonized kaolin at 1$650^{\circ}C$ was mixed with metallic silicon, formed and nitrified at 135$0^{\circ}C$ in N2-NH3 atmosphere. Properties of this product such as porosity, bulk density, MOR, nitrization rate and oxidation resistence were measured, and its mineralogical changes were investigated by XRD. The results were as follows; 1) $\beta$-SiC was initially synthesized at 150$0^{\circ}C$, and its amount was continuously increased with reaction temperature to 1$700^{\circ}C$. 2) At 1$600^{\circ}C$, mullite was rapidly decomposed and the amounts of $\beta$-SiC and $\alpha$-Al2O3 were increased simultaneously. 3) By adding alkali to kaolin, the decomposition temperature of mullite was dropped approximately 10$0^{\circ}C$, but the amount of $\alpha$-SiC was increased. 4) The highest values of their nitrization rate and MOR were obtained at the specimen of 35 wt% metallic silicon in nitrization reaction. 5) It seems that increment of $\alpha$-Si3N4 and $\alpha$-Al2O3 phase during nitrization was due to the decomposition of Al4SiC4 existed in carbonized kaolin. 6) Si3N4 bonded SiC-Al2O3 composite were fabricated from kaolin at relatively low temperature (135$0^{\circ}C$).