• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.11a
• /
• pp.164-164
• /
• 2015

Al과 Al합금은 경량금속으로 가공성과 내식성이 우수하여 철강제품의 부식방지, 고효율 반사체 등의 산업 분야에 널리 이용된다. 본 연구에서는 Al과 Al-3wt%Si, Al-10wt%Si의 Al 합금을 마그네트론 스퍼터링으로 코팅하였고 외부 자기장 변화와 빗각 증착에 따른 반사율과 조직 변화 등의 물성을 비교 분석하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2011.05a
• /
• pp.126-126
• /
• 2011

Al과 Al합금은 철강제품의 부식방지, 빛 반사체 등의 산업 분야에 널리 이용된다. 본 연구에서는 Al과 Al-3wt%Si, Al-10wt%Si의 Al 합금을 마그네트론 스퍼터링으로 코팅하였고 스퍼터링 파워와 외부 자기장 변화에 따른 반사율과 조직 변화 등의 물성을 비교 분석하였다.

• Korean Journal of Materials Research
• /
• v.24 no.5
• /
• pp.266-270
• /
• 2014

Aluminum nitride(AlN) films were grown on the C-face and on the Si-face of (0001) silicon carbide(SiC) substrates using plasma-assisted molecular-beam epitaxy(PA-MBE). This study was focused on first-stage growth manipulation prior to the start of AlN growth. Al pre-exposure, N-plasma pre-exposure, and simultaneous exposure(Al and N-plasma) procedures were used in the investigation. In addition, substrate polarity and, first-stage growth manipulation strongly affected the growth and properties of the AlN films. Al pre-exposure on the C-face and on the Si-face of SiC substrates prior to initiation of the AlN growth resulted in the formation of hexagonal hillocks on the surface. However, crack formation was observed on the C-face of SiC substrates without Al pre-exposure. X-ray rocking-curve measurements revealed that the AlN epilayers grown on the Si-face of the SiC showed relatively lower tilt and twist mosaic than did the epilayers grown on the C-face of the SiC. The results from the investigations reported in this paper indicate that the growth conditions on the Si-face of the SiC without Al pre-exposure was highly preferred to obtain the overall high-quality AlN epilayers formed using PA-MBE.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.332-341
• /
• 1998

Reaction kinetics for the solid - state reaction of ${\alpha}-Al_2O_3$with amorphous $SiO_2$to produce mullite ($3Al_2O_3;{cdot};2SiO_2$) was studied in the temperature range of 1450~$1480^{\circ}C$. Rate of kinetic reaction were determined by using $SiO_2$- coated $Al_2O_3$ compact containing 28.16 wt.% $SiO_2$and heating the reactant mixtures in MgO at definite temperature for various times. Amount of products and unreacted reactants were determined by X-ray diffractometry. Data from the volume fraction and ratio of peak intensities of mullite indicated that the reaction of ${\alpha}-;Al_2O_3$ with $SiO_2$to form $3Al_2O_3\;{\cdot}\;2SiO_2$ start between 1450 and $1480^{\circ}C$. The activation energy for solid-state reaction was determined by using the Arrhenius equation; The activation energy was 31.9 kJ/mol.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.10
• /
• pp.665-670
• /
• 2016

Prevailing dissemination of machine tools and cutting technology have caused drastic developments of high speed dry machining with work materials of high hardness, and demands on the high-hardness-materials with high efficiency have become increasingly important in terms of productivity, cost reduction, as well as environment-friendly issue. Addition of Si to TiAlN has been known to form nano-composite coating with higher hardness of over 30 GPa and oxidation temperature over $1,000^{\circ}C$. However, it is not easy to add Si to TiAlN by using conventional PVD technologies. Therefore, Ti-Al-Si-N have been prepared by hybrid process of PVD with multiple target sources or PVD combined with PECVD of Si source gas. In this study, a single composite target of Ti-Al-Si was prepared by powder metallurgy of MA (mechanical alloying) and SPS (spark plasma sintering). Properties of he resulting alloying targets were examined. They revealed a microstructure with micro-sized grain of about $1{\sim}5{\mu}m$, and all the elements were distributed homogeneously in the alloying target. Hardness of the Ti-Al-Si-N target was about 1,127 Hv. Thin films of Ti-Al-Si-N were prepared by unbalanced magnetron sputtering method by using the home-made Ti-Al-Si alloying target. Composition of the resulting thin film of Ti-Al-Si-N was almost the same with that of the target. The thin film of Ti-Al-Si-N showed a hardness of 35 GPa and friction coefficient of 0.66.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.151-154
• /
• 2003

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

• Journal of the Korean institute of surface engineering
• /
• v.50 no.3
• /
• pp.219-224
• /
• 2017

The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively

• Journal of the Korean Society for Heat Treatment
• /
• v.31 no.3
• /
• pp.97-103
• /
• 2018

The objective of this study is to develop the mechanical properties of AlSiCu aluminum alloy by the two-step solution heat treatment. The microstructure of gravity casting specimen represents a typical dendrite structure having a secondary dendrite arm spacing (SDAS) of 40 mm. In addition to the Al matrix, a large amount of coarsen eutectic Si phase, $Al_2Cu$ intermetallic phase, and Fe-rich phases are generated. The eutectic Si phases are fragmented and globularized with solution heat treatment. Also, the $Al_2Cu$ intermetallic phase is resolutionized into the Al matrix. The $2^{nd}$ solution temperature at $525^{\circ}C$ might be a optimum condition for enhancement of mechanical properties of AlSiCu aluminum alloy.

• Journal of Powder Materials
• /
• v.6 no.4
• /
• pp.286-293
• /
• 1999

This study was to analyse the relationship between process parameters of the sintered composite and plasma nitriding properties with pulsed DC plasma. Fe-40at%$SiC_p$ composites of full density were fabricated by hot pressing at 1100~$1150^{\circ}C$. Sintered Fe-40at%Al and Fe-40at%$Al/SiC_p$ alloys were nitrided under pulsed DC plasma. Excellent surface hardness in the FeAl alloys could be obtained by plasma nitriding. ($H_v$ :100gf, diffusion layer : 1100~$1450kg/mm^2$, matrix : 330~$360kg/mm^2$) The wear resistance of $FeAl/SiC_p$ composites were improved about by 4~6times than FeAl and nitrided $FeAl/SiC_p$ were improved about 2 times than $FeAl/SiC_p$ matrix.

• International Journal of Korean Welding Society
• /
• v.2 no.2
• /
• pp.42-46
• /
• 2002

The solidification cracking susceptibilities of Al-Mg-Si alloy laser welds were assessed using the self-restraint tapered specimen crack test. The cracking susceptibility of 6061 and 6082 Al-Mg-Si alloy laser welds was substantially reduced when the filler wire containing high Si such as Al-12 wt.% Si (4047A) was used. The amount of eutectic was observed to affect the solidification cracking of Al-Mg-Si alloy laser welds. Abundant eutectic seems to heal the cracking and reduces the cracking susceptibility, while an initial increase in eutectic liquid leads to the increased cracking tendency.