• 제목/요약/키워드: Al target

검색결과 499건 처리시간 0.026초

Ti-Al-Si-N 박막 제작을 위한 합금 타겟 제조 및 박막의 기계적 특성 (Fabrication of Alloy Target for Formation of Ti-Al-Si-N Composite Thin Film and Their Mechanical Properties)

  • 이한찬
    • 한국전기전자재료학회논문지
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    • 제29권10호
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    • pp.665-670
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    • 2016
  • Prevailing dissemination of machine tools and cutting technology have caused drastic developments of high speed dry machining with work materials of high hardness, and demands on the high-hardness-materials with high efficiency have become increasingly important in terms of productivity, cost reduction, as well as environment-friendly issue. Addition of Si to TiAlN has been known to form nano-composite coating with higher hardness of over 30 GPa and oxidation temperature over $1,000^{\circ}C$. However, it is not easy to add Si to TiAlN by using conventional PVD technologies. Therefore, Ti-Al-Si-N have been prepared by hybrid process of PVD with multiple target sources or PVD combined with PECVD of Si source gas. In this study, a single composite target of Ti-Al-Si was prepared by powder metallurgy of MA (mechanical alloying) and SPS (spark plasma sintering). Properties of he resulting alloying targets were examined. They revealed a microstructure with micro-sized grain of about $1{\sim}5{\mu}m$, and all the elements were distributed homogeneously in the alloying target. Hardness of the Ti-Al-Si-N target was about 1,127 Hv. Thin films of Ti-Al-Si-N were prepared by unbalanced magnetron sputtering method by using the home-made Ti-Al-Si alloying target. Composition of the resulting thin film of Ti-Al-Si-N was almost the same with that of the target. The thin film of Ti-Al-Si-N showed a hardness of 35 GPa and friction coefficient of 0.66.

Twin Target Sputtering System with Ladder Type Magnet Array for Direct Al Cathode Sputtering on Organic Light Emitting Diodes

  • Moon, Jong-Min;Kim, Han-Ki
    • Journal of Information Display
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    • 제8권3호
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    • pp.5-10
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    • 2007
  • Twin target sputtering (TTS) system with a configuration of vertically parallel facing Al targets and a substrate holder perpendicular to the Al target plane has been designed to realize a direct Al cathode sputtering on organic light emitting diodes (OLEDs). The TTS system has a linear twin target gun with ladder type magnet array for effective and uniform confinement of high density plasma. It is shown that OLEDs with Al cathode deposited by the TTS show a relatvely lower leakage current density $({\sim}1{\times}10^{-5}mA/cm^2)$ at reverse bias of -6V, compared to that ($1{\times}10^{-2}{\sim}10^{-3}$ $mA/cm^2$ at -6V) of OLEDs with Al cathodes grown by conventional DC magnetron sputtering. In addition, it was found that Al cathode films prepared by TTS were amorphous structure with nanocrystallines due to low substrate temperature. This demonstrates that there is no plasma damage caused by the bombardment of energetic particles. This indicates that the TTS system with ladder type magnet array could be useful plasma damage free deposition technique for direct Al cathode sputtering on OLEDs or flexible OLEDs.

Cr-Zr-Al segment 타겟을 장착한 Unbalanced magnetron sputtering 활용하여 증착한 CrZr-Al-N 박막의 thermal stability와 microstructure에 관한 연구 (Thermal stability and microstructure of CrZr-Al-N films synthesized by unbalanced magnetron sputtering with Cr-Zr-Al segment target)

  • 김동준;라정현;이상율
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2012년도 춘계학술발표회 논문집
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    • pp.173-173
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    • 2012
  • 본 연구는 segment target을 장착한 unbalanced magnetron sputtering을 활용하여 CrZr-Al-N 박막을 합성하고 박막의 고온안정성과 미세구조를 연구하는데 그 목적이 있다. 박막의 Al 함량을 조절하기 위하여 각 segment target은 Cr,Zr을 일정vol% 유지하며 Al vol%만 변화하여 설계하였다. 박막의 고온안정성을 실험하기 위해 각 시편은 $100{\sim}500^{\circ}C$ 사이의 온도에서 1시간씩 annealing 처리를 실시한 후에 경도를 측정하였다. 박막의 미세구조 단면을 위해 FE-SEM을 이용하였으며 이밖에 박막의 조성, 경도 및 결정구조를 측정하기 위해 EDS, microhardness testing system, XRD를 사용하였다. Al 부피비를 변화시킨 Segment target을 활용한 박막합성에서 박막의 Al함량은 각각 1/11에서 4.6at.%, 1/5에서 8.1at.%, 1/3에서 12.9at.% 로 나타났으며, 박막의 경도는 4.6~12.9at.% 사이의 Al 함량을 갖는 박막에 대해 모두 유사한 값을 가졌으며 31GPa로 측정되었다. 박막의 단면 구조 역시 4.6~12.9at.% 사이의 Al 함량을 갖는 박막에 대해 모두 columnar 구조가 관찰되었다.

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유방촬영용 X선관 target/filter 조합에 따른 MTF영상평가에 관한 고찰 (Evaluation of MTF Image by Target/Filter Combined of X-ray Tube Using Mammography)

  • 양한준;주미화;고신관
    • 대한방사선기술학회지:방사선기술과학
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    • 제30권2호
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    • pp.113-119
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    • 2007
  • 인체의 유방은 조직 간의 엑스선 흡수차가 작기 때문에 엑스선관 Target/Filter의 적절한 조합으로 피사체의 대 조도를 높이는 일이 중요하다. 최근 장비들은 다양한 유방두께와 유선조직 밀도에 따라서 Target/Filter의 조합을 변화시켜 환자의 피폭 선량 경감 및 진단에 알맞는 화질을 얻고 있다. 본 실험은 Target/Filter의 조합에 따라 해상력 챠트를 이용하여 MTF 영상의 평가와 유방 팬톰 영상을 평가하여 다음과 같은 결론을 얻었다. 1. 아크릴 두께(2 cm, 3 cm, 4 cm)의 조합(Mo/Mo, Mo/Rh. Mo/Al, Rh/Rh, Rh/Al)에 따라 고유원자번호에 의해 엑스선 에너지에서 큰 차이를 보였다. 2. MTF 곡선에서 선예도를 나타내는 MTF 0.5에서의 Lp/mm 값은 아크릴 2 cm일 때 Mo/Mo은 2.4 Lp/mm, 4 cm일 때 Mo/Rh은 2.63 Lp/mm, 6 cm일 때 Rh/Rh은 2.9 Lp/mm로 높게 나타났다. 3. 분해능을 나타내는 MTF 값은 아크릴 2 cm일 때 Mo/Mo은 6.0 Lp/mm, 4cm일 때 Rh/Al은 4.60 Lp/mm, 6 cm일 때 Rh/Al은 6.03 Lp/mm로 MTF 값이 높게 나타났다. 4. 시각적 식별이 가능한 2.5 Lp/mm에서 MTF 값은 2 cm일 때 Mo/Mo은 0.48 Lp/mm, 4 cm일 때 Mo/Rh은 0.53 Lp/mm, 6 cm일 때 Rh/Rh은 0.59 Lp/mm로 높게 나타났다. 5. 유방 팬톰 영상평가에서는 Mo/Mo일 때 12점, Mo/Rh일 때 11점, Rh/Rh일 때 10.5점, Mo/Al일 때 10점, Rh/Al일 때 9점 순으로 나타났다.

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직류 반응성 sputtering법으로 제막된 ZnO:Al 박막의 물성에 미치는 증착조건 및 타겟의 영향 (Effect of sputtering parameters and targets on properties of ZnO:Al thin films prepared by reactive DC magnetron sputtering)

  • 유병석;오근호
    • 한국결정성장학회지
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    • 제8권4호
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    • pp.592-598
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    • 1998
  • ZnO($Al_2O_3\;2%$ 2% doped) 산화물 타겟과 금속 Zn(Al 2% doped) 타겟을 사용하여 반응성 직류 마그네트론 스퍼터링법으로 산소 가스 및 인가 전력을 조절하면서 AZO(Aluminum doped Zine Oxide) 막을 증착하였다. 비저항과 평균 투과율을 고려할 때 최적의 투명전도성을 보이는 조건은 산화물 타겟의 경우 산소가스의 비가 $0.5{\times}10^{-2}~1.0{\times}10^{-2}$범위이며, 금속 타겟의 경우 인가전력 0.6kW에서는 0.215~0.227, 1.0kW에서는 0.305~0.315이었다. 각 최적조건에서 제막된 AZO 막의 비저항은 $1.2~1.4{\times}10^{-3} {\Omega}{\cdot}cm$cm으로 타겟에 의한 차이는 없었다.

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Fabrication of TiAl Target by Mechanical Alloying and Applications in Physical Vapour Deposition Coating

  • Gabbitas, Brian;Cao, Peng;Raynova, Stiliana;Zhang, Deliang
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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    • pp.729-730
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    • 2006
  • The research involves the development of a powder metallurgical route for producing good quality TiAl targets for making physical vapour deposition (PVD) coatings. Mixtures of elemental titanium and aluminium powders were mechanically milled using a novel discus milling technique under various conditions. Hot isotropic pressing (HIP) was then employed for consolidation of the mechanically alloyed powders. A cathodic arc vapour deposition process was applied to produce a TiAlN coating. Microstructural examination was conducted on the target material and PVD coatings, using X-ray diffractometry (XRD), X-ray photoelectron spectrometry (XPS) and scanning electron microscopy (SEM). It has been found that combining mechanical alloying and HIP enable us to produce fairly good quality of TiAl based target. The PVD coatings obtained from the TiAl target showed very high microhardness values.

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저온 분사 공정을 통하여 형성된 Al/Ni 복합소재 코팅의 특성 평가 (Property Evaluation of Kinetic Sprayed Al-Ni Composite Coatings)

  • 변경준;김재익;이창희;김시조;이성
    • Journal of Welding and Joining
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    • 제32권5호
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    • pp.72-79
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    • 2014
  • Shaped charge(SC) ammunition is a weapon that penetrates directly the target by made jet from metal liner on impacting at a target. In SC, the liner occupies significantly important role causing an explosion and penetration of the target. The Al-Ni composite coating was deposited on copper liner in a solid state via kinetic spraying to improve the explosive force. The mechanical properties, reactivity and microstructure were investigated to confirm the possibility of kinetic sprayed Al/Ni composite coating as a reactive liner material. Reactive liner using Al/Ni composite exhibited much enhanced reactivity than pure copper liner due to Self-propagating High-temperature Synthesis (SHS) reaction with significantly improved adhesive bond strength. Especially, among the Al/Ni composite coatings, AN11 (the Al versus Ni atomic percent ratio is 1:1) showed the greatest reactivity due to its widest reaction area between deposited Al and Ni.

TTS를 이용하여 PEN 기판 상에 성막한 플렉시블 전면 발광 OLED용 IZO/Al multilayer 애노드의 특성 (Investigation of IZO/Al multilayer anode grown on PEN substrate by a twin target sputtering system for flexible top emitting organic light emitting diodes)

  • 오진영;문종민;정진아;김한기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.444-445
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    • 2007
  • IZO/Al multilayer anode films for flexible top emitting organic light emitting diodes (TOLEDs) were grown on PEN (polyethylen-enaphthelate) substrate using twin target sputter (TTS) system. To investigate electrical and optical properties of IZO/Al multilayer films, 4-point probe method and UV/Vis spectrometer were used, respectively. From a IZO/Al multilayer films with 100nm-thick Al, sheet resistance of $1.4{\Omega}/{\square}$ and reflectance of above 62% at a range of 500~550nm wavelength could be obtained, In addition, structural and surface properties of IZO/Al multilayer films were analyzed by XRD (X-ray diffraction) and FESEM (field emission scanning electron microscopy) and AES (auger electron spectroscope), respectively. Moreover, flexibility of IZO/Al multilayer anode films were examined by bending test method.

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반응성 sputtering법으로 제막된 ZnO : Al 박막의 전기.광학적 특성 (Electrical and optical properties of ZnO:Al thin films prepared by reactive sputtering method)

  • 유병석;유세웅;이정훈
    • 한국결정성장학회지
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    • 제6권4호
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    • pp.480-492
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    • 1996
  • Al이 2 wt% 포함되어 있는 Zn 금속 target을 사용하여 반응성 직류 magnetron sputtering법으로 AZO(Aluminum doped Zinc Oxide) 투명전도막을 제막하였다. 반응성 가스인 산소의 분압과 유량을 조절하여 투과율과 전도도가 모두 우수한 전이영역을 발견하였고 전이영역을 안정적으로 유지하기 위한 증착조건을 찾아냈다. ZnO:Al막의 XRD분석결과 산화막이나 전이영역에서 증착된 막들은 ZnO결정의 (002)면의 peak가 유일하게 관찰되었다.

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유도결합 플라즈마 스퍼터링을 이용한 플라스틱 기판 상의 Al이 도핑된 ZnO 박막 증착 (Deposition of Al Doped ZnO Films Using ICP-assisted Sputtering on the Plastic Substrate)

  • 정승재;한영훈;이정중
    • 한국표면공학회지
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    • 제39권3호
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    • pp.98-104
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    • 2006
  • Al-doped ZnO (AZO) films were deposited on the plastic substrate by inductively coupled plasma (ICP) assisted DC magnetron sputtering. The AZO films were produced by sputtering a metallic target (Zn/Al) in a mixture of argon and oxygen gases. AZO films with an electrical resistivity of ${\sim}10^3\;{\Omega}cm$ and an optical transmittance of 80% were obtained even at a low deposition temperature. In-situ process control methods were used to obtain stable deposition conditions in the transition region without any hysteresis effect. The target voltage was controlled either at a constant DC power. It was found that the ratio of the zinc to oxygen emission intensity, I (O 777)/I (Zn 481) decreased with increasing the target voltage in the transition region. The $Ar/O_2$ plasma treatment improve the adhesion strength between the polycarbonate substrate and AZO films.