• 한국레이저가공학회지
• /
• 제3권2호
• /
• pp.25-33
• /
• 2000

One of perspective direction of microfabrication is direct laser writing technology that allows to create metal, semiconductive and dielectric micropatterns on substrate surface. In this work, a two step method, the combination of seed forming process, in which metallic Al seed was selectively generated on AlN ceramic substrate by direct writing technique using a pulsed Nd : YAG laser and subsequent electroless Ni plating on the activated Al seed, was presented. The effects of laser parameters such as pulse energy, scanning speed and pulse frequency on shape of Alseed and conductor line after electroless Ni plating were investigated. The nature of the laser activated surface is analyzed from XPS data. The line width of this metallic Al and Ni is analyzed using SEM. As a results, Al seed line with 24㎛ width and 100㎛ isolated line space is obtained. Finally, laser direct writing can be applied in the field between thin and thick film technique in electronic industry.

• 한국표면공학회지
• /
• 제35권6호
• /
• pp.408-414
• /
• 2002

TiN and TiAlN coating layer were deposited on WC-Co steel substrates by an arc ion plating(AIP) technique. The crystallinity and morphology for the deposited coating layers were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The impact behaviors of the deposited TiN and TiAlN coating layer were investigated with a ball-on-plate impact tester. Beyond $10^2$ impact cycle, TiAlN coating layer showed superior impact wear resistance compared to TiN coating layer. On the other hand, both TiN and TiAlN coating layers started to be partially failed between $10^2$ and $10^3$ impact cycle. Above $10^3$ impact cycle, TiN and TiAlN coating layers showed similar impact behavior because of the substrate effect.

• 반도체디스플레이기술학회지
• /
• 제3권2호
• /
• pp.17-21
• /
• 2004

Aluminum nitride(AlN) thin films were deposited on silicon substrate by reactive RF magnetron sputtering without substrate heating. We investigated the dependence of some properties for AlN thin film on sputtering conditions such as working pressure, $N_2$ concentration and RF power. XRD, Ellipsometer and AES has been measured to find out structural properties and preferred orientation of AlN thin films. Deposition rate of AlN thin film was increased with an increase of RF power and decreased with an increase of $N_2$ concentration. AES in-depth measurements showed that stoichiometry of Aluminium and Nitrogen elements were not affected by $N_2$ concentration. It has shown that low working pressure, low $N_2$ concentration and high RF power should be maintained to deposit AlN thin film with a high degree of (0002) preferred orientation.

• 한국표면공학회지
• /
• 제29권2호
• /
• pp.100-108
• /
• 1996

The internal stress of acidic electroless nickel deposits on zincated aluminum was determined by spiral contractometer. Several plating conditions such as inhibitor and complexing agent concentrations and pH affecting the internal stress were studied. The resulting intrinsic stress contribution to the total stress was discussed in terms of phosphorous content of the deposit, solution pH, and surface morphology. However, the most important was found to be thermal stress for the total stress of Al substrate, because of high thermal expansion coefficient of the aluminum substrate.

• Tribology and Lubricants
• /
• 제34권2호
• /
• pp.67-73
• /
• 2018

Ni-Al intermetallic coating technology is an available method for the strengthening of aluminum substrate. In this study, Ni-Al intermetallics were coated on an aluminum substrate through a reaction synthesis process at a temperature lower than melting point of aluminum. And the sliding wear properties of the coatings have been investigated to verify their usability and compared the wear properties with those of a cast Al-12.5%Si alloy and an anodizing layer on aluminum. Results show that the wear rate of the coating layer greatly increased at 1 m/s and 1.5 m/s when compared with that of the cast Al-12.5%Si alloy. Much pitting damages were observed on the worn surfaces at these sliding speeds, unlike at other sliding speeds. The wear of the intermetallic coating layer at these sliding speeds seems to be increased by pitting as a consequence of adhesion. In contrast, wear of the coating layer at other speeds hardly occurs, regardless of wear periods. Nevertheless, the wear properties of the intermetallic coating layer on the aluminum substrate through the reaction synthesis process are more stable than those of anodized aluminum and are superior to those of the cast Al-12.5%Si alloy in a steady-state wear period.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.525-528
• /
• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering(FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of $O_2$ gas and substrate temperature. When the $O_2$ gas rate of 0.3 and substrate temperature $200^{\circ}C$, ZnO:Al thin film had strongly oriented c-axis and lower resistivity( < $10^{-4}{\Omega}-cm$ ).

• 마이크로전자및패키징학회지
• /
• 제7권3호
• /
• pp.27-29
• /
• 2000

Lift-off를 이용한 DLC-coated Si-tip FEA 제조에 있어서 gate 절연막의 측면에 DLC가 coating되는 것을 방지하기 위해 기판 상에 Al 희생층을 경사-회전 증착한 뒤 DLC를 coating하고, 다음으로 희생층을 식각하여 tip 이외의 DLC를 제거하는 방법을 제안하였다. 이러한 Al희생층을 이용한 lift-off공정에 의해 제조된 DLC-coated Si-tip FEA의 전류전압 특성과 전류 표동 특성을 조사하였으며, gate 누설 전류의 감소와 방출 전류의 안정성을 확인하였다.

• E2M - 전기 전자와 첨단 소재
• /
• 제10권7호
• /
• pp.706-712
• /
• 1997

AlN(Aluminium Nitride) thin films were prepared using by RF sputtering method on the Si(100) and Si(111) substrates as the parameters of the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio and investigated by X-ray diffraction, IR spectrometry, n&k analyzer. For the Si(100) substrate, the AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. For the Si(111) substrate, the (002) AlN thin films were obtained under the nitrogen of 100 vol.%. In case of the thin film prepared in the condition of above 60 vol.% of the nitrogen, the average value of the surface roughness of the film was 151$\AA$. From the changes of the half widths of E$_1$[TO] phonon bands at the wavenumber of 680$cm^{-1}$ /, it were compared of the crystallinities of the films which were grown under the different conditions. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.%. Its due to the nitridation of the Al target surface and getting low of the sputtering yield by the $N_2$/Ar ratio being increased.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.408-411
• /
• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure, discharge power and doping amounts of Al on the electrical, optical and morphological properties were investigated experimentally. The effect of bias voltage on the electrical properties of ZnO thin film were also studied. Films with lowest resistivity of $5.4{\times}10^{-4}\;{\Omega}-cm$ have been achieved in case of films deposited at 1mtorr, $400^{\circ}C$ with a substrate bias of +10V for 840nm in film thickness.

• Korean Chemical Engineering Research
• /
• 제52권3호
• /
• pp.340-346
• /
• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.