• Title/Summary/Keyword: Al layer

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Seasonal and Vertical Distribution of Planktonic Copepods in the Korea Strait (대한해협 부유성 요각류의 계절별 수직분포)

  • LEE Chang Rae;LEE Pyung Gang;PARK Chul
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.32 no.4
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    • pp.525-533
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    • 1999
  • In the Korea Strait total of 96 copepod taxa (40 genera) were identified from the seasonal and vertically stratified samples. Species richness was the highest in fall and the abundance was the highest in spring. Spatial differences were not significant within each season, but was meaningful among seasons. The water column layers of high abundances were near bottom in spring, and surface in summer and fall. Species association of copepods was examined by the cluster analysis. There are the two different results on the timing of the intrusion of East Sea Cold Water to the Korea Strait in the deeper layer based on physical data [in winter (Lee et al., 1938) vs in summer (Cho and Kim (1998)]. This study based on the distributional characteristics of copepods supported Cho and Kim (1998)'s result. Although sea water temperatures was one of major controlling factors of the copepod distribution in this strait, biological interrelation among the species such as common or exclusive exploitation of the habitat was also responsible for the observed distributional patterns.

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The Study on Filling Factor of Radiation Shielding Lead-free Sheet Via Screen Printing Method (스크린 프린팅 공법을 통한 방사선 무연 차폐 시트에 관한 연구)

  • Kang, Sang-Sik;Jeong, Ah-Rim;Lee, Su-Min;Yang, Seung-Woo;Kim, Kyo-Tae;Heo, Ye-Ji;Park, Ji-Koon
    • Journal of the Korean Society of Radiology
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    • v.12 no.6
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    • pp.713-718
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    • 2018
  • In many previous studies, monte carlo simulation is used to produce lead-free shielding sheet, and the possibility of radiation shielding capability and weight reduction is presented. But it is difficult to simulation for binder and micro-pores because of In fact it does not provide sufficient information necessary for the commercialization process. Therefore, in this paper, the results of radiation shielding capability corresponding to filling factor was presented by using the screen printing method to provide information on gel-paste required for the commercialization process. In this study, the geometric setup for evaluate of radiation shielding ability was designed to comply with IEC 61331-1:2014 and KS A 4025. In addition, radiation irradiation conditions were 100 kVp filtered with 2.0 mmAl total filtration was applied according to KS A 4021 standard. In this study, Pb $1270{\mu}m$, $BaSO_4$ $3035{\mu}m$, $Bi_2O_3$ $1849{\mu}m$ and $WO_3$ $2631{\mu}m$ were analyzed based on ten value layer. Additionally, the filling factor was analyzed as $BaSO_4$ 38.6%, $Bi_2O_3$ 27.1%, $WO_3$ 30.15%. However, in the case of applying low-temperature high-pressure molding in the future, it is expected that the radiation shielding capability can be sufficiently improved by reducing the porosity while increasing the filling factor.

Estimation of the Percent of the Vote by Adjustment of Voter Turnout in Election Polls (선거여론조사에서 투표율 반영을 통한 득표율 추정)

  • Kim, Jeonghoon;Han, Sang-Tae;Kang, Hyuncheol
    • Journal of the Korean Data Analysis Society
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    • v.20 no.6
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    • pp.2873-2881
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    • 2018
  • It is very important to obtain objective and credible information through election polls in order to contribute to the correct voting behavior of the voters or to establish appropriate election strategies for candidates or political parties. Therefore, many related organizations such as political parties, media organizations, and research institutions have been making efforts to improve the accuracy of the results of the polls and the election prediction. Kim et al. (2017) analyzed whether the non-response group responded that there is no support candidate in the election survey to increase the accuracy of the estimation of the vote rate. As a result, it has been confirmed that the accuracy of the estimation of the vote rate can be significantly improved by performing an appropriate classification on the non-response layer. In this study, we propose a method to estimate the turnout by each strata (sex, age group) under the condition that the total turnout rate is given for a specific district (region) and propose a procedure to predict the vote rate by reflecting the turnout. In addition, case studies were conducted using data gathered through telephone interviews for the 20th National Assembly elections in 2016.

Strength Development Characteristics of Clay Stabilized with Electric Furnace Steel Slag (전기로 제강슬래그로 안정화된 연약점토의 강도 발현 특성)

  • Hyeongjoo Kim;Taegew Ham;Taewoong Park;Taeeon Kim
    • Journal of the Korean GEO-environmental Society
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    • v.25 no.5
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    • pp.29-37
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    • 2024
  • This study aimed to investigate the changes in chemical components that occur when weak clay is mixed with steel slag modified with calcium oxide, and to understand the expression characteristics of compressive strength according to hydrophilicity and curing time. XRF testing, SEM imaging, vane shear strength and uniaxial compressive strength testing were conducted. Calcium (Ca) released from the steel slag increases the Ca content in clay by increasing the number of crystal particles and forming a coating layer known as calcium silicate hydrate (CaO-SiO2-H2O) through chemical reactions with SiO2 and Al2O3 components. The weak clay stabilized with steel slag is classified into an initial inactive zone where strength relatively does not increase and an activation zone where strength increases over curing time. The vane shear strength of the initial inactive area was found to be 4.4 to 18.4 kN/m2 in the state of the weight mixing ratio Rss 30% (steel slag 30% + clay 70%). In the case of the active area, the maximum uniaxial compressive strength increased to 431.8 kN/m2 after 480 hours of curing time, which increased due to the apparent adhesion strength of clay through pozzolanic reaction. Therefore, considering the strength expression characteristics of stabilized mixed clay based on the mixing ratio (Rss) during the recycling of steel slag can enhance its practicality in civil engineering sites.

Electrical and Chemical Properties of ultra thin RT-MOCVD Deposited Ti-doped $Ta_2O_5$

  • Lee, S. J.;H. F. Luan;A. Mao;T. S. Jeon;Lee, C. h.;Y. Senzaki;D. Roberts;D. L. Kwong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.4
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    • pp.202-208
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    • 2001
  • In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

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HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate (R-plane 사파이어 기판위의 GaN/InGaN 이종접합구조의 HVPE 성장)

  • Jeon, H.S.;Hwang, S.L.;Kim, K.H.;Jang, K.S.;Lee, C.H.;Yang, M.;Ahn, H.S.;Kim, S.W.;Jang, S.H.;Lee, S.M.;Park, G.H.;Koike, M.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.1
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    • pp.6-10
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    • 2007
  • The a-plane GaN layer on r-plane $Al_2O_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists of a flown over mixed-sourec are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and $NH_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperatures of GaN source zone is $650^{\circ}C$. In case of InGaN, the temperature of source zone is $900^{\circ}C$. The grown temperatures of GaN and InGaN layer are $820^{\circ}C\;and\;850^{\circ}C$, respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.

Microtube Light-Emitting Diode Arrays with Metal Cores

  • Tchoe, Youngbin;Lee, Chul-Ho;Park, Junbeom;Baek, Hyeonjun;Chung, Kunook;Jo, Janghyun;Kim, Miyoung;Yi, Gyu-Chul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.287.1-287.1
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    • 2016
  • Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

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Via-size Dependance of Solder Bump Formation (비아 크기가 솔더범프 형성에 미치는 영향)

  • 김성진;주철원;박성수;백규하;이상균;송민규
    • Journal of the Microelectronics and Packaging Society
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    • v.8 no.1
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    • pp.33-38
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    • 2001
  • We investigate the via-size dependance of as-electroplated- and reflow-bump shapes for realizing both high-density and high-aspect ratio of solder bump. The solder bump is fabricated by subsequent processes as follows. After sputtering a TiW/Al electrode on a 5-inch Si-wafer, a thick photoresist for via formation it obtained by multiple-codling method and then vias with various diameters are defined by a conventional photolithography technique using a contact alinger with an I-line source. After via formation the under ball metallurgy (UBM) structure with Ti-adhesion and Cu-seed layers is sputtered on a sample. Cu-layer and Sn/pb-layer with a competition ratio of 6 to 4 are electroplated by a selective electroplating method. The reflow-bump diameters at bottom are unchanged, compared with as-electroplated diameters. As-electroplated- and reflow-bump shapes, however, depend significantly on the via size. The heights of as-electroplated and reflow bumps increase with the larger cia, while the aspect ratio of bump decreases. The nearest bumps may be touched by decreasing the bump pitch in order to obtain high-density bump. The touching between the nearest bumps occurs during the overplating procedure rather than the reflowing procedure because the mushroom diameter formed by overplating is larger than the reflow-bump diameter. The arrangement as zig-zag rows can be effective for realizing the flip-chip-interconnect bump with both high-density and high-aspect ratio.

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Transpiration Prediction of Sweet Peppers Hydroponically-grown in Soilless Culture via Artificial Neural Network Using Environmental Factors in Greenhouse (온실의 환경요인을 이용한 인공신경망 기반 수경 재배 파프리카의 증산량 추정)

  • Nam, Du Sung;Lee, Joon Woo;Moon, Tae Won;Son, Jung Eek
    • Journal of Bio-Environment Control
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    • v.26 no.4
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    • pp.411-417
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    • 2017
  • Environmental and growth factors such as light intensity, vapor pressure deficit, and leaf area index are important variables that can change the transpiration rate of plants. The objective of this study was to compare the transpiration rates estimated by modified Penman-Monteith model and artificial neural network. The transpiration rate of paprika (Capsicum annuum L. cv. Fiesta) was obtained by using the change in substrate weight measured by load cells. Radiation, temperature, relative humidity, and substrate weight were collected every min for 2 months. Since the transpiration rate cannot be accurately estimated with linear equations, a modified Penman-Monteith equation using compensated radiation (Shin et al., 2014) was used. On the other hand, ANN was applied to estimating the transpiration rate. For this purpose, an ANN composed of an input layer using radiation, temperature, relative humidity, leaf area index, and time as input factors and five hidden layers was constructed. The number of perceptons in each hidden layer was 512, which showed the highest accuracy. As a result of validation, $R^2$ values of the modified model and ANN were 0.82 and 0.94, respectively. Therefore, it is concluded that the ANN can estimate the transpiration rate more accurately than the modified model and can be applied to the efficient irrigation strategy in soilless cultures.

The Low-field Tunnel-type Magnetoresistance Characteristics of Thin Films Deposited on Different Substrate (기판 효과에 따른 저 자장 영역에서의 자기저항 효과에 관한 연구)

  • Lee, Hi-Min;Shim, In-Bo;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
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    • v.12 no.2
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    • pp.41-45
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    • 2002
  • The low-field tunnel-type magnetoresistance (MR) properties of sol-gel derived $La_{0.7}Pb_{0.3}MnO_3(LPMO)$ thin film deposited on different substrate have been investigated. Polycrystalline thin films were fabricated by spin-coating on $SiO_2/Si(100)$ substrate and that with yttria-stabilized zirconia (YSZ) buffer layer, while c-axis-oriented thim film was grown on $LaAlO_3(001)$ (LAO) single crystal substrate. The full width half maximum (FWHM) of the rocking curve scan of LPMO/LAO film is $0.32^{\circ}$. Tunnel-type MR ratio is 0.52 % in $LPMO/SiO_2/Si$(100) film and that of $LPMO/YSZ/SiO_2/Si$(100) film is as high as 0.68 %, whereas that of LPMO/LAO(001) film is less than 0.4 % under the applied field of 500 Oe at 300 K. Well-pronounced MR hysteresis was registered with an MR peak in the vicinity of the coercive field. The low-field tunnel-type MR characteristics of thin films deposited on different substrates originates from the behavior of grain boundary properties.