• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.354-358
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• 1997

Crystal properties of wurtzite GaN films grown on $Al_2O_3$(0001) substrates under various nitrogen pressure and plasma power by electron cyclotron resonance molecular beam epitaxy were investigated by full width at half maximum of X-ray diffraction peak and scanning electron microscope. It was found that the nitrogen pressure has a large effect on the FWHM value of XRD, and the GaN film grown under the optimum nitrogen pressure contains high density of dislocations. These results suggest that the crystal quality is sensitive to the plasma source conditions and that the relaxation of stress depends of V/III ratio. However, substrate-surface nitridation has little effect on the relaxation of misfit stress.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.161-161
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• 2013

Two-dimensional electron gas (2DEG) has been investigated at the heterointerface between two insulating dielectric perovskite oxides, $LaAlO_3$ (LAO)/$SrTiO_3$ (STO). Properties of the 2DEG have attracted an enormous interest in condensed matter physics due to multifunctional properties such as the coexistence of ferromagnetism and superconductivity, as well as the high electron mobility. Here, we have grown $Ta_2O_5$ thin films using pulsed laser deposition on $SrTiO_3$ substrate to investigate the electric properties of the $Ta_2O_5$/STO heterointerface. Our research reveal that the non-polar $Ta_2O_5$/$TiO_2$ heterointerface favors the formation of 2DEG similar to that at the LAO/STO heterointerface. The metallic behavior was found in this heterointerface with the current about $10{\sim}100{\mu}A$ at 5 V by using conventional I-V measurements, when the $Ta_20_5$ film thickness reaches over critical thickness, $d_c{\simeq}2uc$. The finding that electrons was localized at $Ta_2O_5$/STO heterointerface have attracted to be strong and new candidate for nanoscale oxide device applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.287-290
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• 1998

It was investigated that the dielectric properties of ferroelectric materials using PZT-5A and PZT thin films. PZT-5A was 20mm diameters, 0.71mm, 0.51mm and 0.41mm thickness respectively and having c-axis preferred orientation. Electrodes(Al) were deposited by evaporation method. PZT thin film was deposited on Pt/SiO$_2$/Si substrate by RF magnetron sputtering method, and annealed at 750$^{\circ}C$ with RTA. Dielectric constants were measured automatically by computer measuring system. Dielectric constants were changed rapidly from 817 to 888 in 0.41mm thickness PZT-5A, 823 to 890 in 0.51mm and 822 to 839 in 0.71mm as the electric field grown. In the case of PZT thin film, dielectric constants were changed from 724 to 1173 in 4500${\AA}$ thickness, 721 to 1204 in 5500${\AA}$ thickness and 811 to 1407 in 7000${\AA}$ thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.251-254
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• 2001

This paper describes an efficiency improvement of buried contact solar cell (BSCS) with a structure of MgF$_2$/CeO$_2$/Ag/Cu/Ni grid/n$^{+}$ emitter/p-type Si base/p$^{+}$/Al. Theoretical and experimental investigations were performed on a double layer antireflection (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. An optimized DLAR coating shewed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 ${\mu}{\textrm}{m}$ to 1.1 ${\mu}{\textrm}{m}$. BCSC cell efficiency was improved from 16.2 % without any AR coating to 19.9 % by employing DLAR coatings. Further details on MgF$_2$/CeO$_2$ DLAR coatings on the BCSC cells are presented in this paper.per.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.147-151
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• 1999

YBCO step-edge Josephson junction were fabricated on sapphire substrates. The steps were formed on R-plane sapphire substrates by using Ar ion milling with PR masks. The step angle was controlled in the wide range from 25$^{\circ}$ to 50$^{\circ}$ by adjusting both the Ar ion incident angle and the photoresist mask rotation angle relative to the incident Ar ion beam. CeO$_2$ buffer layer and in-situ YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films was deposited on the stepped R-plane sapphire substrates by pulsed laser deposition method. The YBCO film thickness was varied to obtain the ratio of film thickness to step height in the range from 0.5 to 1. The step edge junction exhibited RSJ-like behaviors with I$_cR_n$ product of 100 ${\sim}$ 300 ${\mu}$V, critical current density of 10$^3$ ${\sim}$ 10$^5$ A/ cm$^2$ at 77 K.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.214-217
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• 1999

We investigated the quench characteristics of meander line type resistive superconducting fault current limiters based on YBCO thin films grown on 2" diameter LaAlO$_3$ substrates. A gold layer was deposited onto the 0.4 ${\mu}$ m thick YBCO film to disperse the heat generated at hot spots, prior to patterning into 1 mm wide meander lines by photolithography. The limiters were tested with simulated fault currents of various amplitudes. The quench started at 10 A and was completed within 1 msec at the fault current of 65 A$_{peak}$. The dynamic quench characteristics were explained based on the heat conduction within the film and the heat transfer between the film and the surrounding liquid nitrogen. The heat transfer coefficient per unit area was estimated to be 3.0 W/cm$^2$K.

• ETRI Journal
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• v.27 no.2
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• pp.181-187
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• 2005

Alkoxy-substituted poly(spirobifluorene)s and their copolymers with a triphenylamine derivative have been synthesized by Ni(0)-mediated polymerization. The polymers were well soluble in common organic solvents. Pure blue-light emissions without the long wavelength emission of poly(fluorene)s have been observed in the fluorescence spectra of polymer thin films. The light emitting diodes with a device configuration of ITO/PEDT:PSS(30 nm)/polymer(60 nm)/LiF(1 nm)/Al(100 nm) have been fabricated. The electroluminescence spectra showed the blue emissions without the long wavelength emission as observed in the fluorescence spectra. The relatively poor electroluminescence quantum yield of the homopolymer (0.017% @ 20 $mA/cm^{2}$) with color coordinates of (0.16, 0.07) has been improved by the introduction of triphenylamine moiety, and the copolymer with derivative exhibited an electroluminescence quantum yield of 0.15 % at 20 $mA/cm^{2}$ with color coordinates of (0.16, 0.08). Moreover, the introduction of polar side chains to the spirobifluorene moiety enhanced the device performance and led to the quantum yields of 0.6 to 0.7 % at 20 $mA/cm^{2}$, although there was some expense of color purities.

• 연구논문집
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• s.27
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• pp.183-200
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• 1997

We have calculated the energy of three distinct grain configurations, namely completely connected, partially connected and unconnected configurations, evolving during a spheroidization of polycrystalline thin film by extending a geometrical model due to Miller et al. to the case of spheroidization at both the surface and film-substrate interface. "Stabilitl" diagram defining a stable region of each grain configuration has been established in terms of the ratio of grain size to film thickness vs. equilibrium wetting or dihedral angles at various interface energy conditions. The occurrence of spheroidization at the film-substrate interface significantly enlarges the stable region of unconnected grain configuration thereby greatly facilitating the occurrence of agglomeration. Complete separation of grain boundary is increasingly difficult with a reduction of equilibrium wetting angle. The condition for the occurrence of agglomeration differs depending on the equilibrium wetting or dihedral angles. The agglomeration occurs, at low equilibrium angles, via partially connected configuration containing stable holes centered at grain boundary vertices, whereas it occurs directly via completely connected configuration at large equilibrium angles except for the case having small surface and/or film-substrate interface energy. The initiation condition of agglomeration is defined by the equilibrium boundary condition between the partially connected and unconnected configurations for the former case, whereas it can, for the latter case, largely deviate from the equilibrium boundary condition between the completely connected and unconnected configurations because of the presence of a finite energy barrier to overcome to reach the unconnected grain configuration.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.12
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• pp.755-760
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• 1999

Various fluoride films were investigated for a gate insulator of thin film transistor application. Conventional oxide containing materials like $SiO_2\;Ta_2O_5\; and \; Al_2O_3$ exhibited high interface states which lead to an increased threshold voltage and poor stability of TFT. In this paper, we investigated gate insulators using a binary matrix system of fluoride such as $CaF_2,\; SrF_2\; MgF_2,\; and\; BaF_2$. These materials exhibited an improvement in lattice mismatch, interface state and electrical stability. MIM and MIS devices were employed for an electrical characterization and structural property examination. Among the various fluoride materials, $CaF_2$ film showed an excellent lattice mismatch of 5%, breakdown electric field higher than 1.2MV/cm and leakage current density of $10^{-7}A/cm^2$. MIS diode having $Ca_2$ film as an insulation layer exhibited the interface states as low as $1.58\times10^{11}cm^{-2}eV^{-1}$. This paper probes a possibility of new gate insulator materials for TFT applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.882-885
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• 2004

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nanoscale components and Si-technology. In this study, molecular electronic devices were fabricated with amion style derivatives as redox-active component to compare to the devices using Zn-Porphyrin derivatives. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method, and then this LB monolayer is inserted between two metal electrodes. According to current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. Diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with the organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and the top Al electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.