Two-Dimensional Electron Gas (2DEG) at $Ta_2O_5/SrTiO_3$ Heterointerface

  • Joung, Jin Gwan (Electronic Materials Research center, Korea Institute of Science and Technology) ;
  • Yoo, Kwang Soo (Department of Materials Science and Engineering, University of Seoul) ;
  • Kim, Jin Sang (Electronic Materials Research center, Korea Institute of Science and Technology) ;
  • Baek, Seung-Hyub (Electronic Materials Research center, Korea Institute of Science and Technology)
  • Published : 2013.02.18

Abstract

Two-dimensional electron gas (2DEG) has been investigated at the heterointerface between two insulating dielectric perovskite oxides, $LaAlO_3$ (LAO)/$SrTiO_3$ (STO). Properties of the 2DEG have attracted an enormous interest in condensed matter physics due to multifunctional properties such as the coexistence of ferromagnetism and superconductivity, as well as the high electron mobility. Here, we have grown $Ta_2O_5$ thin films using pulsed laser deposition on $SrTiO_3$ substrate to investigate the electric properties of the $Ta_2O_5$/STO heterointerface. Our research reveal that the non-polar $Ta_2O_5$/$TiO_2$ heterointerface favors the formation of 2DEG similar to that at the LAO/STO heterointerface. The metallic behavior was found in this heterointerface with the current about $10{\sim}100{\mu}A$ at 5 V by using conventional I-V measurements, when the $Ta_20_5$ film thickness reaches over critical thickness, $d_c{\simeq}2uc$. The finding that electrons was localized at $Ta_2O_5$/STO heterointerface have attracted to be strong and new candidate for nanoscale oxide device applications.

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