• YAKHAK HOEJI
• /
• v.7 no.2_3
• /
• pp.42-50
• /
• 1963

The destruction rate of microorganisms by heat follows the first order reaction. In this experiments, the calculated sterilization velocity constants of Escherichia Coli are 1.97 * $10^{-2}min^{-1}.(45{\deg}$ C), 9.53 * $10^{-2}min^{-1}.(55{\deg}$ C) and $1.858min^{-1}.(70{\deg}$ C), 2.89 * $10^{-2}min^{-1}.(80{\deg}$ C), 1.32 * $10^{-1}min^{-1}.(90{\deg}$ C), 2.87 * $10^{-1}min^{-1}.(95{\deg}$ C), 7.91 * $10^{-1}min^{-1}.(100{\deg}$ C) and $1.777min^{-1}.(105{\deg}$ C). In the results, the activation energy of E. Coli is 62.0 Cal $mole^{-1}.(45{\deg}-60-{\deg})$, that of B. Subtilis are 17.8 Cal $mole^{-1}(60{\deg}-80{\deg}$ C) and 47.1 Cal $mole^{-1}(90{\deg}-105{\deg}$ C).

• Korean Journal of Applied Biomechanics
• /
• v.17 no.1
• /
• pp.145-153
• /
• 2007

The purpose of this study is to compare and analyze the phase-by-phase elapsed time, the COG, the body joint angle changes and the angular velocities of each phase of Handspring Salto Forward Piked performed by 4 college gymnasts through 3D movement analysis program. 1. The average elapsed time for each phase was .13sec for Phase 1, .18sec for Phase 2, .4sec for Phase 3, and .3sec for Phase 5. The elapsed time for Phase 1 to Phase 3 handspring was .35sec on average and the elapsed time for Phase 4 to Phase 5 handspring salto forward piked was .7sec on average. And so it showed that the whole elapsed time was 1.44sec. 2. The average horizontal changes of COG were 93.2 cm at E1, 138. 5 cm at E2, 215.7 cm at E3, 369.2 cm at E4, 450.7 cm at E5, and 553.1 cm at E6. The average vertical changes of COG were 83.1 cm at E1, 71.3 cm at E2, 78.9 cm at E3, 93.7 cm at E4, 150.8 cm at E5, and 97.2 cm at E6. 3. The average shoulder joint angles at each phase were 131.6 deg at E1, 153.5 deg at E2, 135.4 deg at E3, 113.4 deg at E4, 39.6 deg at E5, and 67.5 deg at E6. And the average hip joint angles at each phase were 82.2 deg at E1, 60 deg at E2, 101.9 deg at E3, 161.2 deg at E4, 97.7 deg at E5, and 167 deg at E6. 4. The average shoulder joint angular velocities at each phase were 130.9deg/s E1, 73.1 deg/s at E2, -133.9 deg/s at E3, -194.4 deg/s at E4, 29.4 deg/s at E5, and -50.1 deg/s at E6. And the average hip joint angular velocities at each phase were -154.7 deg/s E1, -96.5 deg/s at E2, 495.9 deg/s at E3, 281.5 deg/s at E4, 90.3 deg/s at E5, and 181.7 deg/s at E6. The results shows that, as for the performance of handspring salto forward piked, it is important to move in short time and horizontally from the hop step to the point to place the hands on the floor and jump, and to stretch the hip joints as much as possible after the displacement of the hands and to keep the hip joints stretched and high in the vertical position at the takeoff. And it is also important to bend the shoulder joints and the hip joints fast and spin as much as possible after the takeoff, and to decrease the speed of spinning by bending he shoulder joints and the hip joints quickly after the highest point of COG and make a stable landing.

• Journal of Crop Science and Biotechnology
• /
• v.10 no.4
• /
• pp.231-236
• /
• 2007

Differentially expressed genes(DEG) were identified in a rice variety, Sathi, an indica type showing high allelopathic potential against barnyardgrass(Echinochloa crus-galli(L.) Beauv. var. frumentaceae). Rice plants were grown with and without barnyardgrass and total RNA was extracted from rice leaves at 45 days after seeding. DEG full-screening was performed by $GeneFishing^{TM}$ method. The differentially expressed bands were re-amplified and sequenced, then analyzed by Basic Local Alignment Search Tool(BLAST) searching for homology sequence identification. Gel electrophoresis showed nine possible genes associated with allelopathic potential in Sathi, six genes(namely DEG-1, 4, 5, 7, 8, and 9) showed higher expression, and three genes(DEG-2, 3 and 6) showed lower expression as compared to the control. cDNA sequence analysis showed that DEG-7 and DEG-9 had the same sequence. From RT PCR results, DEG-6 and DEG-7 were considered as true DEG, whereas DEG-1, 2, 3, 4, 5, and 8 were considered as putative DEG. Results from blast-n and blast-x search suggested that DEG-1 is homologous to a gene for S-adenosylmethionine synthetase, DEG-2 is homologous to a chloroplast gene for ribulose 1,5-bisphosphate carboxylase large subunit, DEG-8 is homologous to oxysterol-binding protein with an 85.7% sequence similarity, DEG-5 is homologous to histone 2B protein with a 47.9% sequence similarity, DEG-6 is homologous to nicotineamine aminotransferase with a 33.1% sequence similarity, DEG-3 has 98.8% similarity with nucleotides sequence that has 33.1% similarity with oxygen evolving complex protein in photosystem II, DEG-7 is homologous to nucleotides sequence that may relate with putative serin/threonine protein kinase and putative transposable element, and DEG-4 has 98.8% similarity with nucleotides sequence for an unknown protein.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.168-168
• /
• 2010

InAs는 0.35eV의 낮은 밴드갭을 가지며 상온에서 약 $30,000cm^2/Vs$의 높은 전자이동도를 보여, GaAs/AlGaAs 및 InGaAs/InP 2DEG HEMT에 이은 차세대 초고속 전자소자의 2DEG용 물질로 각광을 받고 있다. 그러나 InAs의 격자상수는 약 0.61nm로 이에 적절한 반절연기판을 구할수 없어, GaAs상에 Al(Ga)Sb를 이용하여 성장하는 방법으로 2DEG을 실현하고 있다. 상기 방법으로 상온에서 ${\sim}30,000cm^2/Vs$ 전자이동도를 보이는 InAs/AlSb 2DEG HEMT 소자를 여러 연구팀에서 시현하였으나, 실제적으로 응용하기 위해서 etch-stop층 또는 contact층의 제작이 용이치 않아 실제의 회로구현에는 어려움을 격고 있다. 이에 InGaAs/InP 2DEG내에 InAs를 넣어 InAs 2DEG을 제작하는 방법이 NTT[1]에 의해 제안되어, SPINTRONICS등의 InAs 2DEG이 필요한 곳에 응용되고 있다. [2] 본 발표에서는 고품질의 InAs 2DEG을 실현하기 위해, 다양한 성장 변수 (온도, As 분압, 성장 시퀀스, InAs층의 두께등)와 2DEG의 전기적특성간의 관계를 발표한다. 최종적으로 상온전자이동도 ${\sim}12,000cm^2/Vs$의 InAs 2DEG을 제작할수 있었으며, 이를 다양한 전자소자에 차후 응용할 예정이다.

• Journal of Magnetics
• /
• v.10 no.2
• /
• pp.66-70
• /
• 2005

The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.9 no.4
• /
• pp.395-402
• /
• 1985

The apparent activation energy Q$_{c}$ and the applied stress exponent n have been determined during creep of Al 7075 alloy over the temperature range of 90.deg. C to 320.deg. C (0.4-0.65T$_{m}$) and stress range of 1.85 kgf/mm$^{2}$ to 21 kgf/mm$^{2}$, respectively in order to investigate the creep behavior. Constant load creep tests were carried out in the experiment. At round the temperature of 200.deg. C-240.deg. C and under the stress level 8.13-9.55kgf/mm$^{2}$ and again at around the temperature of 280.deg. C-320.deg. C and under the stress level of 1.85-2.55kgf/mm$^{2}$, the creep behavior obeyed for the creep deformation was nearly equal to that of the volume self diffusion of pure aluminum (34kcal/mole). But at around the temperature of 90.deg. C and under the stress level of 10-21kgf/mm$^{2}$, the creep behavior did not obey a simple power-law relation and the apparent activation enrgy, Q$_{c}$ was 26.01 kcal/mole. From the above facts, at around the temperature of 200.deg. C-240.deg. C and 280.deg. C-320.deg. C, the creep deformation for Al 7075 alloy seemed to be controlled by dislocation climb but at 90.deg. C, by cross slip over the range of experimental stress conditions.tions.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.6 no.2
• /
• pp.140-146
• /
• 1982

The purpose of this study is to investigate the free edge delamination of the laminated composites under uniaxial strain. The laminate is modeled as a set of anisotropic layers with isotropic adhesive layers. Interlaminar stresses are calculated for laminate with various laminate parameters by using two dimensional finite difference method. The redistribution of interlaminar stresses after delamination and the relation between delamination any ply failure are obtained for [.+-.45.deg.]$_{s}$, [0.deg./.+-./.+-.45.deg./90.deg.]$_{s}$ and [0.deg./45.deg./90.deg/45.deg.]$_{s}$ laminates. It was found that delamination can not propagate the entire width of the laminate under the static loading condition.ition.

• Electrical & Electronic Materials
• /
• v.4 no.4
• /
• pp.304-311
• /
• 1991

본 연구에서는 p형(100) 실리콘 기판 위에 LPCVD법으로 산화막과 다결정 실리콘을 증착하고 그 위에 Magnetron Sputtering법으로 티타늄을 500.angs.을 증착한 후, 열처리 온도 500-900.deg.C 사이에서 열처리 시간을 변화시키면서 N$_{2}$ 분위기 속에서 급속 열처리하여 티타늄 실리사이드를 형성하고 그 특성을 조사하였다. 500-600.deg.C 온도 범위에서 10초간 열처리한 시료에서는 실리사이드상은 나타나지 않고, 산소등의 불순물이 티타늄 박막 내로 확산되어 600.deg.C에서 면 저항이 최대값을 보였으며 열처리 온도는 675-750.deg.C로 높이자 TiSi상이 나타나면서 면저항이 감소되고 결정립의 크기가 크게 증가하였다. 또한 열처리온도 800.deg.C에서 나타나기 시작한 TiSi$_{2}$상은 열처리 온도 850.deg.C까지 TiSi상과 공존하면서 면저항과 reflectance는 계속 감소했다. 900.deg.C에서 10초간 열처리한 시료에서는 orthorhombic구조의 완전한 실리사이드 상만 나타났다. 최종적인 티타늄 실리사이드 박막의 두께는 1200.angs.이며 비저항은 18.mu..OMEGA.cm였다.

• Proceedings of the IEEK Conference
• /
• 1998.06a
• /
• pp.449-452
• /
• 1998

We have studied the oxidatio nrte of $Si_{1-x}Ge_{x}$ epitaxial layer grown by MBE(molecular beam epitaxy). Oxidation were performed at 700.deg. C, 800.deg. C, 900.deg. C, and 1000.deg. C. After the oxidation, the results of AES(auger electron spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $SiO_{2}/$Si_{1-x}Ge_{x}$ interface. It is shown that the presence of Ge at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700.deg. C and 800.deg.C, while it was decreased at both 900.deg. C and 1000.deg.C as the Ge mole fraction was increased. The ry oxidation rates were reduced for heavy Ge concentration, and large oxidation time. In the parabolic growth region of $Si_{1-x}Ge_{x}$ oxidation, The parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the 1000.deg.C, AES showed that Ge peak distribution at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface reduced by interdiffusion of silicon and germanium.

• Proceedings of the ESK Conference
• /
• 1997.10a
• /
• pp.23-30
• /
• 1997

근골격계 질환은 부적절한 작업 자세, 중량물의 무리한 취급, 과도한 작업 부하 등과 같은 작업 환경 에서 기인한다. 현장의 대부분의 공구사용작업에 있어서, 쪼그려앉아서 작업하는 경우가 매우 빈번하게 발생한다. 본 연구에서는 쪼그려 앉은자세에서 사용하는 공구를 설계하는데 필요 요소인 악력의 최대치 를 조사하는 것을 목적으로 한다. 23세-29세의 남자 8명을 피실험자로 실험하였다. 실험모델로는 쪼그려 앉기에서 1) 0 .deg. 외전된 어깨와 정위치의 손목에서 어깨 굴곡이 180 .deg. , 135 .deg., 90 .deg. 와 45 .deg. 의 조합된 자세에서의 악력, 2) 0 .deg. 외전된 어깨와 정위치의 손목에서 팔꿈치 굴곡이 135 .deg. , 90 .deg. 와 45 .deg. 조합된 자세에서의 악력을 조사하였다. 조사결과 쪼그려 앉은 자세에서 어깨굴곡이 45 .deg. 인 자세에서 최대의 악력이 발휘되는 것으로 나타났으며, 인체부위 중에서 손너비, 손목둘레, 팔길이, 손두께, 팔꿈치-손목까지의 길이 등이 쪼그려 앉은자세와 깊은 상관관계가 있는 것으로 나타났다.