• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.161-161
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• 2013

Two-dimensional electron gas (2DEG) has been investigated at the heterointerface between two insulating dielectric perovskite oxides, $LaAlO_3$ (LAO)/$SrTiO_3$ (STO). Properties of the 2DEG have attracted an enormous interest in condensed matter physics due to multifunctional properties such as the coexistence of ferromagnetism and superconductivity, as well as the high electron mobility. Here, we have grown $Ta_2O_5$ thin films using pulsed laser deposition on $SrTiO_3$ substrate to investigate the electric properties of the $Ta_2O_5$/STO heterointerface. Our research reveal that the non-polar $Ta_2O_5$/$TiO_2$ heterointerface favors the formation of 2DEG similar to that at the LAO/STO heterointerface. The metallic behavior was found in this heterointerface with the current about $10{\sim}100{\mu}A$ at 5 V by using conventional I-V measurements, when the $Ta_20_5$ film thickness reaches over critical thickness, $d_c{\simeq}2uc$. The finding that electrons was localized at $Ta_2O_5$/STO heterointerface have attracted to be strong and new candidate for nanoscale oxide device applications.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.28-32
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• 2023

Recently, the use of stable lithium nanostructures as substrates and electrodes for secondary batteries can be a fundamental alternative to the development of next-generation system semiconductor devices. However, lithium structures pose safety concerns by severely limiting battery life due to the growth of Li dendrites during rapid charge/discharge cycles. Also, enabling long cyclability of high-voltage oxide cathodes is a persistent challenge for all-solid-state batteries, largely because of their poor interfacial stabilities against oxide solid electrolytes. For the development of next-generation system semiconductor devices, solid electrolyte nanostructures, which are used in high-density micro-energy storage devices and avoid the instability of liquid electrolytes, can be promising alternatives for next-generation batteries. Nevertheless, poor lithium ion conductivity and structural defects at room temperature have been pointed out as limitations. In this study, a low-dimensional Graphene Oxide (GO) structure was applied to demonstrate stable operation characteristics based on Li+ ion conductivity and excellent electrochemical performance. The low-dimensional structure of GO-based solid electrolytes can provide an important strategy for stable scalable solid-state power system semiconductor applications at room temperature. The device using uncoated bare NCA delivers a low capacity of 89 mA h g-1, while the cell using GO-coated NCA delivers a high capacity of 158 mA h g−1 and a low polarization. A full Li GO-based device was fabricated to demonstrate the practicality of the modified Li structure using the Li-GO heterointerface. This study promises that the lowdimensional structure of Li-GO can be an effective approach for the stabilization of solid-state power system semiconductor architectures.