• Journal of the Korean Applied Science and Technology
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• v.15 no.3
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• pp.85-90
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• 1998

In this study, organic electroluminescent devices(OELD) with a structure of a glass $substrate/ITO/TPD/Tb(ACAC)_3(Phen-Cl)/Alq_3/Al$ was fabricated by vacuum evaporation method, where Tb complex was known to have green light emitting property. Electroluminescent(EL) and I-V characteristics of this structure were investigated. This triple-layer structure shows the green EL spectrum at the wavelwngth of 546nm, which is almost the same as the PL spectrum of $Pb(ACAC)_3(Phen_Cl)$. It was found in current-voltage(I-V) characteristics of the devices that the operating voltage was about 12V.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.436-437
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• 2008

Flexible CIGS thin film solar cell was fabricated using STS430 plate as a flexible substrate in this work. A diffusion barrier layer of $SiO_2$ thin film was deposited on STS430 substrate by PECVD followed by deposition of double layered Mo back contact. After depositing CIGS absorber layer by co-evaporation, CdS buffer layer by chemical bath deposition, ZnO window layer by RF sputtering and Al electrode by thermal evaporation, the solar cell fabrication processes were completed and its performance was evaluated. Corresponding solar cell showed an conversion efficiency of 8.35 % with $V_{OC}$ of 0.52 V, $J_{SC}$ of 26.06 mA/$cm^2$ and FF of 0.61.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.1023-1025
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• 1998

This paper presents the fabrication of a micro pump consisting of a pair of Al f1ap wave and a phase change actuator. The phase change actuator is composed of a heater, a silicone rubber diaphragm and a working liquid chamber. The diaphragm is actuated by the evaporation and the condensation of the working liquid. The actuator pumps fluid through the valves. The micro pump is fabricated by the anisotropic etch, the boron deposition and the metal evaporation. The forward and the backward flow characteristics of the f1ap valves were obtained. Also, the flow rate of the micro pump has been measured. When the square wave input of 12 V, 60% duty ratio and 0.2 Hz is applied, the average flow rate is $0.15{\mu}{\ell}/sec$ for zero pressure difference.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1275-1276
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• 2008

In this study, a micro-cavity organic light-emittingdevice (OLED) with semi-transparent-Ag/AgO hole injecting layer (HIL) was fabricated and their performance was investigated. For the fabrication of OLEDs N,N-diphenyl-N,N-(3-methyphenyl)-1,1-biphenyl-4-4-diamine (TPD), known as a hole transporting material and tris (8-hydroxyquinolinato)-aluminum ($Alq_3$) as both electron-transporting layer (ETL) and emission layer (EML) were deposited using thermal evaporation technique. And Al layer as cathode was then deposited using thermal evaporation technique. Effects of the semi-transparent-Ag/AgO layers on the resulting OLED performance were investigated.

• Journal of Powder Materials
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• v.14 no.6
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• pp.391-398
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• 2007

The surface roughness of Al, Ag and Ni nano-powders which were prepared by pulsed wire evaporation method was quantified based upon the fractal theory. The surface fractal dimensions of metal nano-powders were determined from the linear relationship between In $V/V_{mono}$ and Inln ($P^o/P$) using multi-layer gas adsorption theory. Moreover, the fractal surface image was realized by computer simulation. The relationship between preparation condition and surface characteristics of metal nano-powders was discussed in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.169-172
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• 2005

공정시 플라스틱 기판의 변형을 방지하기 위해 PC(Polycarbonate) 기판을 약 12시간 동안 pre-annealing시킨 다음 SiN(silicon nitride)와 PI(Poly-imide)를 각각 Sputter와 Spin-Coater를 이용하여 Coating하였다. 완성된 PC 기판위에 Themal Evaporation으로 Calsium을 증착한 뒤 Al을 올렸다. Calsium 증착 된면에 삼성 코닝의 글래스를 UV resin으로 부착 시킨 다음 상온에서 투습률을 측정하였다. 측정 간격은 12시간으로 하였으며 Calsium Test 의 정확도 향상을 위해 CCD Camera로 측정하여 컴퓨터로 분석하였다. 그래픽 저장 파일은 저장시 이미지 손실을 방지하기 위해 Bitmap방식을 그대로 사용 하였으며 정확도 향상을 위한 분석 프로그램은 MicroSoft 사의 Visual C++로 작성하였다. 화상 처리 면적은 컴퓨터 시스템의 처리 속도를 감안하여 70*70 으로 하였다.

• Applied Microscopy
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• v.29 no.1
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• pp.75-81
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• 1999

Optimum conditions for making the Au and Al internal standards for TEM have been determined experimentally. The Au internal standard was produced by sputter coating at 9mA for 100 seconds in low vacuum $(\leq1\times10^{-3})$. The Al internal standard was produced by evaporation coating at 7kV for 10 minutes in high vacuum $(\leq1\times10^{-5})$. Measurements of the lattice parameters of andalusite and albite feldspars with this Au internal standard resulted in errors of (a) $ \leq1.2%$ in precion and $\leq0.3%$ in accuracy for andalusite: (b) $\leq0.5%$ in precision and $\leq1.1%$ in accuracy for albite feldspars. The most significant error occurred from the measuring processes of distances and angles of electron diffraction patterns. By employing systematic procedures of measurement with high precision devices, this lattice parameter determination method utilizing the internal standard should be a good alternative to the conventional powder XRD method or the sophisticated CBED method for special samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.158-161
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• 2004

We have studied a lifetime in organic light-emitting diodes depending on buffer layer. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. And the cathode for electron injection was LiAl. Phthalocyanine Copper(CuPc), Poly(3,4-ethylenedioxythiophene):poly (PEDOT:PSS), or poly (9-vinylcarbazole)(PVK) material was used as a buffer layer. A thermal evaporation was performed to make a thickness of 40nm of TPD layer at a rate of $0.5{\sim}1\;{\AA}/s$ at a base pressure of $5{\times}10^{-6}\;torr$. A material of tris(8-hydroxyquinolinate) Aluminum($Alq_3$) was used as an electron transport and emissive layer. A thermal evaporation of $Alq_3$ was done at a deposition rate of $0.7{\sim}0.8[{\AA}/s]$ at a base pressure of $5{\times}10^{-6}\;torr$. By varying the buffer material, hole injection at the interface could be controlled because of the change in work function. Devices with CuPc and PEDOT:PSS buffer layer are superior to the other PVK buffer layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.665-668
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• 2008

Multi-layered thin films of $Fe_2O_3/Na_3AlF_6/Fe_2O_3/Cu$, Cr, Al were deposited on glass substrate by evaporation process. As high and low refractive index material, $Fe_2O_3$ and $Na_3AlF_6$ were selected and additionally Cu, Al and Cr were chosen as mid reflective layer respectively. Optical properties including reflectance were systematically studied depending on optical thickness of $Na_3AlF_6$ especially $0.25{\lambda}$ and $0.5{\lambda}$. In order to expect the experimental result, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. Based on the results taken by spectrophotometer at viewing angle $45^{\circ}C$, the $Fe_2O_3/Na_3AlF_6/Fe_2O_3/Cu$ show the colour rage between red and orange in $0.25{\lambda}$ and green and pupple in $0.5{\lambda}$ respectively. When the Al was used as mid reflective layers in $Fe_2O_3/Na_3AlF_6/Fe_2O_3$ system, typical yellow colour and mixed colour between green and pupple were appeared in $0.25{\lambda}$ and $0.5{\lambda}$ of $Na_3AlF_6$ respectively. As compared the experimental result to simulation data, it was found out that the experimental data is relatively well matched with the EMP simulation data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.717-723
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• 2009

Ni/Al ('/' denotes deposition sequence) contacts were deposited on Al-implanted 4H-SiC for ohmic contact formation, and the conduction properties were characterized and compared with those of Ni-only contacts. The thicknesses of the Ni and Al thin film were 30 nm and 300 nm, respectively, and the films were sequentially deposited bye-beam evaporation without vacuum breaking. Rapid thermal anneal (RTA) temperature was varied as follows : $840^{\circ}C$, $890^{\circ}C$, and $940^{\circ}C$. The specific contact resistivity of the Ni contact was about $^{\sim}2\;{\pm}\;10^{-2}\;{\Omega}{\cdot}cm^2$, However, with the addition of Al overlayer, the specific contact resistivity decreased to about $^{\sim}2\;{\pm}\;10^{-4}\;{\Omega}{\cdot}cm^2$, almost irrespective of RTA temperature. X-ray diffraction (XRD) analysis of the Ni contact confirmed the existence of various Ni silicide phases, while the results of Ni/Al contact samples revealed that Al-contaning phases such as $Al_3Ni$, $Al_3Ni_2$, $Al_4Ni_3$, and $Ab_{3.21}Si_{0.47}$ were additionally formed as well as the Ni silicide phases. Energy dispersive spectroscopy (EDS) spectrum showed interfacial reaction zone mainly consisting of Al and Si at the contact interface, and it was also shown that considerable amounts of Si and C have diffused toward the surface. This indicates that contact resistance lowering of the Ni/Al contacts is related with the formation of the formation of interfacial reaction zone containing Al and Si. From these results, possible mechanisms of contact resistance lowering by the addition of Al were discussed.