• 한국진공학회지
• /
• 제2권4호
• /
• pp.424-432
• /
• 1993

AlGaAs/InGaAs/GaAs pseudomorphic structures have been grown by atmosheric pressure-MOCVD . The Al incorporation efficiency is constant but slightly exceeds the Ga incorporation during the growth of AlGaAs layers at $650^{\circ}C$ . Meanwhile , the In incorporation efficiency is constant but slightly less than the Ga incorporation in InGAAs layers. InGaAs/GaAs QWs were grown and their optical properties were characterized . $\delta$-doped Al0.24Ga0.76As/In0.16 Ga0.84As p-HEMT structures were successfully grown by MOCVD and their transport properties were characterized by Hall effect and SdH measurements. SdH Measurements at 3.7K show clear magnetoresistance oscillations and plateaus in the quantum Hall effect confirming the existence of a two-dimensional electron gas(2DEG) and a parallel conduction through the GaAs buffer layer. The fabricated $1.5\mu\textrm{m}$gatelength p-HEMTs having p-type GaAs in the buffer layer show a high transconductance of 200 mS/mm and a good pinch-off characteristics.

• 한국분말재료학회지
• /
• 제20권5호
• /
• pp.376-381
• /
• 2013

Spherical Ti-6Al-4V powders in the size range of 250 and 300 ${\mu}m$ were uniformly doped with nano-sized hydroxyapatite (HAp) powders by Spex milling process. A single pulse of 0.75-2.0 kJ/0.7 g of the Ti-6Al-4V powders doped with HAp from 300 mF capacitor was applied to produce fully porous and porous-surfaced Ti-6Al-4V implant compact by electro-discharge-sintering (EDS). The solid core was automatically formed in the center of the compact after discharge and porous layer consisted of particles connected in three dimensions by necks. The solid core increased with an increase in input energy. The compressive yield strength was in a range of 41 to 215 MPa and significantly depended on input energy. X-ray photoelectron spectroscopy and energy dispersive x-ray spectrometer were used to investigate the surface characteristics of the Ti-6Al-4V compact. Ti and O were the main constituents, with smaller amount of Ca and P. It was thus concluded that the porous-surfaced Ti-6Al-4V implant compacts doped with HAp can be efficiently produced by manipulating the milling and electro-discharge-sintering processes.

• Advances in Energy Research
• /
• 제4권4호
• /
• pp.275-284
• /
• 2016

In the present work, ZnO nanoparticles (NPs) have been dispersed alone in the same solvent of the active layer for improving performance parameters of the organic solar cells. Different concentrations of the ZnO NPs have been blended inside active layer of the solar cell based on poly(3-hexylthiophene) (P3HT), which forms the hole-transport network, and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), which forms the electron-transport network. In the present investigations, the ZnO NPs may represent an efficient tool for improving light harvesting through light scattering inside active layer, electron mobility, and electron acceptance strength which tend to improve photocurrent and performance parameters of the investigated solar cell. The fill factor (FF) of the ZnO-doped solar cell increases nearly 14% compared to the non-doped solar cell when the doping is 50%. The present investigations show that ZnO NPs improve power conversion efficiency of the solar cell from 1.23% to 1.64% with increment around 25% that takes place after incorporation of 40% as a volume ratio of the ZnO NPs inside P3HT:PCBM active layer.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1999년도 추계종합학술대회 논문집
• /
• pp.295-298
• /
• 1999

AlGaAs/InGaAs power P-HEMTS (Pseudo-morphic High Electron Mobility Transistors) with 1.0-${\mu}{\textrm}{m}$ gate length for PCS applications have been fabricated. We adopted single heterojunction P-HEMT structure with two Si-delta doped layer to obtain higher current density. It exhibits a maximum current density of 512㎃/mm, an extrinsic transconductance of 259mS/mm, and a gate to drain breakdown voltage of 12.0V, respectively. The device exhibits a power density of 657㎽/mm, a maximum power added efficiency of 42.1%, a linear power gain of 9.85㏈ respectively at a drain bias of 6.0V, gate bias of 0.6V and an operation frequency of 1.765㎓.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.55-56
• /
• 2005

The properties of phosphorus doped ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated depending on various deposition conditions. The phosphorus (P) doped ZnO target was composed of ZnO + x wt% Al (x=1, 3, 5). The structural, electrical and optical properties of the ZnO thin films were measured by X-ray diffraction (XRD), Hall measurements and photoluminescence (PL). As the deposition temperature optimized, the electrical properties of the phosphorus doped ZnO (ZnO:P) layer showed a electron concentration of $7.76\times10^{16}/cm^3$, a mobility of 10.225 $cm^2/Vs$, a resistivity of 7.932 $\Omega$cm. It was observed the electrical property of the film was changed by dopant activation effect as target variations and deposition conditions.

• 한국재료학회지
• /
• 제21권6호
• /
• pp.341-346
• /
• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 1988년도 한국자동제어학술회의논문집(국내학술편); 한국전력공사연수원, 서울; 21-22 Oct. 1988
• /
• pp.620-626
• /
• 1988

GaAs solar cells may be the most attractive and efficient power source of a satellite. GaAs is more radiation tolerant and less temperature sensitive than widely used silicon. $Al_{x}$ Ga$_{1-x}$ As/GaAs solar cells have been designed and fabricated by Liquid Phase Epitaxial method. GaAs solar cells, of which structure is about 0.2 .mu.m p$^{+}$ - window layer, 0.6-1.O .mu.m Ge-doped p-layer. 3.mu.m n-GaAs layer and n$^{+}$ - buffer layer, have been characterized as a function of operating temperature from 25 .deg.C to 130 .deg.C. Open circuit voltage decreases linearly with increasing temperature by 1.4-1.51 mV/ .deg.C while degradation of silicon solar cells is about 2.2-2.5 mV/ .deg.C, short circuit current does not increase much with increasing temperature. Relative efficiency decreases with increasing of temperature by about 0.21-0.29 %/ .deg.C. Efficiency degradation of silicon solar cells with temperature is known to be about 0.5%/ .deg.C and our results show GaAs solar cells may be an excellent candidate for concentrated solar cells.ells.

• Nuclear Engineering and Technology
• /
• 제53권12호
• /
• pp.4106-4113
• /
• 2021

Rare earth doped barium tellurite glasses were synthesised and explored for their radiation shielding applications. All the samples showed good thermal stability with values varying between 101 ℃ and 135 ℃ based on dopants. Structural properties showed the dominance of matrix elements compared to rare earth dopants in forming the bridging and non-bridging atoms in the network. Bandgap values varied between 3.30 and 4.05 eV which was found to be monotonic with respective rare earth dopants indicating their modification effect in the network. Various radiation shielding parameters like linear attenuation coefficient, mean free path and half value layer were calculated and each showed the effect of doping. For all samples, LAC values decreased with increase in energy and is attributed to photoelectric mechanism. Thulium doped glasses showed the highest value of 1.18 cm^-1 at 0.245 MeV for 2 mol.% doping, which decreased in the order of erbium, holmium and the base barium tellurite glass, while half value layer and mean free paths showed an opposite trend with least value for 2 mol.% thulium indicating that thulium doped samples are better attenuators compared to undoped and other rare earth doped samples. Studies indicate an increased level of thulium doping in barium tellurite glasses can lead to efficient shielding materials for high energy radiation.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.406-406
• /
• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• Korean Chemical Engineering Research
• /
• 제48권5호
• /
• pp.654-659
• /
• 2010

박막형 유기 태양전지의 효율 향상을 위하여 정공 수송층인 CuPc 층에 p형 유기 반도체인 rubrene을 함량 별로 도핑하여 ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al의 이종접합구조를 가지는 p-i-n형 유기 박막형 태양전지 소자를 제조한 후, 유기 태양전지의 전류 밀도-전압(J-V) 특성, 단락 전류($J_{sc}$), 개방 전압($V_{oc}$), 충진 인자(fill factor:FF), 에너지 전환 효율(${\eta}_e$) 등을 측정하고 계산하여 성능 평가를 수행 하였다. 정공 수송층으로 사용된 CuPc 층에 rubrene을 도핑함으로써 에너지 흡수 스펙트럼에서 흡수 강도가 감소하였다. 그러나 CuPc 보다 큰 밴드갭을 가지며 높은 정공 이동도를 가지는 결정성 rubrene의 도핑에 의해 제조된 p-i-n형 유기 박막 태양전지의 성능은 향상 되는 것으로 확인되었다. 제조된 유기 태양전지의 에너지 전환 효율(${\eta}_e$)은 1.41%로 실리콘 태양전지와 비교해서 아직도 성능 향상을 위한 많은 노력이 필요함을 보여 준다.