• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.118-118
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• 2000

New single-source precursor, [AlCI3:NH2tBu] was synthesized for AlN thin f film processing with AICI3 (Aluminum Chloride) and tBuNH2 (tert-butylamine). AlN thin films for packaging aspplication were deposited on sapphire substrate by a atmosph하ie-pressure MOCVD. In most of other study methyl-based AI precursors w were used for source, But herein Aluminum Chloride was used for as AI source i in order to prevent the carbon contamination in the films and stabilize the p precursor. New precursor showed the very high gas vapor pressure so it allowed to m make the film under atmospheric-pressure and get the high purified film. High q quality AlN thin film was obtained at 700 to $900^{\circ}C$. The new precursor was p purified by a sublimation technique and help to fabricate high purity film. It s showed high vapor pressure, which is able to a critieal factor for the high purity a and atmospheric CVD of AlN. High Quality AIN thin film was obtained at $700-900^{\circ}C$. The AIN film was characterized by RBS

• Journal of the Korean Magnetics Society
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• v.14 no.2
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• pp.59-64
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• 2004

We investigated the soft magnetic properties of nanocrystalline Fe-Al-O film as etching the oxide film with ion beam etching method. It is thought that the grain size of Fe-Al-O film increases as the thickness decreases. The coercivity and squareness increase with decreasing thickness. The surface curvature of Am images increases when the etching experiment proceeds. This phenomena could be due to the grain growth which occurs during sputtering. This grain growth could be assisted by the the plasma energy during sputtering. Therefore proper thickness should be searched to acquire the good soft magnetic properties for the nanocrystalline film material. Good soft magnetic properties of Fe-Al-O film was acquired at the thickness of more than 900 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.40-40
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• 2010

Structural, electrical, and optical properties of atomic layer-controlled AI-doped ZnO (ZnO:Al) films grown on glass by atomic layer deposition (ALD) were characterized with various $Al_2O_3$ film contents for use as transparent electrodes. Unlike films made using sputtering methods, the diffraction peak position of the films grown by ALD based on alternate self-limiting surface chemical reactions moved progressively to a wider angle (red shift) with increasing $Al_2O_3$ film content, which seems to be evidence of Zn substitution in the film by layer-by-layer growth. By adjusting the $Al_2O_3$ film content, the electrical resistivity of ZnO:Al film with the $Al_2O_3$ film content of 2.96% reached the lowest electrical resistivity of $9.80{\times}10^{-4}\Omega{\cdot}cm$, in which the carrier mobility, carrier concentration, and optical transmittance were $11.20\;cm^2V^{-1}s^{-1}$, $5.69{\times}10^{20}\;cm^{-3}$, and 94.23%, respectively. Moreover, the estimated figure of merit value for the transparent conductive oxide applications from our best sample was $7.7\;m{\Omega}^{-1}$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.53-60
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• 2014

Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.491-496
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• 2011

Al-doped ZnO film on glass substrate is deposited by ALD in low temperature, using 4-step process (DEZ-$H_2O$-TMA-$H_2O$). To find out the optimal film condition for TCO material, we fabricate Al-doped ZnO films by increasing Al doping concentration at $100^{\circ}C$, so that the Al-doped film of 5 at% shows the lowest resistivity ($1.057{\times}10^{-2}{\Omega}{\cdot}cm$) and the largest grain size (38.047 nm). Afterwards, the electrical and physical characteristics in Al-doped films of 5 at% are also compared in accordance with increasing deposition temperature. All the films show the optical transmittance over 80% and the film deposited at $250^{\circ}C$ demonstrates the superior resistivity ($1.237{\times}10^{-4}{\Omega}{\cdot}cm$).

• Korean Journal of Materials Research
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• v.24 no.5
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• pp.259-265
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• 2014

$ZrO_2$ films were coated on aluminum etching foil by the sol-gel method to apply $ZrO_2$ as a dielectric material in an aluminum(Al) electrolytic capacitor. $ZrO_2$ films annealed above $450^{\circ}C$ appeared to have a tetragonal structure. The withdrawal speed during dip-coating, and the annealing temperature, influenced crack-growth in the films. The $ZrO_2$ films annealed at $500^{\circ}C$ exhibited a dielectric constant of 33 at 1 kHz. Also, uniform $ZrO_2$ tunnels formed in Al etch-pits $1{\mu}m$ in diameter. However, $ZrO_2$ film of 100-200 nm thickness showed the withstanding voltage of 15 V, which was unsuitable for a high-voltage capacitor. In order to improve the withstanding voltage, $ZrO_2$-coated Al etching foils were anodized at 300 V. After being anodized, the $Al_2O_3$ film grew in the directions of both the Al-metal matrix and the $ZrO_2$ film, and the $ZrO_2$-coated Al foil showed a withstanding voltage of 300 V. However, the capacitance of the $ZrO_2$-coated Al foil exhibited only a small increase because the thickness of the $Al_2O_3$ film was 4-5 times thicker than that of $ZrO_2$ film.

• Bulletin of the Korean Chemical Society
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• v.24 no.11
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• pp.1659-1663
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• 2003

$Al_2O_3$ thin films were grown on H-terminated Si(001) substrates using dimethylaluminum isopropoxide [DMAl: $(CH_3)_2AlOCH(CH_3)_2$], as a new Al precursor, and water by atomic layer deposition (ALD). The selflimiting ALD process by alternate surface reactions of DMAI and $H_2O$ was confirmed from measured thicknesses of the aluminum oxide films as functions of the DMAI pulse time and the number of DMAI-$H_2O$ cycles. Under optimal reaction conditions, a growth rate of ~1.06 ${\AA}$ per ALD cycle was achieved at the substrate temperature of $150\;^{\circ}C$. From a mass spectrometric study of the DMAI-$D_2O$ ALD process, it was determined that the overall binary reaction for the deposition of $Al_2O_3\;[2\;(CH_3)_2AlOCH(CH_3)_2\;+\;3\;H_2O\;{\rightarrow}\;Al_2O_3\;+\;4\;CH_4\;+\;2\;HOCH(CH_3)_2]$can be separated into the following two half-reactions: where the asterisks designate the surface species. Growth of stoichiometric $Al_2O_3$ thin films with carbon incorporation less than 1.5 atomic % was confirmed by depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat and uniform surfaces. X-ray photoelectron spectroscopy and cross-sectional high resolution transmission electron microscopy of an $Al_2O_3$ film indicate that there is no distinguishable interfacial Si oxide layer except that a very thin layer of aluminum silicate may have been formed between the $Al_2O_3$ film and the Si substrate. C-V measurements of an $Al_2O_3$ film showed capacitance values comparable to previously reported values.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.207-215
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• 1997

Aluminum (Al) thin films were deposited on the Si(100) and TiN(60 nm)/Si (100) substrate by the ionized cluster beam deposition (ICBD) method. The characteristics of thin films were examined by the $\alpha$-step, four-point-probe, Scanning Electron Spectroscopy (SEM), Auger Electron Spectroscopy (AES). The growth rate of the Al thin film increased and the resistivity decreased as the crucible temperature increased. At the crucible temperature $1800^{\circ}C$, the microstructure of Al thin film deposited was smooth and continuous the resistivity decreased as the acceleration voltage increased. Also, the minimum resistivity in Si(100) substrate and TiN(60 nm)/Si(100) substrate were 3.4 $\mu \Omega \textrm {cm}$, 3.6 $\mu \Omega \textrm {cm}$ at the acceleration voltage 4 kV and 2 kV respectively. From the AES spectrumt 14 wasn't detected any impurities In the Al thin film. Therefore the resistivity of Al thin film was affected by the microstructure of film.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.344-349
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• 2014

$RuO_2$-based high frequency thick-film resistor paste was printed at the speed of 10, 100, 300 mm/sec on the AlN substrate, and then sintered at between 750 and $900^{\circ}C$. The sintered thick films were characterized in terms of printing and sintering conditions. With increasing printing speed, the thickness and roughness of sintered film increased. The resistance of the thick film resistor was reduced by increasing the printing speed from 10 to 100 mm/sec, but did not significantly change at 300 mm/sec speed. With increasing sintering temperature, the surface roughness and thickness of sintered resistor film decreased. The reduction rate was large in case of fast printed resistor. The resistance of the resistor increased up to $800^{\circ}C$ with sintering temperature, but again decreased at the higher sintering temperature.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.39-44
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• 2003

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.