• Title/Summary/Keyword: Ag-doped

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Electrical Properties of a High Tc Superconductor for Renewed Electric Power Energy

  • Lee Sang-Heon
    • Journal of Electrical Engineering and Technology
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    • v.1 no.3
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    • pp.371-375
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    • 2006
  • Effects of $Ag_2O$ doping on the electromagnetic properties in the BiSrCaCuO superconductor. The electromagnetic properties of doped and undoped $Ag_2O$ in the BiSrCaCuO superconductor were evaluated to investigate the contribution of the pinning centers. It was confirmed experimentally that a larger amount of magnetic flux was trapped in the $Ag_2O$ doped sample than in the undoped one, indicating that the pinning centers of magnetic flux are related closely to the occurrence of the magnetic effect. We have fabricated superconductor ceramics by the chemical process. A high Tc superconductor with a nominal composition of $Bi_2Sr_2Ca_2Cu_3O_y$ was prepared by the organic metal salts method. Experimental results suggest that the intermediate phase formed before the formation of the superconductor phase may be the most important factor. The relation between electromagnetic properties of Bi HTS and the external applied magnetic field was studied. The electrical resistance of the superconductor was increased by the application of the external magnetic field. But the increase in the electrical resistance continues even after the removal of the magnetic field. The reason is as follows; the magnetic flux due to the external magnetic field penetrates through the superconductor and the penetrated magnetic flux is trapped after the removal of the magnetic flux. During the sintering, doped $Ag_2O$ was converted to Ag particles that were finely dispersed in superconductor samples. It is considered that the area where normal conduction takes place increases by adding $Ag_2O$ and the magnetic flux penetrating through the sample increases. The results suggested that $Ag_2O$ acts to amplify pinning centers of magnetic flux, contributing to the occurrence of the electromagnetic properties.

Piezoelectric Properties of Ag2O-doped 0.98(Na0.5K0.5)NbO3-0.02Li(Sb0.17Ta0.83)O3 Ceramics (Ag2O 첨가에 따른 0.98(Na0.5K0.5)NbO3-0.02Li(Sb0.17Ta0.83)O3 세라믹스의 압전특성)

  • Kim, Hyun-Ju;Lee, Seung-Hwan;Lee, Sung-Gap;Lee, Young-Hie
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.1
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    • pp.29-32
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    • 2012
  • Lead-free $0.98(Na_{0.5},K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ti_{0.83})O_3$ (hereafter 0.98NKN-0.02LST) ceramics doped with $Ag_2O$ were prepared using a conventional mixed oxide method. The specimen showed superior structural and electrical properties when 1 mol% $Ag_2O$ was doped. For the 0.98NKN-0.02LST+1.0mol%$Ag_2O$ ceramics sintered at $1,100^{\circ}C$, piezoelectric constant ($d_{33}$) of sample showed the optimum values of 207 pC/N. The 0.98NKN-0.02LST+1.0 mol%$Ag_2O$ ceramics are a promising candidate for lead-free piezoelectric materials.

Electrolyte Mechanizm Study of Amorphous Ge-Se Materials for Memory Application (Ge-Se의 스위칭 특성 향상을 위한 Sb-doping에 관한 연구)

  • Nam, Ki-Hyun;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.69-69
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    • 2009
  • In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sh-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sh-doped Ge-Se-Te thin films.

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Morphology Control of Ag-doped ZnO Nanowires by Hot-walled pulse Laser Deposition

  • Kim, Gyeong-Won;Song, Yong-Won;Kim, Sang-Sik;Lee, Sang-Ryeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.25-26
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    • 2009
  • We design and demonstrate the controlled morphologies of Ag-dpped ZnO nanowires (NWs) adopting self-contrived hot-walled pulsed laser deposition (HW-PLD). p-type Ag-doping is ensuired by low temperature photoluminescence (PL) spectrum to find the AoX peak at 3.349 eV. Morphology of grown NWs are controlled by changing the kinetic energy and flux of the ablated particles with adjusting the target - substrate (T-S) distance. The analysis on the resultant NWs is presented.

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K and Cs Doped Ag/Al2O3 Catalyst for Selective Catalytic Reduction of NOx by Methane

  • Rao, Komateedi N.;Yu, Chang-Yong;Lack, Choi-Hee;Ha, Heon-Phil
    • Journal of Powder Materials
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    • v.18 no.6
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    • pp.510-516
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    • 2011
  • In the present study, potassium and caesium doped Ag/$Al_2O_3$ catalysts were synthesized by simple wet impregnation method and evaluated for selective catalytic reduction (SCR) of NOx using methane. TEM analysis and diffraction patterns demonstrated the finely dispersed Ag particles. BET surface measurements reveal that the prepared materials have moderate to high surface area and the metal amount found from ICP analysis was well matching with the theoretical loadings. The synthesized K-Ag/$Al_2O_3$ and Cs-Ag/$Al_2O_3$ catalysts exhibited a promotional effect on deNOx activity in the presence of $SO_2$ and $H_2O$. The long-term isothermal studies at $550^{\circ}C$ under oxygen rich condition showed the superior catalytic properties of the both alkali promoted samples. The crucial catalytic properties of materials are attributed to NO adsorption properties detected by the NO TPD.

Electrical, optical, structural properties of GZO-Ag-GZO multilayer electrode (GZO-Ag-GZO 다층 투명 전극의 전기적, 광학적, 구조적 특성 연구)

  • Kim, Han-Ki;Park, Ho-Kyun;Choi, Kwang-Hyuk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.443-443
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    • 2008
  • 본 연구에서는 Ga-doped ZnO(GZO)-Ag-GZO 다층 투명전극을 Dual DC magnetron sputtering system을 이용 하여 유리기판 위에 상온에서 제작하여 Ag 두께에 따른 전기적, 광학적, 구조적 특성변화를 조사하였다. Hall effect measurement와 UV/Vis spectrometer로 전기적, 광학적 특성을 분석하였으며, X-ray diffraction(XRD)와FE-SEM분석을 통해 결정성과 표면 특성을 조사하였다. FE-SEM 분석결과 island 형태에서 continuous layer로 박막의 형상이 바뀌면서 다층 투명전극의 전기적, 광학적 특성에 영향을 미치는 것을 알 수 있었다. 본 실험에서 Ag 두께 12 nm에서 가장 최적화되어 유리기판위에 상온에서 증착되었음에도 불구하고 $5.5{\times}{\times}10^{-5}\Omega$-cm, $6\Omega$/sq. 의 매우 낮은 면저항과 비저항을 각각 나타내었고 550 nm 파장에서 87 % 의 높은 광 투과도를 나타내었다. 또한 두께 12 nm의 Ag가 삽입된 다층 투명전극을 polyethylene terephthalate (PET) 기판위에 성막하여 Bending test를 실시하여 0.1% 이하의 매우 낮은 저항변화를 확인함으로써 플렉시블 기반의 디스플레이나 태양전지의 투명 전극으로서의 응용 가능성을 확인하였고 마지막으로 최적화된 다층 투명전극을 유기물태양전지의 애노드에 적용하여 기존 ITO 애노드를 대체할 수 있는 투명전극으로서의 가능성을 제시하였다.

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The Electrochemical Properties on the Silver Doped Vanadium Oxide Xerogel (미량의 은이 첨가된 바나듐산화물 전극)

  • Park Heai-Ku;Kim, Gun-Tae;Lee, Man-Ho
    • Journal of the Korean Electrochemical Society
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    • v.5 no.1
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    • pp.1-6
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    • 2002
  • Silver doped vanadium pentoxides with a doping ratio Ag/V ranging from 0.03 to 0.11 were synthesized by sol-gel process, and $Li/Ag_xV_2O_5$ cell was investigated by the electrochemical methods. It appears to be amorphous layered material and entangled fibrous textures has been grown to form anisotropic corrugated fibrils. NMR measurements revealed that several different kinds of $Li^+$ ions exist in the lithium intercalated xerogel electrodes and the average cell potential was about 3.0V vs. $Li/Li^+$. The cell capacity of the silver doped $Ag_xV_2O_5$ xerogel cathodes was more than 359 mAh/g at discharge current 10mA/g and cycle efficiency $94\%$ was achieved.

Magnetic Properties of Chip Inductors Prepared with V2O5-doped Ferrite Pastes (V2O5 도핑한 페라이트 페이스트로 제조된 칩인덕터의 자기적 특성)

  • Je, Hae-June
    • Journal of the Korean Magnetics Society
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    • v.13 no.3
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    • pp.109-114
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    • 2003
  • The purpose of this study Is to investigate the effect of $V_2$O$_{5}$ addition on the microstructures and magnetic properties of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2O_{5}$-doped NiCuZn ferrite pastes. With increasing the $V_2O_{5}$ content, the exaggerated grain growth of ferrite layers was developed due to the promotion of Ag diffusion and Cu segregation into the grain boundaries oi ferrites, which affected significantly the magnetic properties of the chip inductors. After sintering at $900^{\circ}C$, the inductance at 10 MHZ of the 0.5 wt% $V_2O_{5}$-doped chip inductor was 3.7 ${\mu}$H less than 4.2 ${\mu}$H of the 0.3 wt% $V_2O_{5}$-doped one, which was thought to be caused by the residual stress at the ferrite layers increased with the promotion of Ag diffusion and Cu segregation. The quality factor of the 0.5 wt% $V_2O_{5}$-doped chip inductor decreased with increasing the sintering temperature, which was considered to be caused by the electrical resistivity of the ferrite layer decreased with the promotion of Ag/cu segregation at the grain boundaries and the growth of the mean grain size of ferrite due to exaggerated grain growth of ferrite layers.

A Study on Characteristic of Superconductivity and Microstructure of $Y_1Ba_2Cu_3O_{7-y}$-Ag ($Y_1Ba_2Cu_3O_{7-y}$-Ag의 초전도성과 미세구조의 특성 연구)

  • Kim, Chae-Ok;Park, Jeong-Su;Yu, Deok-Su
    • Korean Journal of Materials Research
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    • v.5 no.7
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    • pp.786-793
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    • 1995
  • Ag-doped $Y_1$Ba$_2$Cu$_3$O$_{7-y}$ samples have been prepared by solid state reaction. High-Tc super conductivity, microstructure and mechanical property of the Ag-doped $Y_1$Ba$_2$Cu$_3$O$_{7-y}$ samples have been studied. As the Ag content increased, the grain size of $Y_1$Ba$_2$Cu$_3$O$_{7-y}$, increased and connectivity between the grains was improved, and the sample becomed denser and harder than the undoped. From the result, it is concluded that Ag addition reduced weak link and weak coupling between grains and led to the strong coupling. Furthermore, the anisotropy of crytstal structure was decreased and thermal stability, mechanical property of $Y_1$Ba$_2$Cu$_3$O$_{7-y}$-Ag were improved.mproved.

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A Study on Holographic Grating Formation in Se-base Amorphous Chalcogenide Thin Films (Se-base로 한 비정질 칼코게나이드 박막의 훌로그래픽 격자 형성)

  • Ju, Long-Yun;Choi, Hyuk;Nam, Ki-Hyeon;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.181-182
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    • 2007
  • In this paper, we investigated the diffraction grating efficiency on $Ge_{75}Se_{25}$ and Ag-doped amorphous chalcogenide $Ag/Ge_{75}Se_{25}$ thin film for used to volume hologram. The film thickness was 2 um and diffraction efficiency was obtained from He-Ne (632.8nm) and DPSS(532nm) (P:P) polarized laser beam on $Ge_{75}Se_{25}$ and Ag/$Ge_{75}Se_{25}$ thin films. As a result. for the films, the diffraction efficiency on Ag/$Ge_{75}Se_{25}$ double layer, was better than single $Ge_{75}Se_{25}$ thin films. The recording speed of DPSS laser is higher than that of He-Ne laser.

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