• Korean Journal of Materials Research
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• v.26 no.2
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• pp.73-78
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• 2016

$TiO_2$ nanoparticles were synthesized by a sol-gel process using titanium tetra isopropoxide as a precursor at room temperature. Ag-doped $TiO_2$ nanoparticles were prepared by photoreduction of $AgNO_3$ on $TiO_2$ under UV light irradiation and calcinated at $400^{\circ}C$. Ag-doped $TiO_2$ nanoparticles were characterized for their structural and morphological properties by X-ray diffractometry (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and transmission electron microscopy (TEM). The photocatalytic properties of the $TiO_2$ and Ag-doped $TiO_2$ nanoparticles were evaluated according to the degree of photocatalytic degradation of gaseous benzene under UV and visible light irradiation. To estimate the rate of photolysis under UV (${\lambda}=365nm$) and visible (${\lambda}{\geq}410nm$) light, the residual concentration of benzene was monitored by gas chromatography (GC). Both undoped/doped nanoparticles showed about 80 % of photolysis of benzene under UV light. However, under visible light irradiation Ag-doped $TiO_2$ nanoparticles exhibited a photocatalytic reaction toward the photodegradation of benzene more efficient than that of bare $TiO_2$. The enhanced photocatalytic reaction of Ag-doped $TiO_2$ nanoparticles is attributed to the decrease in the activation energy and to the existence of Ag in the $TiO_2$ host lattice, which increases the absorption capacity in the visible region by acting as an electron trapper and promotes charge separation of the photoinduced electrons ($e^-$) and holes ($h^+$). The use of Ag-doped $TiO_2$ nanoparticles preserved the option of an environmentally benign photocatalytic reaction using visible light; These particles can be applicable to environmental cleaning applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.249-254
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• 2008

Ag doping effect on $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ cathode material was studied. Specially, we focused on rate performance of Ag doped samples. The $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ powder was prepared by simple combustion method and the Ag was doped using $AgNO_3$ during gelation process. Based on X-ray diffraction analysis, there was no structural change by Ag doping, but the 'metallic' form of Ag was included in the doped powder. Both bare and Ag 1 wt.% doped sample showed similar discharge capacity of 242 mAh/g at 0.2C rate. However, as the increase of charge-discharge rate to 3C, Ag 1 wt.% doped sample showed higher discharge capacity (172 mAh/g) and better cyclic performance than those of bare sample. The discharge capacity of Ag 5 wt.% doped sample was relatively low at all rate condition. However it displayed better rate performance than other samples.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.988-993
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• 2004

Luminescence characteristics of Ag-doped ZnO as the quantum dot materials to increasing the efficiency on dye-sensitized solar cells (DSC) have been studied. Ag doped ZnO powder was produced by the self-sustaining combustion process using ultrasonic spraying heating method. Luminescence wavelength region of the ZnO by Ag doping was shifted to longer wavelength. Tn the case of the Ag doped ZnO powder, broad luminescence spectrum centered on 600nm was observed. On the other hand, we compared PL data of RTA treated ZnO:Ag film at various temperatures because the front electrode of solar cell was in need of the sintering process. In XRD and PL data for RTA treated film at the 500$^{\circ}C$ showed good property. And, it was found that the grain size wasn't growing but only optical property was changed. According to the result of XRD, PL, absorption, emission spectrum and DV-X${\alpha}$ used in theoretical calculation, it is considered to be possible to use Ag doped ZnO as quantum dot material for improving DSC efficiency.

• Journal of Sensor Science and Technology
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• v.23 no.6
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• pp.397-401
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• 2014

This paper describes the fabrication and characteristics of $C_2H_2$ gas sensor based on Ag-doped hierarchical ZnO nanostructures. In this work, a pure hierarchical ZnO structure was prepared using a simple hydrothermal method, and Ag nanoparticles doped the hierarchical ZnO structure were uniformly synthesized through photochemical route. The synthesized samples were characterized by SEM, TEM, EDS, XRD and PL spectra. Average size of prepared ZnO structures was around $2{\sim}3{\mu}m$ and showed highly uniform. The average size of Ag nanoparticles was 70 nm. The gas sensing properties of as-prepared products were investigated using resistivity-type gas sensors. 5 at% Ag-doped ZnO based sensors exhibited good performances for $C_2H_2$ gas in comparison with the un-doped one. The sensor based on Ag-doped hierarchical ZnO structures had linear response property from 5~1000 ppm of $C_2H_2$ concentration at working temperature of $200^{\circ}C$. The response values with 100 ppm $C_2H_2$ at $200^{\circ}C$ were 10% and 75% for pure and 5 at% Ag-doped hierarchical ZnO nanostructures, respectively. Moreover, the device showed excellent selectivity towards to $C_2H_2$ gas at optimal working temperature of $200^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1022-1026
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.334-337
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• 2015

Pure ZnO, ZnO nanowires doped with 3 wt.% Ga (3GZO) and doped with 3 wt.% Ag (3SZO) were grown by a hot-walled pulse laser deposition (HW-PLD) technique. The optical and chemical properties of Ga and Ag doped nanowires was analyzed. Nanowires were determined to be under 200 nm in diameter and several μm in length. Change of significant resistance was observed and the gas detection sensitivities of ZnO, 3GZO and 3SZO nanawires were compared. The sensitivities of ZnO, 3GZO, and 3SZO nanowire sensors were measured at 300℃ for 1 ppm of ethanol gas at 97%, 48%, and 203%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.347-347
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• 2010

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.385-386
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• 2007

We prepared the Al doped ZnO coating Ag multilayer thin films on glass without substrate heating using FTS system. The structure of multilayer thin films has Al doped ZnO/Ag/Al doped ZnO(AZO/Ag/AZO). The thickness of top and bottom AZO thin films were fixed to 50 nm, respectively and controlled the thickness of Ag thin films with deposition time. As-doped multilayer thin films were prepared at 1mTorr and input power (DC) of 100W at room temperature. To investigate the film properties, we employed four-point probe, UVNIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM).

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

• Progress in Superconductivity
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• v.12 no.1
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• pp.1-5
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• 2010

In this work we synthesized both MgB2 and Carbon doped MgB2 superconductor with Ag addition via high energy milling and substituent heat treatment. Heat treatments were performed at $900\;^{\circ}C$ for 30 min in flowing Ar gas. We varied amount of Ag powder. In a range of Ag powder was 0~5wt%. The effect of Ag was correlated with superconducting properties. The results show a slight decrease in critical temperature ($T_c$) and a reduction of critical current density ($J_c$) at high fields for the Ag-doped samples as compared to the un-doped samples. Reduction of $J_c$ may be due to the formation of MgAg compound.