• 한국결정성장학회지
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• 제7권2호
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• pp.309-314
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• 1997

Ag-Pd/$Al_2O_3$와 Pt 기판에 스핀온 방법으로 제조된 PZT 후막의 열처리 방법에 따른 전기적 특성을 조사하였다. 전기적 특성을 측정하기 위하여 상부전극으로 은(Ag)을 PZT표면에 충착하였다. 이렇게 만들어진 PZT 후막의 결정구조는 X-ray로 조사하였으며, 유전상수는 HP4284A를 사용하여 1 KHz, 10 mV에서 측정하였다. 또한 유전계수는 Berlincourt 피에조메터를 사용하여 측정하였다. 그 결과 3 wt% PbO가 첨가된 PZT 후막의 전기적 특성은 오히려 감소하였으며, Ag-Pd 전극은 Pt 전극을 대체할 수 있는 가능성이 매우 높았다. 특히 스핀온 방법으로 제조된 PZT 후막을 급속열처리(RTA)를 함으로써 전기적 특성을 크게 향상시킬 수 있었다.

• 한국자기학회지
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• 제7권1호
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• pp.31-37
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• 1997

조성과 강자성 상하지층이 Co-Ag 나노입상 합금박막의 거대자기저항과 포화자기장에 미치는 효과에 대하여 연구하였다. 두께 3000 .angs. , 30 at.% Co 조성의 증착된 상태의 합금박막에서 23 %의 최대 자기저항비를 얻었으며 포화자기장은 2.3 kOe 였다. 두께 .angs.의 $Co_{30}$Ag$_{70}$ 합금박막의 자기저항비는 3.65 %, 포화자기장은 3.0 kOe 이었으며 200 .angs. 의 Fe를 상하지층으로 증착하였을 때 자기저항비는 3.3%, 포화자기장은 1.23 kOe로 감소하였다. 강자성 상하지층이 교환결합에 의하여 합금박막의 포화자기장을 감소 시키는 효과가 있었으며 그 효과는 합금박막의 두께가 약 3000 .angs. 이하에서 나타났다. 교환결합 강자성체 인 Co, NiFe, 그리고 Fe중에서 포화자 기장 감소에 가장 효과적인 재료는 Fe 이었다.다.

• 한국표면공학회지
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• 제54권3호
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• pp.119-123
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• 2021

SnO₂ single layer and SnO₂/Ag/SnO₂ (SAS) tri-layered films were deposited on the glass substrate by RF and DC magnetron sputtering at room temperature and then the effect of Ag interlayer on the opto-electrical performance of the films were considered. As deposited SnO₂ films show a visible transmittance of 85.5 % and a sheet resistance of 1.2×10⁴ Ω/□, the SAS films with a 15 nm thick Ag interlayer show a lower resistance of 18.8 Ω/□ and a visible transmittance of 70.6 %, respectively. The figure of merit based on the optical transmittance and sheet resistance revealed that the Ag interlayer in the SnO₂ films enhances the opto-electrical performance without substrate heating or annealing process.

• 한국자기학회지
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• 제12권3호
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• pp.94-98
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• 2002

20nm이하의 얇은 박막에서도 높은 보자력이 요구되는 Ti/CoCrPt 수직자기기록박막의 보자력 향상을 위해 Al, Cu, Ni, Cr, Ag, Mg, Fe, Co, Pd, Au, Pt, Mo, Hf등의 여러 하지층과 제조조건이 보자력에 미치는 영향을 조사하였다 이들 중 Ag과 Mg하지층은 Ti/CoCrPt박막의 보자력을 향상시켰으며 특히 2nm Ag 하지층을 사용할 경우 10nm CoCrPt 박막에서 2200 Oe의 높은 보자력을 보일뿐 아니라 $\alpha$값을 낮추는 효과가 있었다. 그러나 Ag를 하지층으로 사용하면 기대와는 달리 Ti(002)면의 우선배향 성장이 전혀 일어나지 않아 보자력 증대에 다른 기구가 작용하는 것으로 판단되었다. 그리고 표면의 거칠기가 큰 기판에서는 보자력뿐만 아니라 역자구생성자계도 감소하였다.

• 열처리공학회지
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• 제24권5호
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• pp.243-250
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• 2011

When alloys are vacuum-deposited on cooled substrates, super-rapidly cooled alloy films in the unequilibrium state can be obtained. As an application of this method, Ag-Cu, Ag-Ni and Ag-C alloys were successfully produced, and their mechanical properties with tempering temperature were investigated. The following results were obtained : (1) In case of Ag-Cu alloys, the solid solution was hardened by tempering at $150^{\circ}C$. The hardening is considered to occur when the solid solution begins to decompose into ${\alpha}$ and ${\beta}$ phases. The Knoop hardness number of a 40 at.%Ag-Cu alloy film deposited on a cooled glass substrate was 390 $kg/mm^2$. The as-deposited films were generally very hard but fractured under stresses below their elastic limits. (2) In case of Ag-Ni and Ag-C alloys, after the tempering of 4 at.%Ni-Ag alloy at $400^{\circ}C$ and of 1 and 2 at.%C-Ag alloys at $200^{\circ}C$, they were hardened by the precipitation of fine nickel and carbon particles. The linear relationship between proof stress vs. $(grain\;diameter)^{-l/2}$ for bulk silver polycrystals can be applied to vacuum-deposited films up to about 0.1 ${\mu}m$ grain diameter, but the proof stress of ultra-fine grained silver with grain diameters of less than 0.1 ${\mu}m$ was smaller than the value expected from the Petch's relation.

• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1022-1026
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.24-24
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30nm and 50nm respectively, device have excellent characteristics.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.144-150
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• 2003

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism using the irradiation with Polarized He-Ne laser light in the Ag/As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ multi-layer. Multilayer structures were formed by alternating metal(Ag) and chalcogenide(As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$) thin film. The Ag Polarized photodoping result in reducing the time of saturation anisotropy and increasing the sensitivity of linearly anisotropy intensity As the results, the Ag polarized photodoping will be have a capability of new method that suggests more improvement of photoinduced anisotropy property in the thin films of chalcogenide.ogenide.ide.

• 열처리공학회지
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• 제30권4호
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• pp.151-155
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• 2017

The ZTO single layer and ZTO/Ag/ZTO tri-layer films were deposited on glass substrates by using the radio frequency (RF) and direct current (DC) magnetron sputtering and then rapid thermal annealed (RTA) in a low pressure condition for 10 minutes at 150 and $300^{\circ}C$, respectively. As deposited tri-layer films show the 81.7% of visible transmittance and $4.88{\times}10^{-5}{\Omega}cm$ of electrical resistivity, while the films annealed at $300^{\circ}C$ show the increased visible transmittance of 82.8%. The electrical resistivity also decreased as low as $3.64{\times}10^{-5}{\Omega}cm$. From the observed results, it is concluded that rapid thermal annealing (RTA) is an attractive post-deposition process to optimize the opto-elecrtical properties of ZTO/Ag/ZTO tri-layer films for the various display applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.171-174
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• 2004

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.