• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.574-577
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• 1999

The chalcogenide glasses of thin films have superior property of the photoinduced anisotrophy(PA). In this study, we observed the phenomenon of Ag polarized photodoping using the irradiation with polarized He-Ne laser light, in the thin film of chalcogenide As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/ and the double-layer of Ag doped As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/. The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.217-222
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• 1998

Coating films of $SiO_2-TiO_2-AgO$ have been prepared on soda-lime-silica slide glasses and single crystal silicon wafer by the sol-gel method using a spin-coating technique. Commercially available tetraethyl orthosilicate, titanium trichloride, and silver-nitrates were used as starting materials. The heat treatment temperature of this coating films was $500^{\circ}C$ properly, obtained from TG-DTA result. The films with thickness of 310 nm were prepared by 5 times coating. In the case of l0 mol% AgO, the film showed a crack-free and smooth surface, but the higher Ago content exhibited the more pin hole and the segregated cluster of AgO. The IR absorbance of the films decreased in the range of 400 nm to 700 nm with the increase of annealing temperature. And the reflectance of the coating films decreased and the color was changed light yellow to white yellow with the increase of Ago content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.221-225
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• 2018

In this work, in order to effectively improve the electrical conductivity and visible light transmittance of ZnO thin films, ZnO single layer and ZnO/Ag bi-layer films were deposited on glass substrates by radio frequency and direct current magnetron sputtering, and then, the effects of an Ag buffer layer and electron beam irradiation on the electrical and optical properties of the films were investigated. The observed results indicate that ZnO 100 nm / Ag 7 nm films show higher opto-electrical performance than the ZnO single layer film. In addition, electron beam irradiation also effectively enhanced the visible transmittance and electrical conductivity of the ZnO/Ag bi-layer films.

• 한국포장학회:학술대회논문집
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• 2006.11a
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• pp.54-73
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• 2006

Four different types of chitosan-based nanocomposite films were prepared using a solvent casting method by incorporating with four types of nanoparticles, i.e., an unmodified montmorillonite (Na-MMT), an organically modified montmorillonite (Cloisite 30B), a Nano-silver, and a Ag-zeolite (Ag-Ion). X-ray diffraction patterns of the nanocomposite films indicated that a certain degree of intercalation was formed in the nanocomposite films, with the highest intercalation in the Na-MMT-incorporated films followed by films with Cloisite 30B and Ag-Ion. SEM micrographs showed that in all the nanocomposite films, except the Nanosilver-incorporated one, nanoparticles were dispersed homogeneously throughout the chitosan polymer matrix. Consequently, mechanical and barrier properties of chitosan films were affected through intercalation of nanoparticles, i.e., tensile strength (TS) increased by 7-16%, while water vapor permeability (WVP) decreased by 25-30% depending on the nanoparticle material tested. In addition, chitosan-based nanocomposite films, especially silver-containing ones, showed a promising range of antimicrobial activity.

• Korean Journal of Materials Research
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• v.20 no.10
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• pp.513-517
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• 2010

There have been many efforts to modify and improve the properties of functional thin films by hybridization with nano-sized materials. For the fabrication of electronic circuits, micro-patterning is a commonly used process. For photochemical metal-organic deposition, photoresist and dry etching are not necessary for microscale patterning. We obtained direct-patternable $SnO_2$ thin films using a photosensitive solution containing Ag nanoparticles and/or multi-wall carbon nanotubes (MWNTs). The optical transmittance of direct-patternable $SnO_2$ thin films decreased with introduction of nanomaterials due to optical absorption and optical scattering by Ag nanoparticles and MWNTs, respectively. The crystallinity of the $SnO_2$ thin films was not much affected by an incorporation of Ag nanoparticles and MWNTs. In the case of mixed incorporation with Ag nanoparticles and MWNTs, the sheet resistance of $SnO_2$ thin films decreased relative to incorporation of either single component. Valence band spectral analyses of the nano-hybridized $SnO_2$ thin films showed a relation between band structural change and electrical resistance. Direct-patterning of $SnO_2$ hybrid films with a line-width of 30 ${\mu}m$ was successfully performed without photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated, and the electrical properties of $SnO_2$ films can be improved by incorporating Ag nanoparticles and MWNTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.213-217
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• 2012

In this study, we have investigated the holographic grating formation on Ag-doped amorphous As-Ge-Se-S thin films. The dependence of diffraction efficiency as afunction of Ag layer thickness has been investigated in this amorphous chalcogenide films. Holographic gratings was formed using [P:P] polarized Diode Pumped Solid State laser (DPSS, 532.0 nm). The diffraction efficiency was obtained by +1st order intensity. The results were shown that the diffraction efficiency of Ag/AsGeSeS double layer thin films for the Ag thickness, the maximum grating diffraction efficiency using 60 nm Ag layer is 0.96%.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.51-55
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• 2006

ITO/Ag/AZO and AZ0/Ag/ITO multi-layer films deposited on glass substrate by RF magnetron sputtering have a much better electrical properties than ITO and AZO single-layer films. The multi-layer structure was consisted of three layers of ITO, Ag and AZO. The optimum working pressure of AZO layers deposition was determined to be $1.0{\times}10^{-2}$ torr for high optical transmittance and good electrical conductivity. The electrical and optical properties of sub/IT0/Ag/AZO were higher than those of sub/AZ0/Ag/ITO multi-layer films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.535-538
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• 2000

We have investigated the photoinduced anisotropy in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin films, non-doped and photodoped by Ag and Cu. The films were exposed by the linearly polarized He-Ne laser light( $\lambda$=632.8nm). The Ag and Cu photodoping resulted in reducing the time of saturation photoinduced linearly dichroism. Also photoinduced linearly dichroism was increased up to maximum 184% by Ag photodoping and 138% by Cu photodoping, respectively. As the result of this study, the linearly dichroism can be interesting for different applications of photoinduced anisotropy. In addition, it will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.92-95
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• 2005

The silver photodoping effect in amorphous AsGeSeS chalcogenide thin films for holographic recording has been investigated using a HeNe laser ($\lambda$=632.8 nm). The chalcogenide films prepared in this work were thinner in comparison with the penetration depth of recording light ($d_p$=1.66 mm). The variation of the diffraction efficiency $(\eta)$ in amorphous chalcogende films exhibits a tendency, independently of the Ag photodoping. That is, n increases relatively rapidly at the beginning of the recording process, reaches the maximum $({\eta}_{max})$ and slowly decreases. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its peak among the films with d = 40, 80, 150, 300, and 633 nm is observed at d = 150 nm (approximately 1/2n), where n is refractive index of the chalcogenide (n=2.0). The ${\eta}$ is largely enhanced by Ag photodoping into the chalcogenides. In particular, the value of hmax in a bilayer of 10-nm-thick Ag/150-nm-thick AsGeSeS film is about 1.6%, which corresponds to ~20 times in comparison with that of the AsGeSeS film (without Ag).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.313-313
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• 2016

Transparent conductive oxide (TCO) films have many disadvantages, such as rarity, possible exhaustion, process temperature limitations, and brittleness on a flexible substrate. In particular, as display technology moves toward flexible displays, TCO will become completely unsuitable due to its brittleness. To address theses issue, many researchers have been studying TCO substitutes. In recent efforts, metal nanowires, conducting polymers, carbon nanotube networks, graphene films, hybrid thin films, and metal meshes/grids have been evaluated as candidates to replace TCO electrodes. In this study, we fabricated the TCO film with Ag meshes shape using polystyrene (PS) beads monolayer on the substrate. The PS beads were used as a template to create the mesh pattern. We fabricated the monolayer on the flexible substrate (PES) with the well-aligned PS beads. Electrodes with Ag mesh shape were formed using this patterned monolayer. We could fabricated the Ag mesh electrode with the sheet resistance with $8ohm{\Omega}/{\Box}$.