• Journal of the Korean Society for Heat Treatment
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• v.25 no.2
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• pp.85-89
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• 2012

Transparent conductive ZnO/Ag/ZnO (ZAZ) multilayer films were deposited by Radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering. The effects of post deposition vacuum annealing temperature on the structural, electrical and optical properties of the ZAZ multilayer films were investigated. The thickness of ZAZ films is kept constant at ZnO 50 nm/Ag 5nm/ZnO 45 nm, while the vacuum annealing temperatures were varied from 200 and $400^{\circ}C$, respectively. As-deposited ZAZ films exhibit a sheet resistance of $6.1{\Omega}/{\Box}$ and optical transmittance of 72.7%. By increasing annealing temperature to $200^{\circ}C$, the resistivity decreased to as low as $5.3{\Omega}/{\Box}$ and optical transmittance also increased to as high as 82.1%. Post-deposition annealing of ZAZ multilayer films lead to considerably lower electrical resistivity and higher optical transparency, simultaneously by increased crystallization of the films.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.575-579
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• 2016

The metal mesh films with thickness of 1.0, 1.5, $2.0{\mu}m$ were prepared by photolithography using Ag, Al, and Cu metals. Every metal films were showed C(111) preferred orientation and Ag showed the lowest resistivity and followed by Al and Cu. The transmittance of almost films were higher than 90%. But, the Ag film with thickness of $2.0{\mu}m$ was delaminated during photolithography process due to low adhesion. So, Cu and Ti metal films were introduced under Ag film to improve adhesion property. The Cu film showed higher adhesion properties compared to Ti film. Furthermore, the Ti films that deposited on Ag film showed higher acid resistance.

• Journal of the Korean Society for Heat Treatment
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• v.27 no.5
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• pp.230-234
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• 2014

IGZO/Ag bi-layered films were deposited on glass substrate at room temperature with radio frequency and direct current magnetron sputtering, respectively to consider the effect of Ag buffer layer on the electrical, optical and structural properties. For all deposition, while the thickness of Ag buffer layer was varied as 10, 15, and 20 nm, The thickness of IGZO films were kept at 100 nm, In a comparison of figure of merit, IGZO films with 15 nm thick Ag buffer layer show the higher figure of merit ($1.1{\times}10^{-2}{\Omega}^{-1}$) than that of the IGZO single layer films ($3.7{\times}10^{-4}{\Omega}^{-1}$). From the observed results, it is supposed that the IGZO 100 nm/Ag 15 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.5
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• pp.811-816
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• 2006

The single layered magnetic thin films with anisotropic magnetoresistance behavior have advantage on micro integration due to their low cost in manufacturing. Although the conventional MCo (M=Cu, Ag) amorphous ribbons using a rapid solidification process have showed appropriate for magnetic property for bulk devices, they are not appropriate for micro-scale devices due to their brittleness. We prepared the thermal evaporated 100 nm-thick $Cu_{1-x}Co_x\;and\;Ag_{1-x}Co_x(x=0.1{\sim}0.7)$ films on silicon wafers and investigated the magnetic property of the as-depo films such as magnetization and magnetoresistance ratio. We confirmed that the maximum MR ratio of 1.4 and 2.6% at the external field of 0.5 Tesla in $CuCo_{30},\;AgCo_{40}$ films, respectively. Our result implies that AMR may be slightly less than those of the conventional CuCo and AgCo ribbons due to surface scattering, but their AMR ratio be enough for micro-scale application with easy integration compatibility for the process without surface oxidation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.34.2-34.2
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• 2009

The silver sulphide (Ag2S) thin films have been chemically deposited from an alkaline medium (pH 8 to 10) by using a silver nitrate and thiourea as a Ag and S ion precursor sources. Ethylene Damine tetraacetic acid (EDTA) was used as a complexing agent. The effect of annealing atmosphere such as Ar, N2+H2S and O2 on the structural, morphological and optical properties of Ag2S thin films has been studied. The annealed films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques for the structural, morphological, and optical properties, respectively. XRD studies reveal that the as-deposited thin films are polycrystalline with monoclinic crystal structure, is converted in to silver oxide after air annealing. The surface morphology study shows that grains are uniformly distributed over the entire surface of the substrate. Optical absorption study shows the as-deposited Ag2S thin films with band gap energy of 0.92eV and after air annealing it is found to be 2.25 eV corresponding to silver oxide thin films.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.217-220
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• 2017

We deposited transparent conductive ZTO/Ag/ZTO trilayer thin films on glass substrates through magnetron sputtering, and then conducted intense electron beam irradiation on their surfaces to investigate the effects of electron irradiation on the structural, optical, and electrical properties of these films. After deposition, we electron irradiated the ZTO/Ag/ZTO films for 10 min at electron energies of 300, 500, and 700 eV. The films that were electron irradiated at 700 eV showed a higher optical transmittance (84.2%) in the visible wavelength region and a lower resistivity ($7.2{\times}10^{-5}{\Omega}cm$) compared with the other films. The figure of merit revealed that the ZTO/Ag/ZTO films that were electron irradiated at 700 eV had a higher optical and electrical performance than the other films prepared in this study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.139-144
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• 2001

In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.433-434
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• 2007

We prepared ZnO thin films coating Ag on glass substrates at room temperature by using facing targets sputtering (FTS) method. ZnO thin films were deposited with same conditions. Ag with various thickness of thin films were used as intermediate layers. The electrical, optical and crystallographic properties of thin films were investigated by Four-Point probe, UV/VIS spectrometer and XRD. From the results, we could confirm that the thickness of Ag layer changes the electrical and optical performances of the multilayers.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.63-71
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• 2001

The effects of an Ag seed layer on the magnetic properties and the microstructural evolution of SmCo/Cr thin films deposited on glass substrates were investigated. Coercivity of the films is 2.0 kOe when the thickness of Ag seed layer was 1nm thick, but it increased to 2.7 kOe when the Ag seed layer thickness is 3 nm. The increase of coercivity for film with 3 nm-thick Ag is due to roughness of Cr and grain size of Cr by the Ag microbumps. Ar partial pressure influenced on the formation of Ag microbumps, for example, they were formed at 5 mTorr when Ag thickness was 1 nm. The mechanism of magnetization reversal of the SmCo films changed from domain wall motion to domain rotation as the Ag inserted. This was thought to be due to inhibition of domain wall motion by the reduction of Cr grain size and the increase of roughness.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.