• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.374.2-374.2
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• 2016

Volatile organic compounds (VOCs) in the atmosphere are harmful materials which influence indoor air environment and human health. Titanium dioxide ($TiO_2$) is photocatalyst extensively used in degradation of organic compound. To improve the photocatalytic activity in the visible light region, doping with non-metals element or loading noble metals on the surface of $TiO_2$ is generally proposed. In this study, N- doped $TiO_2$ having photocatalytic activity in visible light region was attached noble metal such as Pt, Ag, Pd, Au by coupling method. Catalytic activities of Noble metal coupled $N-TiO_2$ powders were evaluated by the improvement of their photocatalytic activities and the degradation of VOC gas. A UV-Vis spectrophotometer was used to measure the diffuse reflectance spectra of coupled $N-TiO_2$ sample. The photocatlytic activities of as prepared samples were characterized by the decoloration of aqueous MB solution under Xenon light source (UV and visible light). To measure of decomposition VOCs, ethylbenzene was selected for target VOC material and the concentration was monitored under UVLED irradiation in a closed chamber system. Adjusting the initial concentration of 10~12 ppm, to evaluate the removal characteristics by using the coupled $N-TiO_2$.

• International Journal of Precision Engineering and Manufacturing-Green Technology
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• 제5권5호
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• pp.643-650
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• 2018

A self-powered electrochromic device was fabricated on an indium tin oxide-polyethylene naphthalate flexible substrate using a dye-sensitized solar cell (DSSC) as a self-harvesting source; the electrochromic device was naturally bleached and operated under outdoor light conditions. The color of the organic electrochromic polymer, poly(3,4-ethylenedioxythiophene) polystyrene sulfonate, was shifted from pale blue to deep blue with an antimony tin oxide film as a charge-balanced material. Electrochromic performance was enhanced by secondary doping using dimethyl sulfoxide. As a result, the device showed stable switching behavior with a high transmittance change difference of 40% at its specific wavelength of 630 nm for 6 hrs. To improve the efficiency of the solar cell, 1.0 wt.% of Ag NWs in the photoanode was applied to the $TiO_2$ photoanode. It resulted in an efficiency of 3.3%, leading to an operating voltage of 0.7 V under xenon lamp conditions. As a result, we built a standalone self-harvesting electrochromic system with the performance of transmittance switching of 29% at 630 nm, by connecting with two solar cells in a device. Thus, a self-harvesting and flexible device was fabricated to operate automatically under the irradiated/dark conditions.

• Current Applied Physics
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• 제18권12호
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• pp.1534-1539
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• 2018

SnSe single crystal showed a high thermoelectric zT of 2.6 at 923 K mainly due to an extremely low thermal conductivity $0.23W\;m^{-1}\;K^{-1}$. It has anisotropic crystal structure resulting in deterioration of thermoelectric performance in polycrystalline SnSe, providing a low zT of 0.6 and 0.8 for Ag and Na-doped SnSe, respectively. Here, we presented the thermoelectric properties on the K-doped $K_xSn_{1-x}Se$ (x = 0, 0.1, 0.3, 0.5, 1.5, and 2.0%) polycrystals, synthesized by a high-temperature melting and hot-press sintering with annealing process. The K-doping in SnSe efficiently enhances the hole carrier concentration without significant degradation of carrier mobility. We find that there exist widespread Se-rich precipitates, inducing strong phonon scattering and thus resulting in a very low thermal conductivity. Due to low thermal conductivity and moderate power factor, the $K_{0.001}Sn_{0.999}Se$ sample shows an exceptionally high zT of 1.11 at 823 K which is significantly enhanced value in polycrystalline compounds.

• 공업화학
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• 제5권5호
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• pp.764-771
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• 1994

친핵성용매하에서 p-toluenesulfonic acid나 bezensulfonic acid와 같은 유기산을 지지전해질 겸 dopant로 사용하여 전도성 Polypyrrole필름을 전해중합하였고 분해 특성과 기계적 물성증가에 대하여 고찰하였다. Dimethyformamide/p-toluenesulfonic acid에서 합성한 polypyrrole 필름이 전도도 10-40S/cm, 인장강도 $25N/mm^2$. 연신율은 10%로 가장 좋은 특성을 나타내었다. 또한 전해중합시 최적 조건은 0.5M의 pyrrole과 0.5M의 p-toluenesulfonic acid를 첨가하여 정전류법에서는 $2mA/cm^2$의 전류밀도가, 정전위법으로는 0.9V vs. $Ag/Ag^+$에서 중합할 때였으며 생성된 필름은 공기중에서 안정하였고 도핑, 탈-도핑이 가역적이어서 2차 전지로서의 특성을 갖고 있었다. 온도에 따른 분해과정이 1차 반응으로 dopant 음이온이 분해반응에 관여하지 않아 산화안정성이 좋았으며 분해활성화 에너지는 $1.01JK^{-1}mol^{-1}$, $25^{\circ}C$에서의 분해속도상수는 $3.1{\times}10-7min^{-1}$였다. 여러 가지 host polymer와의 composite를 검토한 결과 인장강도는 50%, 연신율은 100% 정도로 기계적 물성을 증가시킬 수 있었다.

• 한국재료학회지
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• 제26권5호
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• pp.258-265
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• 2016

Fluorine-doped tin oxide (FTO) nanoparticles have been successfully synthesized using ultrasonic spray pyrolysis. The morphologies, crystal structures, chemical bonding states, and electrochemical properties of the nanoparticles are investigated. The FTO nanoparticles show uniform morphology and size distribution in the range of 6-10 nm. The FTO nanoparticles exhibit excellent electrochemical performance with high discharge specific capacity and good cycling stability ($620mAhg^{-1}$ capacity retention up to 50 cycles), as well as excellent high-rate performance ($250mAhg^{-1}$ at $700mAg^{-1}$) compared to that of commercial $SnO_2$. The improved electrochemical performance can be explained by two main effects. First, the excellent cycling stability with high discharge capacity is attributed to the nano-sized FTO particles, which are related to the increased electrochemical active area between the electrode and electrolyte. Second, the superb high-rate performance and the excellent cycling stability are ascribed to the increased electrical conductivity, which results from the introduction of fluorine doping in $SnO_2$. This noble electrode structure can provide powerful potential anode materials for high-performance lithiumion batteries.

• Environmental Engineering Research
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• 제16권2호
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• pp.81-90
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• 2011

Different weight percentages of Ag, Pt, and Au doped nano $TiO_2$ were synthesized using the acetic acid hydrolyzed sol-gel method. The crystallite phase, surface morphology combined with elemental composition and light absorption properties of the doped nano $TiO_2$ were comprehensively examined using X-ray diffraction (XRD), $N_2$ sorption analysis, transmission electron microscopic (TEM), energy dispersive X-ray, and DRS UV-vis analysis. The doping of noble metals stabilized the anatase phase, without conversion to rutile phase. The formation of gold nano particles in Au doped nano $TiO_2$ was confirmed from the XRD patterns for gold. The specific surface area was found to be in the range 50 to 85 $m^2$/g. TEM images confirmed the formation a hexagonal plate like morphology of nano $TiO_2$. The photocatalytic activity of doped nano $TiO_2$ was evaluated using 4-chlorophenol as the model pollutant. Au doped (0.5 wt %) nano $TiO_2$ was found to exhibit higher photocatalytic activity than the other noble metal doped nano $TiO_2$, pure nano $TiO_2$ and commercial $TiO_2$ (Degussa P-25). This enhanced photocatalytic activity was due to the cathodic influence of gold in suppressing the electron-hole recombination during the reaction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.566-566
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• 2012

그래핀(Graphene)은 모든 탄소 동소체의 기본구성 요소로 2 차원 결정구조를 가지며, 양자홀 효과(quantum Hall effect), 뛰어난 열 전도도, 고 탄성, 광학적 투과성 등과 같은 탁월한 물리적 성질을 보이는 물질이다. 이러한 그래핀의 우수한 특성은 전계 효과 트랜지스터(field effect transistor), 화학/바이오 센서, 투명 전극(transparent electrode) 등의 다양한 전자소자를 개발하는 응용 가능하다. 그 중, 그래핀 투명전극의 제조는 가장 응용가능성이 높은 분야이다. 현재 투명전극 물질로는 인듐-주석 산화물(indium tin oxide; ITO)가 널리 이용되고 있으나, 인듐의 고갈로 인한 공급부족 문제 및 고 생산비용, 휘어지지 않는 취성 등의 단점을 지니고 있다. 따라서, 우수한 광학적 투과성과 전기전도성을 지닌 그래핀이 ITO의 대체 물질로서 각광받고 있다.[1-5] 본 연구에서는 그래핀의 투명전도필름의 응용을 위해 면저항을 낮추기 위한 방법으로 화학적 도핑(doping)을 이용하였다. 그래핀은 구리(copper; Cu) 호일을 촉매로 사용하여 열 화학증착법(Thermal Chemical Vapor Deposition)을 이용하여 합성하였다. 합성된 그래핀은 PMMA(Poly(methyl methacrylate)) 전사법을 이용하여 산화실리콘(SiO2) 기판에 전사 후, 염화은(AgCl)과 클로로벤젠(C6H5Cl)으로 만든 콜로이드(colloid) 용액에 디핑(dipping)하여 그래핀에 은 입자를 도핑 하였다. 그 결과, 은 입자 도핑 농도에 따라 면저항이 감소하는 양상을 보였다. 제작된 그래핀 투명전도성 필름의 투과도는 자외선-가시광선-근적외선 분광법(UV-Vis-NIR spectroscopy)를 이용하여 측정하였고, 라만 분광법(Raman spectroscopy)을 통해 그래핀 필름의 질적 우수성과 성장 균일도를 조사하였다.

• 한국분말재료학회지
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• 제20권6호
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• pp.474-478
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• 2013

The most general photocatalyst, $TiO_2$ and $WO_3$, are acknowledged to be ineffective in range of visible light. Therefore, many efforts have been directed at improving their activity such as: band-gap narrowing with non-metal element doping and making composites with high specific surface area to effectively separate electrons and holes. In this paper, the method was introduced to prepare a photo-active catalyst to visible irradiation by making a mixture with $TiO_2$ and $WO_3$. In the $TiO_2-WO_3$ composite, $WO_3$ absorbs visible light creating excited electrons and holes while some of the excited electrons move to $TiO_2$ and the holes remain in $WO_3$. This charge separation reduces electron-hole recombination resulting in an enhancement of photocatalytic activity. Added Ag plays the role of electron acceptor, retarding the recombination rate of excited electrons and holes. In making a mixture of $TiO_2-WO_3$ composite, the mixing route affects the photocatalytic activity. The planetary ball-mill method is more effective than magnetic stirring route, owing to a more effective dispersion of aggregated powders. The volume ratio of $TiO_2(4)$ and $WO_3(6)$ shows the most effective photocatalytic activity in the range of visible light in the view point of effective separation of electrons and holes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Current Applied Physics
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• 제18권11호
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• pp.1306-1312
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• 2018

The Mn-doped copper nitride ($Cu_3N$) films with Mn concentration of 2.0 at. % have high crystallinity and uniform surface morphology. We found that the as-synthesized Mn-doped $Cu_3N$ films show suitable optical absorption in the visible region and the band gap is ~1.48 eV. A simple photodetector based on Mn doped $Cu_3N$ films was firstly fabricated via magnetron sputtering method. The fabricated device with doping of Mn demonstrated high photocurrent response and fast response shorter than 0.1 s both for rise and decay time superior to the pure $Cu_3N$. Furthermore, the energy levels of Mn-doped Cu3N matched well with ITO and Ag electrode. The excellent photoelectric properties reflect a good balance between sensitivities and response rate. Our investigation reveals the excellent potential of Mn-doped $Cu_3N$ films for application of photodetectors.