• 제목/요약/키워드: Ag contact

검색결과 235건 처리시간 0.023초

친환경 Ag-SnO2 전기접점재료의 분말야금 공정 최적화 (Process Optimization of Environment-Friendly Ag-SnO2 Electric Contact Materials through a Powder Metallurgy)

  • 김정곤
    • 한국분말재료학회지
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    • 제14권5호
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    • pp.327-332
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    • 2007
  • In a view point of environment, the advanced electric contact material without environmental load element such as cadmium has to be developed. Extensive studies have been carried out on $Ag-SnO_2$ electric contact material as a substitute of Ag-CdO contact materials. In the present study, powder metallurgy including compaction and sintering is introduced to solve the incomplete oxidation problems in manufacturing process of $Ag-SnO_2$ electrical contact material. The $Ag-SnO_2$ contact material, fabricated in this study, was actually set in an electric switchgear of which working voltage is 462V and current is between 25 and 40A, for the purpose of testing its performance. As a result, it exceeded the existing Ag-CdO contact materials in terminal-temperature ascent and main contact resistance.

Ag 코팅한 W-Ag 전기접점/Cu 모재간의 브레이징 접합 특성 (Brazing Adhesion Properties of Ag Coated W-Ag Electric Contact on the Cu Substrate)

  • 강현구;강윤성;이재성
    • 한국분말재료학회지
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    • 제13권1호
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    • pp.18-24
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    • 2006
  • The brazing adhesion properties of Ag coated W-Ag electric contact on the Cu substrate have been investigated in therms of microstructure, phase equilibrium and adhesion strength. Precoating of Ag layer ($3{\mu}m$ in thickness) on the $W-40\%Ag$ contact material was done by electro-plating method. Subsequently the brazing treatment was conducted by inserting BCuP-5 filler metal (Ag-Cu-P alloy) layer between Ag coated W-Ag and Cu substrate and annealing at $710^{\circ}C$ in $H_2$ atmosphere. The optimum brazing temperature of $710^{\circ}C$ was semi-empirically calculated on the basis of the Cu atomic diffusion profile in Ag layer of commercial electric contact produced by the same brazing process. As a mechanical test of the electric contact after brazing treatment the adhesion strength between the electric contact and Cu substrate was measured using Instron. The microstructure and phase equilibrium study revealed that the sound interlayer structure was formed by relatively low brazing treatment at $710^{\circ}C$. Thin Ag electro-plated layer precoated on the electric contact ($3{\mu}m$ in thickness) is thought to be enough for high adhesion strength arid sound microstructure in interface layer.

저압차단기용 접점재료의 소모특성에 미치는 개리속도의 영향 (The Effect of Opening Velocity on the Arc Erosion of Contact Materials for Low-Voltage Circuit Breaker)

  • 연영명;박홍태;오일성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.632-635
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    • 2004
  • The purpose of this paper is to investigate the effect of arc current and contact velocity on the erosion of silver-based contact materials to be used in low voltage circuit breakers. The opening velocity during breaking, which is constant, ranges between 2m/s to 6m/s in the 415V $25kA_{rms}$. Contact erosion is evaluated by measuring the mass change of the cathode and anode. The results show that the increase in opening velocity from 2m/s to 6m/s leads to a decrease in the contact erosion. It is shown that the material transfer from one electrode to another depends on the transfer charge and the opening velocity of the contacts. The contact pairs of AgWC/AgCdO are superior to $AgWC/AgSnO_2In_2O_3$ or AgWC/AgC contact pairs in the contact erosion.

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실리콘 태양전지용 Ag pastes 에서의 무연 프릿에 따른 Ag, Si간 접촉 형성 (Contact Formation Between Ag and Si With Lead-Free Frits in Ag Pastes For Si Solar Cells)

  • 김동선;황성진;김종우;이정기;김형순
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.61.2-61.2
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    • 2010
  • Ag thick-film has usually been used for the front electrode of Si solar cells with the outstanding electrical properties. Ag paste consists of Ag powers, vehicles, frits and additives. Ag paste has broadly been screen-printed on the front side of Si wafer with the merits of low cost and simplicity. The optimal contact formation between Ag electrodes and Si wafer in the front electrode during a fast firing has been considered as the key factor for high efficiency. Although the content of frit in Ag pastes is less than 5wt%, it can profoundly influence the contact formation between Ag and Si under the fast firing. In this study, the effects of lead-free frits on the contacts between Ag and Si were studied with the thermal properties and compositions of various frits. Our experimental results showed that the electrical properties of cells were related to the interface structures between Ag and Si. It was found that current path of electrons from Si to Ag would be possible through the tunneling mechanism assisted by tens of nano-Ag recrystals on $n^+$ emitter as well as Ag recrystals penetrated into $n^+$ emitter layers. These preliminary studies will be helpful for designing the proper frits for the Ag pastes with considering the properties of various Si wafers.

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급속응고한 Ag-X%Zn계 전기접점재료에 미치는 Sn함량의 영향 (The Effect of the Sn contents on Rapidly Solidified Ag-X%Zn Electric Contact Materials)

  • 김종규;장대정;주광일;이은호;엄승열;남태운
    • 한국주조공학회지
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    • 제28권4호
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    • pp.184-189
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    • 2008
  • Ag-Cd alloy has been widely used as an electrical contact material, since Ag-Cd alloy has a good wear resistance and stable contact resistance. But nowadays Ag-Cd alloy is not considered as electrical contact material any more due to detrimental effect on environments. Currently, active researches are being performed on ($Ag-SnO_2$ and $Ag-SnO_{2}-In_{2}O_{3}$) as an alternative solution which can fix the remaining environmental problems. However, $In_{2}O_{3}$ is relatively expensive and Ag-Sn alloy has low wear resistance. Our recent research results show that Ag-X%Zn-Y%Sn has similar physical and chemical properties. In the present study, so we tried to change and to optimize the Zn oxide content to over 6 wt% and Sn oxide content with 0.5, 1.0, 1.5 wt%. Results obtained from the experiments on the Ag-X%ZnO-Y%$SnO_2$ are discussed.

전자접촉기의 접촉소재에 따른 동작속도 비교 연구 (Comparative Study on Operational Speeds Based on Contact Material of Magnetic Contactor)

  • 고영진
    • 전기전자학회논문지
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    • 제27권3호
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    • pp.246-250
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    • 2023
  • 전자접촉기의 연구에 있어서 접촉부의 소재 및 재질에 따른 아크소호를 중심으로 연구가 되고 있으나, 최근 직류기기의 활용과 고속처리가 요구됨에 따라 접촉기의 동작속도가 중요시되고 있다. 일반적으로 AgSnO2소재가 AgCdO보다 응답특성이 우수하다고 알려져 있으나, 소재 특성 차원에서 알려져 있다. 이에 본 논문에서는 전자접촉기의 완성품을 구성하여 AgSnO2소재와 AgCdO소재에 대하여 동작속도를 비교하도록 하였으며, 실험을 통해 검증하도록 하였다.

분말성형법으로 제조된 Ag-SnO2-Bi2O3 접점소재의 미세조직 및 특성 (Microstructure and Characteristics of Ag-SnO2-Bi2O3 Contact Materials by Powder Compaction)

  • 이진규
    • 한국분말재료학회지
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    • 제29권1호
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    • pp.41-46
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    • 2022
  • In this study, we report the microstructure and characteristics of Ag-SnO2-Bi2O3 contact materials using a controlled milling process with a subsequent compaction process. Using magnetic pulsed compaction (MPC), the milled Ag-SnO2-Bi2O3 powders have been consolidated into bulk samples. The effects of the compaction conditions on the microstructure and characteristics have been investigated in detail. The nanoscale SnO2 phase and microscale Bi2O3 phase are well-distributed homogeneously in the Ag matrix after the consolidation process. The successful consolidation of Ag-SnO2-Bi2O3 contact materials was achieved by an MPC process with subsequent atmospheric sintering, after which the hardness and electrical conductivity of the Ag-SnO2-Bi2O3 contact materials were found to be 62-75 HV and 52-63% IACS, respectively, which is related to the interfacial stability between the Ag matrix, the SnO2 phase, and the Bi2O3 phase.

CNT-Ag 복합패드가 Cu/Au 범프의 플립칩 접속저항에 미치는 영향 (Effect of CNT-Ag Composite Pad on the Contact Resistance of Flip-Chip Joints Processed with Cu/Au Bumps)

  • 최정열;오태성
    • 마이크로전자및패키징학회지
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    • 제22권3호
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    • pp.39-44
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    • 2015
  • 이방성 전도접착제를 이용하여 Cu/Au 칩 범프를 Cu 기판 배선에 플립칩 실장한 접속부에 대해 CNT-Ag 복합패드가 접속저항에 미치는 영향을 연구하였다. CNT-Ag 복합패드가 내재된 플립칩 접속부가 CNT-Ag 복합패드가 없는 접속부에 비해 더 낮은 접속저항을 나타내었다. 각기 25 MPa, 50 MPa 및 100 MPa의 본딩압력에서 CNT-Ag 복합패드가 내재된 접속부는 $164m{\Omega}$, $141m{\Omega}$$132m{\Omega}$의 평균 접속저항을 나타내었으며, CNT-Ag 복합패드를 형성하지 않은 접속부는 $200m{\Omega}$, $150m{\Omega}$$140m{\Omega}$의 평균 접속저항을 나타내었다.

Enhancement of light reflectance and thermal stability in Ag-Mg alloy contacts on p-type GaN

  • 송양희;손준호;김범준;정관호;이종람
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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    • pp.18-20
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    • 2010
  • 수조구조의 InGaN LED 소자에 적용이 가능하며 높은 열적안정성을 갖는 저저항 고반사율 p형 오믹 전극을 개발하였다. Ag에 Mg을 첨가하여 p형 전극을 이용하여 $400^{\circ}C$, 공기중에서 1분간 열처리 후 $2.2\;{\times}\;10^{-5}\;{\Omega}cm^2$의 낮은 접촉 저항을 얻을 수 있었고, 460 nm 파장에서 82.6%의 높은 반사율을 획득할 수 있었다. 이는 Mg가 첨가됨에 따라 Ag가 고온에서 집괴되는 원인인 산소-공공 결합을 줄여줌으로써 높은 열적 안정성을 얻게 되었다. Ag를 열처리 할 경우, 외부에 존재하는 산소가 공공 자리에 들어간 후, 산소와 공공의 강한 인력에 의해 산소가 침입형 자리에 들어가서면서 두개의 공공과 강하게 bonding을 갖는 diffusion center가 많이 존재하게 된다. 하지만 Mg가 첨가되었을 경우, Oxygen affinity가 강한 Mg에 산소가 먼저 결합을 이루면서 산소-공공결합을 줄여주게 되어 높은 온도에서도 diffusion이 이루어지지 않고 높은 열적 안정성을 갖게 된다.

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고분해능 X선 회절을 이용한 Ag 기반 p형 반사막 오믹 전극 집괴 분석 (Structural Analysis of Ag Agglomeration in Ag-based Ohmic Contact to p-type GaN)

  • 손준호;송양희;이종람
    • 한국진공학회지
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    • 제20권2호
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    • pp.127-134
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    • 2011
  • 본 연구에서는 고분해능 X선 회절법을 이용해 Ni/Ag 반사막 p형 오믹 전극의 Ag 집괴에 따른 전극의 구조 분석을 수행하였다. 대기 분위기에서 오믹 전극을 고온 열처리할 경우, 열처리 시간이 증가할수록 Ag의 집괴가 진행되어 24시간 열처리 후, 전류-전압 곡선은 쇼트키 특성을 나타내었고, 또한 460 nm 파장에서 21%의 낮은 반사도를 나타내었다. X선 회절 결과로부터 Ag의 집괴가 진행될수록, Ag 박막의 내부 변형율을 감소되는 방향으로 Ag 원자의 확산이 진행되어, Ag (111) 결정면의 면간 거리가 bulk Ag와 거의 동일하게 나타났다. 이러한 반사막 오믹 전극의 구조 분석은 고출력 고효율 수직형 LED에 적합한 열적 안정성이 우수한 오믹 전극의 개발에 매우 중요함을 알 수 있다.