Contact Formation Between Ag and Si With Lead-Free Frits in Ag Pastes For Si Solar Cells

실리콘 태양전지용 Ag pastes 에서의 무연 프릿에 따른 Ag, Si간 접촉 형성

Ag thick-film has usually been used for the front electrode of Si solar cells with the outstanding electrical properties. Ag paste consists of Ag powers, vehicles, frits and additives. Ag paste has broadly been screen-printed on the front side of Si wafer with the merits of low cost and simplicity. The optimal contact formation between Ag electrodes and Si wafer in the front electrode during a fast firing has been considered as the key factor for high efficiency. Although the content of frit in Ag pastes is less than 5wt%, it can profoundly influence the contact formation between Ag and Si under the fast firing. In this study, the effects of lead-free frits on the contacts between Ag and Si were studied with the thermal properties and compositions of various frits. Our experimental results showed that the electrical properties of cells were related to the interface structures between Ag and Si. It was found that current path of electrons from Si to Ag would be possible through the tunneling mechanism assisted by tens of nano-Ag recrystals on $n^+$ emitter as well as Ag recrystals penetrated into $n^+$ emitter layers. These preliminary studies will be helpful for designing the proper frits for the Ag pastes with considering the properties of various Si wafers.