• 한국세라믹학회지
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• 제53권6호
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• pp.682-688
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• 2016

In $TiO_2$-CuO systems, low-temperature sinterability was investigated by a conventional sintering method. Sintering temperatures were set at under $950^{\circ}C$, at which the volume diffusion is inactive. The temperatures are less than the melting point of Ag ($961^{\circ}C$), which is often used as an internal conductor in low-temperature co-fired ceramic technology. To optimize the amount of CuO dopant, various dopant contents were added. The optimum level for enhanced densification was 2 wt% CuO. Excess dopants were segregated to the grain boundaries. The segregated dopants supplied a high diffusion path, by which grain boundary diffusion improved. At lower temperatures in the solid state region, grain boundary diffusion was the principal mass transport mechanism for densification. The enhanced grain boundary diffusion, therefore, improved densification. In this regard, the results of this study prove that the sintering mechanism was the same as that of activated sintering.

• 한국초전도ㆍ저온공학회논문지
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• 제23권1호
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• pp.12-16
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• 2021

The magnetic properties of heat treated O-series high temperature superconducting (HTS) GdBCO coated conductor (CC) tapes which were formed of Ag/GdBCO/Buffer-layers/Stainless Steel (SS), were investigated by employing a Quantum Design PPMS-14. Using a modified Bean model, the critical current density J_c values have been estimated from the 𝚫m_irr(H) data, which are obtained by measuring the magnetic moment m(H) loops. For a range of intermediate fields, which are interacting or collective flux pinning area, the magnetic flux behaviors were investigated from the relationship J_c ∝ H^-β. In addition, the changes of irreversibility magnetic field H_irr line of heat-treated O-series HTS GdBCO CC tapes were analyzed, according as the annealing temperature under oxygen flowing increases. Both weak and strong break-downs were found by examining the changes of irreversibility magnetic field H_irr lines.

• 한국초전도ㆍ저온공학회논문지
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• 제25권4호
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• pp.50-53
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• 2023

In this study, the photolithography process was chosen to reduce the aspect ratio of the cross-section of a high-temperature superconducting (HTS) tape by dividing the superconducting layer of the tape. Reducing the aspect ratio decreases the magnetization losses in the second-generation HTS tapes generated by AC magnetic fields. The HTS tape used in the experiment has a thin silver (Ag) layer of about 2 ㎛ on top of the REBCO superconducting layer and no additional stabilizer layer. A dry film resist (DFR) was laminated on top of the HTS tape by a lamination method for the segmentation. Exposure to a 395 nm UV lamp on a patterned mask cures the DFR. Dipping with a 1% Na₂CO₃ solution was followed to develop the uncured film side and to obtain the required pattern. The silver and superconducting layers of the REBCO films were cleaned with an acid solution after the etching. Finally, the segmented HTS tape was completed by stripping the DFR film with acetone.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.299-299
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• 2008

초전도 응용기기 개발을 위해 필수적인 초전도 박막선재는 길이방향으로 임계전류밀도가 균일한 것이 요구되고 있다. 전체 길이에 대해 가장 임계전류 밀도가 낮은 지점에서 선재의 특성이 제한되기 때문이다. 한편 초전도 박막선재의 경우 높은 임계전류 밀도와 함께 과전류 등의 사고발생시를 고려하여 안정화재를 반드시 초전도층 위에 구성하여야 한다. 고가의 은(Ag)을 두껍게 증착할 수 없으므로 보통은 구리도금 또는 솔더링으로 안정화재를 덧댄다. 본 연구에서는 초전도 박막선재의 대전류화와 길이방향의 전류 균일성 향상, 안정화 특성 항상 등의 목적으로 초전도 박막선재간 확산 접합을 시도하였다. 초전도 박막선재 제조 후 안정화재인 은을 증착 후 따로 구리도금이나 솔더링 없이 선재 2가닥을 서로 포개어서 열처리를 하였다. 이때 선재간의 충분한 확산접합을 위하여 선재를 둥근 SUS 디스크에 감고 외부에 다시 SUS판재로 감아서 열처리 도중 압력을 가하였다. 아울러 포개는 방법도 초전도층의 위치에 따라 3 가지로 하였으며 열처리 후 임계전류를 측정하였다. 각 선재한 가닥에 대한 임계전류는 77K에서 50~60 A 정도의 임계전류를 나타내었으며 선재를 접합한 경우 90~120A의 특성을 나타내었으며 특히 초전도층이 설마주보는 형태에서 가장 높은 임계전류 특성을 나타내었다.

• 마이크로전자및패키징학회지
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• 제15권1호
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• pp.19-25
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• 2008

본 논문에서는 2.4GHz의 무선랜 대역에 사용하고 LTCC 다층 기술이 적용된 Front-end Module를 제작하였다. 제안된 FEM은 전력증폭기 IC, 스위치 IC와 LTCC 모듈로 구성하였다. LTCC 모듈은 송신단은 출력 매칭회로(matching circuit)와 저역통과필터, 수신단은 대역통과필터로 구성하였다. 출력 매칭회로를 LTCC에서 구현하기 위해 PCB에서 구현한 출력 매칭회로의 매칭 파라미터를 이용하였다. LTCC 기판의 특성은 유전율 9.0이다. 기판은 각 층의 두께가 30um인 그린시트를 총 26장을 사용하였다. 패턴용 도체는 Ag 페이스트를 사용하였다. 모듈의 크기는 $4.5mm{\times}3.2mm{\times}1.4mm$이다. 제작된 FEM은 21dB의 이득과 -31dBc(1st side lobe)와 -594Bc(2nd side lobe)의 ACPR, 그리고 23dBm의 P1dB 특성을 가짐을 확인하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.1.1-1.1
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• 2011

Printed electronics based on the direct writing of solution processable functional materials have been of paramount interest and importance. In this talk, the synthesis of printable inorganic functional materials (conductors and semiconductors) for thin-film transistors (TFTs) and photovoltaic devices, device fabrication based on a printing technique, and specific characteristics of devices are presented. For printable conductor materials, Ag ink is designed to achieve the long-term dispersion stability and good adhesion property on a glass substrate, and Cu ink is sophisticatedly formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. In addition, the organic thin-film transistor based on the printed metal source/drain electrode exhibits the electrical performance comparable to that of a transistor based on a vacuum deposited Au electrode. For printable amorphous oxide semiconductors (AOSs), I introduce the noble ways to resolve the critical problems, a high processing temperature above $400^{\circ}C$ and low mobility of AOSs annealed at a low temperature below $400^{\circ}C$. The dependency of TFT performances on the chemical structure of AOSs is compared and contrasted to clarify which factor should be considered to realize the low temperature annealed, high performance AOSs. For photovoltaic application, CI(G)S nanoparticle ink for solution processable high performance solar cells is presented. By overcoming the critical drawbacks of conventional solution processed CI(G)S absorber layers, the device quality dense CI(G)S layer is obtained, affording 7.3% efficiency CI(G)S photovoltaic device.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 한국초전도ㆍ저온공학회논문지
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• 제24권3호
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• pp.41-46
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• 2022

The superconducting properties of high temperature superconducting (HTS) GdBCO coated conductor (CC) tape (Ag/GdBCO/Buffer-layers/Stainless Steel) were investigated, specifically a series of samples prepared by vacuum heat treatment (200℃ to 600℃), using a Quantum Design PPMS-14. The critical current density J_c value was obtained by applying the modified Bean model to the irreversible magnetization ∆M_irr(H) data which was estimated from the magnetization M(H) loop. The reduction rates of lnJ_c and T_c values according to the increase of the vacuum annealing temperature T_an were d(lnJ_c)/dT_an = - 0.016 A/(cm²∙℃) and dT_c/dT_an = - 0.24, respectively. We examined the effect of recovery temperature T_re (475℃ to 700℃) and recovery duration time t (0.5 h to 24 h) on the restoration of previously completely lost superconductivity in samples that subsequently received heat treatment in an O₂ gas flow space. All samples were fully restored to superconductivity by heat treatment in an O₂ gas flow space. The recovery temperatures T_re (475℃ to 700℃) and recovery duration times t (0.5 h to 24 h) were both independent of the superconductivity recovery characteristics.