• 한국정밀공학회지
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• 제32권10호
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• pp.903-909
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• 2015

In this study, we used GO (graphene oxide) in order to enhance the adhesion between Ag NWs (nanowires) and substrates. By using a mixture solution of GO and Ag NW, a vacuum filtration process was used to fabricate a 50nm diameter thin film. Next, by using a light annealing process, the mechanical and electrical stability of Ag NW network was improved without any other treatment. The physical properties of the Ag NW - GO hybrid transparent conductive thin film was characterized in terms of a bending test, resistance and transmittance test, and nanoscale imaging using field-emission scanning electron microscopy.

• Progress in Superconductivity
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• 제3권2호
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• pp.247-251
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• 2002

In general, the bubbling, generated during the fabrication of the tapes, breaks the superconducting filament, and critical current of the tapes will be decreased. Heat-treatment schemes of Bi-2223/Ag HTS tapes were modified, such as pre-annealing of multi-stacked billet, 2-step main sintering and ramp rate etc. The generation of bubbling was drastically decreased from 20 bubbles/m to 0 ~ 1 bubble/m by the modified heat-treatment. Therefore, the value of critical current of the tapes without bubbling was increased almost twice higher than that of already existing tapes. Critical current up to 42 A in 40 m length Bi-22231Ag tapes have been measured at 77K, self-field, 1$mutextrm{V}$/cm criterion. It could be confirmed that elimination of bubbling is effective to maintain the superconducting property along the tape length.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.164-164
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• 2007

Photodiffusion of silver into chalcogenide thin film is one of the most interesting effects that occurs in chalcogenide glass as it theatrically changes the properties of the initial material and forms a ternary. Programmable Metallization Cell(PMC) Randon Access Memory use for photodiffusion of mobile metal is based on the electrochemical growth and removal of nanoscale metallic pathway in thin film of solid electrolyte. This paper investigates the annling properties on Ag-doped $Ge_{25}Se_{75}$ thin film structure and describes the electrical characteristics of PMC-RAM. The composition of the intercalation products containing Ag is confirmed using X-ray diffraction which shows the formation of Ag-doped $Ge_{25}Se_{75}$.

• 한국분말재료학회지
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• 제13권1호
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• pp.18-24
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• 2006

The brazing adhesion properties of Ag coated W-Ag electric contact on the Cu substrate have been investigated in therms of microstructure, phase equilibrium and adhesion strength. Precoating of Ag layer ($3{\mu}m$ in thickness) on the $W-40\%Ag$ contact material was done by electro-plating method. Subsequently the brazing treatment was conducted by inserting BCuP-5 filler metal (Ag-Cu-P alloy) layer between Ag coated W-Ag and Cu substrate and annealing at $710^{\circ}C$ in $H_2$ atmosphere. The optimum brazing temperature of $710^{\circ}C$ was semi-empirically calculated on the basis of the Cu atomic diffusion profile in Ag layer of commercial electric contact produced by the same brazing process. As a mechanical test of the electric contact after brazing treatment the adhesion strength between the electric contact and Cu substrate was measured using Instron. The microstructure and phase equilibrium study revealed that the sound interlayer structure was formed by relatively low brazing treatment at $710^{\circ}C$. Thin Ag electro-plated layer precoated on the electric contact ($3{\mu}m$ in thickness) is thought to be enough for high adhesion strength arid sound microstructure in interface layer.

• 한국결정성장학회지
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• 제11권6호
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• pp.274-284
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• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.98-99
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• 2008

To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) 1.9501 eV - ($8.79\times10^{-4}$ eV/K)$T^2$/(T + 250 K). After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag}$, $V_{Se}$, $Ag_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Carbon letters
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• 제16권4호
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• pp.247-254
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• 2015

To improve photocatalytic efficiency, graphene/Ag/TiO₂ nanotube catalyst was synthesized, and its surface characteristics and photocatalytic activity investigated. For deposition of Ag nanoparticles on the TiO₂ nanotubes, a polymer compound containing CH₃COOAg/poly(L-lactide) was utilized, and the silver particles were precipitated by reducing the silver ions during the annealing process. Graphene deposition on the Ag/TiO₂ nanotubes was achieved using an electrophoretic deposition process. Based on the dye degradation results, it was determined that the photocatalytic efficiency was significantly affected by deposition of silver particles and graphene on the TiO₂ catalyst. Highly efficient destruction of the dye was obtained with the new graphene/Ag/TiO₂ nanotube photocatalyst. This may be attributed to a synergistic effect of the graphene and Ag nanoparticles on the TiO₂ nanotubes.

• 한국분말재료학회지
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• 제17권4호
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• pp.295-301
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• 2010

Multi shell graphite coated Ag nano particles with core/shell structure were successfully synthesized by pulsed wire evaporation (PWE) method. Ar and $CH_4$ (10 vol.%) gases were mixed in chamber, which played a role of carrier gas and reaction gas, respectively. Graphite layers on the surface of silver nano particles were coated indiscretely. However, the graphite layers are detached, when the particles are heated up to $250^{\circ}C$ in the air atmosphere. In contrast, the graphite coated layer was stable under Ar and $N_2$ atmosphere, though the core/shell structured particles were heated up to $800^{\circ}C$. The presence of graphite coated layer prevent agglomeration of nanoparticles during heat treatment. The dispersion stability of the carbon coated Ag nanoparticles was higher than those of pure Ag nanoparticles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.91-92
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• 2006

The important merit of Bi-2212/Ag wire is to apply cable as round wire state. Bi-2212 high Tc superconducting wires were fabricated in order to apply Rutherford cable near the future. Various Ag ratio from 0.22 to 0.42 of Ag tubes for PID (powder-In-Tube) process were used to investigate the workability and to prevent breakage of filaments during drawing. In order to find proper heat treatment condition, we investigated micro-structure of Bi-2212/Ag wires by using differential thermal analysis, XRD and SEM. The effect of atmosphere on the peritectic decomposition temperature of precursor was investigated. The shape of grain was observed by SEM to investigate Bi-2212 phase formation in filaments. The higher of Ag ratio of mono filament had the higher critical current density, Jc. The wire with 0.42 of Ag ratio showed 7,886 A/cm2 of Jc at 77K.

• 한국자기학회지
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• 제6권2호
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• pp.86-92
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• 1996

열진공증착 방법으로 제작한 Ag/Co 다층박막의 구조, 자성 및 자기저항에 관하여 연구하였다. Ag층의 두께가 $60{\AA}$ 정도로 두꺼울 때는 Co 두께가 $5{\AA}$에서도 비교적 균일한 다층막의 형태를 이루어서 대부분의 Co층이 강자성의 성질을 가지나 Ag층의 두께가 $30{\AA}$으로 얇고 Co가 $15{\AA}$ 이하일 경우에는 Co층이 섬형화된 불연속 다층박막이 형성되어 섬형화된 많은 부분의 Co가 초상자성 성질을 가졌다. 또한 열처리에 의하여 Co의 섬형화가 진전되어 MR비가 증가 되었다. $3000{\AA}$ 두께의 $Ag30{\AA}/Co10{\AA}$ 불연속 다층박막에서 최대 6.1%의 자기저항비를 얻었으며 SiO를 하지층으로 입힐 경우 $1000{\AA}$ 다층박막에서 층상 구조의 개선으로 반강자성 결합 및 자기저항비가 증가되었다.