• Journal of Magnetics
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• v.14 no.1
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• pp.31-35
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• 2009

Herein, the Magneto-Optical Kerr Effect (MOKE) signal enhancement in nanostructures in investigated. It is well known that the MOKE signals of ferromagnetic thin films are enhanced with an additional dielectric layer due to multiple reflections. The MOKE signal is modulated with the additional dielectric layer thickness and is at a maximum when reflectivity is at a minimum. This is not always true in the nanostructures due to the contribution from the non-magnetic substrate portion, especially when substrate reflectivity is minimized and the dependence of the additional dielectric layer thickness for the nanostructure is changed in the case of the continuous thin film. We showed that the MOKE signal for nanostructures could be enhanced with a properly designed, dielectric layer in addition to the anti-reflection coated substrates.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.32-36
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• 2021

The number of processes in the manufacture of semiconductors, displays and solar cells is increasing. And as the processes is performed, multiple layers of films and various patterns are formed on the wafer. At this time, substrate warpage occurs due to the difference in stress between each film and pattern formed on the wafer. the substrate warping phenomenon occurs due to the difference in stress between each film and pattern formed on the wafer. We developed a new warpage measurement method to measure wafer warpage during real-time processing. We performed an experiment to measure the presence and degree of warpage of the substrate in real time during the process by adding only measurement equipment for applying additional electrical signals to the existing ESC and detecting the change of the additional electric signal. The additional electrical measurement signal applied at this time is very small compared to the direct current (DC) power applied to the electrostatic chuck whit a frequency that is not generally used in the process can be selectively used. It was confirmed that the measurement of substrate warpage can be easily separated from other power sources without affecting.

• Progress in Superconductivity and Cryogenics
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• v.15 no.2
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• pp.29-33
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• 2013

The understanding of the strain dependence of critical current, $I_c$, in the reversible region is important for the evaluation of the performance of coated conductor (CC) tapes in practical applications. In this study, the stress/strain tolerance of $I_c$ in GdBCO CC tapes with stainless steel substrate stabilized by additional Cu and brass laminate was analyzed quantitatively through $I_c$-strain measurement at 77 K under self-field. The variation in irreversible strain limits of CC tapes by the addition of stabilizing layers was analyzed through the consideration of the pre-strain induced on the GdBCO coating film. The results were then compared with the ones previously reported for GdBCO CC tapes with Hastelloy substrate. As a result, GdBCO CC tapes with stainless steel substrate showed much higher strain tolerance of $I_c$ as compared with those adopting Hastelloy substrate.

• Journal of Sensor Science and Technology
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• v.24 no.3
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• pp.159-164
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• 2015

Solid state electrochemical and chemo-resistive gas sensors have been used widely but can operate only under high temperature. For reducing the power consumption and optimizing the structure of the substrate of these sensors, we conducted device and circuit simulations using the COMSOL Multiphysics simulator. For assessing the effective types of substrate and heat isolation, we conducted three-dimensional thermal simulations in two separate parts; (a) by changing the shape of the contacting holes and (b) punching additional holes on the substrate. Thus, it was possible to achieve high temperature in the sensor end of the substrate while maintaining low power consumption, and temperature in the circuit.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.382-386
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• 2014

The knowledge of substrate material properties is important in antenna design. We present a technique to accurately characterize the dielectric constant and loss tangent of an antenna substrate based on the measurements of antenna's reflection coefficient and bandwidth. In this technique, an error function is formulated by combinations of the reflection coefficient and bandwidth of measured and simulated data, and then an optimization technique is used to efficiently search for the substrate properties that minimize the error function. The results show that the method is effective in retrieving the dielectric constant and loss tangent of the antenna substrate without the need of additional test fixtures as in conventional substrate characterization methods.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1260-1261
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• 2008

Aluminium doped zinc oxide (ZnO:Al) thin film has emerged as one of the most promising transparent conducting electrode in flat panel displays(FPD) and in photovoltaic devices since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r.f. magnetron sputtering method. Wide ranges of bias voltage, -30V${\sim}$45V, was applied to the growing films as an additional energy instead of substrate heating, and the effect of positive and negative bias on the film structure and electrical properties of ZnO:Al films was studied and discussed. The results showed that a bias applied to the substrate during sputtering contributed to the improvement of electrical properties of the film by attracting ions and electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO film on the substrate, resulting in significant variations in film structure and electrical properties. The film deposited on the PET substrate at r. f. discharge power of 200 W showed the minimum resistivity of about $2.4{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 87%.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.173-178
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• 2012

Using accurate MOSFET substrate parameters obtained by a RF direct extraction method, it is demonstrated that a BSIM4 model with only substrate resistances is not physically valid to apply in the wide range of gate length because of scaling inaccuracy. In order to remove the unphysical problem of the BSIM4, a modified BSIM4 model with additional dielectric substrate capacitance is used and its physical validity is verified by observing excellent gate length scalability.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.641-644
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• 2008

Traditional LTPS TFT needs additional LDD process to decrease leakage current. However the fabrication process is no suitable for PI substrate. Additional laser multi-irradiation will damage the poly-Si to cause the TFT electrical degrade. Therefore we propose the simplified process to activate the $N^+$ and $N^-$ at the same time.

• Korean Journal of Optics and Photonics
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• v.8 no.5
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• pp.431-437
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• 1997

A gradient-index (GRIN) substrate is proposed as a novel signal propagation medium of planar optics. The GRIN substrate provides planar-optics designers not only a 3-dimensional signal propagation space, but also an additional smart optical functioning component like as a diffraction-limited imaging lens. The novel and smart functioning of the GRIN substrate was confirmed by experiment on imaging of an input signal to multiple destinations.

• Carbon letters
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• v.14 no.3
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• pp.145-151
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• 2013

Graphene is a fascinating material with excellent electrical, optical, mechanical, and chemical properties. Remarkable progress has been made in the development of methods for synthesizing large-area, high-quality graphene. Recently, the chemical vapor deposition method has opened up the possibility of using graphene for electronic devices and other applications. This review covers simple and inexpensive methods to grow graphene using polymers as solid carbon sources; which do not require an additional process to transfer graphene from the growth substrate to the receiver substrate.