• Title/Summary/Keyword: Active diode

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TEM Observations on the Blue-green Laser Diode (청녹색 레이저 다이오드 구조에 관한 TEM 관찰)

  • Lee, Hwack-Joo;Ryu, Hyun;Park, Hae-Sung;Kim, Tae-Il
    • Applied Microscopy
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    • v.27 no.3
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    • pp.257-263
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    • 1997
  • Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.

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Design and Simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH Quantum Dot Laser Diode

  • Chan, Trevor;Son, Sung-Hun;Kim, Kyoung-Chan;Kim, Tae-Geun
    • Journal of the Optical Society of Korea
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    • v.15 no.2
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    • pp.124-127
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    • 2011
  • Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.

External Feedback Effects on the Relative Intensity Noise Characteristics of InAIGaN Blue Laser Diodes

  • Cho Hyung-Uk;Yi Jong-Chang
    • Journal of the Optical Society of Korea
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    • v.10 no.2
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    • pp.86-90
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    • 2006
  • The external feedback effect on the relative intensity noise (RIN) characteristics of blue InAlGaN laser diode has been analyzed taking into account the spontaneous emission noise and the injection current for the high frequency modulation. A Langevin diffusion model was exploited to characterize its relative intensity noise. The simulation parameters were quantitatively evaluated from the optical gain properties of the InAlGaN multiple quantum well active regions by using the multiband Hamiltonian for the strained wurtzite crystals. The extracted parameters were then applied to the rate equations taking into account the external feedback and the high frequency modulation current. The RIN characteristics were investigated to optimize the low frequency laser diode noise characteristics.

Implementation of the Variable Output Laser Diode Driver Synchronized with a Pulse Repetition Frequency Code (펄스 반복 주파수 코드에 동기된 출력 가변형 레이저 다이오드 드라이버 구현)

  • Lee, Young-Ju;Kim, Yong-Pyung
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.5
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    • pp.746-750
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    • 2015
  • In this paper, we propose a simulator to evaluate the performance of the semi-active laser guidance or the quadrant photodetector and to simulate the laser power reflected from a target. The laser pulse repetition frequency was generated and synchronized with the laser pulse repetition(PRF) code. To evaluate the performances of the proposed methods, we implemented a prototype system and performed experiments. As a result, the generated high voltage was variable in the range of DC 3V to 340V and has the rate of change of 2000 V/s. PRF code can be generated within 50ms ∼ 100ms and the error is implemented within 0.3ns. The laser output is synchronized with the PRF code and has a dynamic range of 23.6dB.

Boost Type ZVS-PWM Chopper-Fed DC-DC Power Converter with Load-Side Auxiliary Resonant Snubber and Its Performance Evaluations

  • Ogura, Koki;Chandhaket, Srawouth;Ahmed, Tarek;Nakaoka, Mutsuo
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • v.3B no.3
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    • pp.147-154
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    • 2003
  • This paper presents a high-frequency boost type ZVS-PWM chopper-fed DC-DC power converter with a single active auxiliary edge-resonant snubber at the load stage which can be designed for power conditioners such as solar photovoltaic generation, fuel cell generation, battery and super capacitor energy storages. Its principle operation in steady-state is described in addition to a prototype setup. The experimental results of boost type ZVS-PWM chopper proposed here, are evaluated and verified with a practical design model in terms of its switching voltage and current waveforms, the switching v-i trajectory and the temperature performance of IGBT module, the actual power conversion efficiency, and the EMI of radiated and conducted emissions, and then discussed and compared with the hard switching scheme from an experimental point of view. Finally, this paper proposes a practical method to suppress parasitic oscillation due to the active auxiliary resonant switch at ZCS turn-off mode transition with the aid of an additional lossless clamping diode loop, and can be reduced the EMI conducted emission.

Hybrid polymer-quantum dot based single active layer structured multi-functional device (Organic Bistable Device, LED and Photovoltaic Cell)

  • Son, Dong-Ick;Kwon, Byoung-Wook;Park, Dong-Hee;Kim, Tae-Whan;Choi, Won-Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.97-97
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    • 2010
  • We demonstrate the hybrid polymer-quantum dot based multi-functional device (Organic bistable devices, Light-emitting diode, and Photovoltaic cell) with a single active-layer structure consisting of CdSe/ZnS semiconductor quantum-dots (QDs) dispersed in a poly N-vinylcarbazole (PVK) and 1,3,5-tirs- (N-phenylbenzimidazol-2-yl) benzene (TPBi) fabricated on indium-tin-oxide (ITO)/glass substrate by using a simple spin coating technique. The multi-functionality of the device as Organic bistable device (OBD), Light Emitting Diode (LED), and Photovoltaic cell can be successfully achieved by adding an electron transport layer (ETL) TPBi to OBD for attaining the functions of LED and Photovoltaic cell in which the lowest unoccupied molecular orbital (LUMO) level of TPBi is positioned at the energy level between the conduction band of CdSe/ZnS and LiF/Al electrode (band-gap engineering). Through transmission electron microscopy (TEM) study, the active layer of the device has a p-i-n structure of a consolidated core-shell structure in which semiconductor QDs are uniformly and isotropically adsorbed on the surface of a p-type polymer core and the n-type small molecular organic materials surround the semiconductor QDs.

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New Reference Generation for a Single-Phase Active Power Filter to Improve Steady State Performance

  • Lee, Ji-Heon;Jeong, Jong-Kyou;Han, Byung-Moon;Bae, Byung-Yeol
    • Journal of Power Electronics
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    • v.10 no.4
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    • pp.412-418
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    • 2010
  • This paper proposes a new algorithm to generate a reference signal for an active power filter using a sliding-window FFT operation to improve the steady-state performance of the active power filter. In the proposed algorithm the sliding-window FFT operation is applied to the load current to generate the reference value for the compensating current. The magnitude and phase-angle for each order of harmonics are respectively averaged for 14 periods. Furthermore, the phase-angle delay for each order of harmonics passing through the controller is corrected in advance to improve the compensation performance. The steady-state and transient performance of the proposed algorithm was verified through computer simulations and experimental work with a hardware prototype. A single-phase active power filter with the proposed algorithm can offer a reduction in THD from 75% to 4% when it is applied to a non-linear load composed of a diode bridge and a RC circuit. The active power filter with the proposed reference generation method shows accurate harmonic compensation performance compared with previously developed methods, in which the THD of source current is higher than 5%.

Utilization of Active Diodes in Self-powered Sensorless Three-phase Boost-rectifiers for Energy Harvesting Applications

  • Tapia-Hernandez, Alejandro;Ponce-Silva, Mario;Olivares-Peregrino, Victor Hugo;Valdez-Resendiz, Jesus Elias;Hernandez-Gonzalez, Leobardo
    • Journal of Power Electronics
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    • v.17 no.4
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    • pp.1117-1126
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    • 2017
  • The main contribution of this paper is the use of sensorless active diodes to generate the gate signals for a three-phase boost-rectifier with a self-powered control scheme. The sensorless operation is achieved making use of the gate control signals generated by the active diode schemes on each of the switching devices using a pulse width half-controlled boost rectifier modulation technique (PWM-HCBR). The proposed scheme synchronizes the gate control signals with a three phase voltage supply. Autonomous operation is obtained making use of the output DC bus to feed the control circuitry, the active diodes and the driver circuitry. The three-phase boost-rectifier is supplied by a three-phase permanent magnet electric generator powered by a solar concentrator dish with variable voltage and variable frequency conditions. Experimental results report an efficiency of up to 94.6% for 25 W and an input of 3.6 V peak per phase with 450.

A Study on PFC of Active Clamp ZVS Flyback Converter (능동 클램프 ZVS 플라이백 컨버터의 역률개선에 관한 연구)

  • 최태영;류동균;이우석;안정준;원충연;김수석
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.15 no.6
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    • pp.49-57
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    • 2001
  • This paper analyzed PFC of active clamp ZVS flybark converter by adding two method PFC (Power Factor Correction) circuit-two-stage and single-stage. The addition of active clamp circuit also provide a mechanism fur achieving ZVS of both the primary and auxiliary switches. ZVS also limits the turn off di/dt of the output rectifier, reducing rectifier switching loss and switching noise, due to diode reverse recovery. As a results, the proposed converters have characteristics of the reduced switching noise and high efficiency in comparison to conventional flyback converter. The simulation and experimental results show that the proposed converters improve the input PF of 300[W] ZVS flyback converter by adding single-stage two-stage PFC circuit.

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Active-Clamp AC-DC Converter with Direct Power Conversion (직접전력변환 방식을 이용한 능동 클램프 AC-DC 컨버터)

  • Cho, Yong-Won;Kwon, Bong-Hwan
    • The Transactions of the Korean Institute of Power Electronics
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    • v.17 no.3
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    • pp.230-237
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    • 2012
  • This paper proposes an active-clamp ac-dc converter with direct power conversion that has a simple structure and achieves high efficiency. The proposed converter is derived by integrating the step-down ac chopper and the output-voltage doubler. The proposed converter provides direct ac-dc conversion and dc output voltage without using any full-bridge diode rectifier. The step-down ac chopper using an active-clamp mechanism serves to clamp the voltage spike across the main switches and provides zero-voltage turn-on switching. The resonant-current path formed by the leakage inductance of the transformer and the resonant capacitor of the output-voltage doubler achieves the zero-current turn-off switching of the output diodes. The operation principle of the converter is analyzed and verified. A 500W prototype is implemented to show the performance of the proposed converter. The prototype provides maximum efficiency of 95.1% at the full load.