• Title/Summary/Keyword: Active Power Control

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Analysis and Compensation of Current Measurement Errors in a Doubly Fed Induction Generator

  • Son, Yung-Deug;Im, Won-Sang;Park, Han-Seok;Kim, Jang-Mok
    • Journal of Electrical Engineering and Technology
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    • v.9 no.2
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    • pp.532-540
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    • 2014
  • It is necessary to measure the current of rotor for controlling the active and reactive power generated by the stator side of the doubly fed induction generator (DFIG) system. There are offset and scaling errors in the current measurement. The offset and scaling errors cause one and two times current ripples of slip frequency in the synchronous reference frame of vector control, respectively. This paper proposes a compensation method to reduce their ripples. The stator current is variable according to the wind force but the rotor current is almost constant. Therefore input of the rotor current is more useful for a compensation method. The proposed method adopts the synchronous d-axis current of the rotor as the input signal for compensation. The ripples of the measurement errors can be calculated by integrating the synchronous d-axis stator current. The calculated errors are added to the reference current of rotor as input of the current regulator, then the ripples are reduced. Experimental results show the effectiveness of the proposed method.

Ship Motion-Based Prediction of Damage Locations Using Bidirectional Long Short-Term Memory

  • Son, Hye-young;Kim, Gi-yong;Kang, Hee-jin;Choi, Jin;Lee, Dong-kon;Shin, Sung-chul
    • Journal of Ocean Engineering and Technology
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    • v.36 no.5
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    • pp.295-302
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    • 2022
  • The initial response to a marine accident can play a key role to minimize the accident. Therefore, various decision support systems have been developed using sensors, simulations, and active response equipment. In this study, we developed an algorithm to predict damage locations using ship motion data with bidirectional long short-term memory (BiLSTM), a type of recurrent neural network. To reflect the low frequency ship motion characteristics, 200 time-series data collected for 100 s were considered as input values. Heave, roll, and pitch were used as features for the prediction model. The F1-score of the BiLSTM model was 0.92; this was an improvement over the F1-score of 0.90 of a prior model. Furthermore, 53 of 75 locations of damage had an F1-score above 0.90. The model predicted the damage location with high accuracy, allowing for a quick initial response even if the ship did not have flood sensors. The model can be used as input data with high accuracy for a real-time progressive flooding simulator on board.

Effects of Vth adjustment ion implantation on Switching Characteristics of MCT(MOS Controlled Thyristor) (문턱전압 조절 이온주입에 따른 MCT (MOS Controlled Thyristor)의 스위칭 특성 연구)

  • Park, Kun-Sik;Cho, Doohyung;Won, Jong-Il;Kwak, Changsub
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.5
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    • pp.69-76
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    • 2016
  • Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

Design of Voltage Controlled Oscillator with High Reliability and Low Phase Noise (고신뢰성과 저위상잡음을 갖는 전압제어 발진기의 설계 및 제작)

  • Ryu Keun-Kwan
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.3 no.1 s.4
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    • pp.13-19
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    • 2004
  • The VCO(Voltage Controlled Oscillator) with low phase noise and high reliability is implemented using nonlinear design, and its phase noise characteristics are compared with that of Lesson's equation. The microstripline coupled with dielectric resonator is realized as a high impedance inverter to improve the phase noise, and the qualify factor of resonator circuit can be transferred to active device with the enhanced the loaded quality factor. The worst case and part stress analyses are achieved to obtain the high reliability of VCO. The developed VCO has the oscillating tuning factor of 0.56MHz/V for the control voltage range of 0$\~$12V This VCO requires the DC power of 160mW. The phase noise characteristics exhibit good performances of -96.51dBc/Hz @ 10KHz and -116.3dBc/Hz @ 100KHz, respectively. And, the output power of 7.33 dBm is measured.

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Image Edge Detector Based on Analog Correlator and Neighbor Pixels (아날로그 상관기와 인접픽셀 기반의 영상 윤곽선 검출기)

  • Lee, Sang-Jin;Oh, Kwang-Seok;Nam, Min-Ho;Cho, Kyoungrok
    • The Journal of the Korea Contents Association
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    • v.13 no.10
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    • pp.54-61
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    • 2013
  • This paper presents a simplified hardware based edge detection circuit which is based on an analog correlator combining with the neighbor pixels in CMOS image sensor. A pixel element of the edge detector consists of an active pixel sensor and an analog correlator circuit which connects two neighbor pixels. The edge detector shares a comparator on each column that the comparator decides an edge of the target pixel with an adjustable reference voltage. The circuit detects image edge from CIS directly that reduces area and power consumption 4 times and 20%, respectively, compared with the previous works. And also it has advantage to regulate sensitivity of the edge detection because the threshold value is able to control externally. The fabricated chip has 34% of fill factor and 0.9 ${\mu}W$ of power per a pixel under 0.18 ${\mu}m$ CMOS technology.

A Low Phase Noise Design of Voltage Controlled Dielectric Resonator Oscillator and Reliability Analysis (전압제어 유전체 공진 발진기의 저위상잡음 설계 및 신뢰도 분석)

  • Ryu Keun-Kwan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.9 no.2
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    • pp.408-414
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    • 2005
  • The VCDRO(Voltage Controlled Dielectric Resonate. Oscillator) with low phase noise is designed using nonlinear analysis, and its phase noise characteristics are compared with that of Lesson's equation. The microstripline coupled with dielectric resonator is realized as a high impedance inverter to improve the phase noise performance, and the quality factor of resonator circuit can be transferred to active device with the enhanced the loaded quality factor. The worst case and part stress analyses are achieved to obtain the high reliability of VCDRO and the reliability analysis is accomplished to estimate the probability of operation at the end of life. The developed VCDRO has the oscillating tuning factor of 0.56MHZ1V for the control voltage range of 0-l2V. This VCDRO requires the DC power of 136mW. The phase noise characteristics exhibit good performances of -94.18dBc/Hz (a)10KHz and -116.3dBc/Hz (a)100KHz. And, the output power over 7.33dBm is measured.

Effect of Harmonic Generation and Countermeasures (고조파발생에 따른 영향과 대책 연구)

  • Baek, Dong-Hyun
    • Fire Science and Engineering
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    • v.29 no.6
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    • pp.91-97
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    • 2015
  • Skyscrapers, large business buildings, and IT consumers use many appliances, and the electrical power stems can cause fires by overheating. This can result in damaged capacitors, lost data, rising ground potential, and communication obstacles from linear or nonlinear high frequency. To make sure of that we investigated 7 spots of a building, among which 6-spots were fair but the other one needed high frequency control. Spots 3, 6, and 7 needed diagnostic workup, and spots 2, 3, and 5 considered 5 high frequency currents. A phase is all of good but the high frequency current is greater than the standard level except for spot 1. As a result, a zigzag transformer or active filter needs to be installed, and the efficiency needs to be upgraded by investigating load unbalance factors and power factors.

A High Speed CMOS Arrayed Optical Transmitter for WPON Applications (WPON 응용을 위한 고속 CMOS어레이 광트랜스미터)

  • Yang, Choong-Reol;Lee, Sang-Soo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.38B no.6
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    • pp.427-434
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    • 2013
  • In this paper, the design and layout of a 2.5 Gbps arrayed VCSEL driver for optical transceiver having arrayed multi-channel of integrating module is confirmed. In this paper, a 4 channel 2.5 Gbps VCSEL (vertical cavity surface emitting laser) driver array with automatic optical power control is implemented using $0.18{\mu}m$ CMOS process technology that drives a $1550{\mu}m$ high speed VCSEL used in optical transceiver. To enhance the bandwidth of the optical transmitter, active feedback amplifier with negative capacitance compensation is exploited. We report a distinct improvement in bandwidth, voltage gain and operation stability at 2.5Gbps data rate in comparison with existing topology. The 4-CH chip consumes only 140 mW of DC power at a single 1.8V supply under the maximum modulation and bias currents, and occupies the die area of $850{\mu}m{\times}1,690{\mu}m$ excluding bonding pads.

ALD-assisted Hybrid Processes for improved Corrosion Resistance of Hard coatings

  • Wan, Zhixin;Kwon, Se-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.105-105
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    • 2016
  • Recently, high power impulse magnetron sputtering (HIPIMS) has attracted considerable attentions due to its high potential for industrial applications. By pulsing the sputtering target with high power density and short duration pulses, a high plasma density and high ionization of the sputtered species can be obtained. HIPIMS has exhibited several merits such as increased coating density, good adhesion, microparticle-free and smooth surface, which make the HIPIMS technique desirable for synthesizing hard coatings. However, hard coatings present intrinsic defects (columnar structures, pinholes, pores, discontinuities) which can affect the corrosion behavior, especially when substrates are active alloys like steel or in a wear-corrosion process. Atomic layer deposition (ALD), a CVD derived method with a broad spectrum of applications, has shown great potential for corrosion protection of high-precision metallic parts or systems. In ALD deposition, the growth proceeds through cyclic repetition of self-limiting surface reactions, which leads to the thin films possess high quality, low defect density, uniformity, low-temperature processing and exquisite thickness control. These merits make ALD an ideal candidate for the fabrication of excellent oxide barrier layer which can block the pinhole and other defects left in the coating structure to improve the corrosion protection of hard coatings. In this work, CrN/Al2O3/CrN multilayered coatings were synthesized by a hybrid process of HIPIMS and ALD techniques, aiming to improve the CrN hard coating properties. The influence of the Al2O3 interlayer addition, the thickness and intercalation position of the Al2O3 layer in the coatings on the microstructure, surface roughness, mechanical properties and corrosion behaviors were investigated. The results indicated that the dense Al2O3 interlayer addition by ALD lead to a significant decrease of the average grain size and surface roughness and greatly improved the mechanical properties and corrosion resistance of the CrN coatings. The thickness increase of the Al2O3 layer and intercalation position change to near the coating surface resulted in improved mechanical properties and corrosion resistance. The mechanism can be explained by that the dense Al2O3 interlayer acted as an excellent barrier for dislocation motion and diffusion of the corrosive substance.

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Transceiver IC for CMOS 65nm 1-channel Beamformer of X/Ku band (X/Ku 대역 CMOS 65nm 단일 채널 빔포머 송수신기 IC )

  • Jaejin Kim;Yunghun Kim;Sanghun Lee;Byeong-Cheol Park;Seongjin Mun
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.24 no.4
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    • pp.43-47
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    • 2024
  • This paper introduces a phased-array single-channel transceiver beamformer IC built using 65nm CMOS technology, covering the 8-16 GHz range and targeting the X and Ku bands for radar and satellite communications. Each signal path in the IC features a low noise amplifier (LNA), power amplifier (PA), phase shifter (PS), and variable gain amplifier (VGA), which allow for phase and gain adjustments essential for beam steering and tapering control in typical beamforming systems. Test results show that the phase-compensated VGA offers a gain range of 15 dB with 0.25 dB increments and an RMS gain error of 0.27 dB. The active vector modulator phase shifter delivers a 360° phase range with 2.8125° steps and an RMS phase error of 3.5°.