• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.493-493
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• 2014

The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

• Journal of Microbiology and Biotechnology
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• v.30 no.5
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• pp.689-699
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• 2020

Brevibacillus brevis GZDF3 is a gram-positive, plant growth-promoting rhizosphere bacterium (PGPR) isolated from the rhizosphere soil of Pinellia ternata (an important herb in traditional Chinese medicine). The GZDF3 strain produces certain active compounds, such as siderophores, which are the final metabolite products of non-ribosomal peptide synthetase (NRPS) and independent non-ribosomal peptide synthetase (NIS) activity. With the present study, we attempted to investigate the siderophore production characteristics and conditions of Bacillus sp. GZDF3. The antibacterial activity of the siderophores on pathogenic fungi was also investigated. Optimal conditions for the synthesis of siderophores were determined by single factor method, using sucrose 15 g/l, asparagine 2 g/l, 32℃, and 48 h. The optimized sucrose asparagine medium significantly increased the production of siderophores, from 27.09% to 54.99%. Moreover, the effects of different kinds of metal ions on siderophore production were explored here. We found that Fe³⁺ and Cu²⁺ significantly inhibited the synthesis of siderophores. The preliminary separation and purification of siderophores by immobilized-metal affinity chromatography (IMAC) provides strong antibacterial activity against Candida albicans. The synergistic effect of siderophores and amphotericin B was also demonstrated. Our results have shown that the GZDF3 strain could produce a large amount of siderophores with strong antagonistic activity, which is helpful in the development of new biological control agents.

• Applied Biological Chemistry
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• v.34 no.2
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• pp.168-173
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• 1991

The uptake of $Mn^{+2}$, a metal cofactor Mn-SOD, by rice seedings resulted in not only a substantial increase in SOD activity in leaf tissues of the plants, but also a significant enhancement of their cold tolerance : the relative extent of the cold tolerance appeared to accord with relative level of the SOD activity. In contrast, $Fe^{+3},\;Cu^{+2}$ and $Zn^{+2}$, which are the cofactors of Fe-SOD and Cu/Zn-SOD, were found to be ineffective for increasing the SOD activity as well as for improving the chilling-resistant capacity of the plants. The results suggest that Mn-SOD, which is most likely induced by its substrate(superoxide) and activated by the presence of $Mn^{+2}$a at high level, is the enzyme acting as an active component of the defense system against low temperature stress in rice plants. In addition, the application of abscisic acid which has been know to protect to some extent certain plants from chilling injury brought about an increase in SOD activity in rice tissues, providing another affirmative information for the crucial role of SOD under the circumstance of cold stress in plants.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• Applied Chemistry for Engineering
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• v.18 no.5
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• pp.467-474
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• 2007

The palladium and gold nanoparticles containing PAN-based active carbon fiber (ACF) with a high specific surface area were prepared. Using the BET, TEM, FE-SEM, and XPS, their specific surface area and pore volume, pore structure, and the change in surface oxygen groups with time were analyzed and $SO_2$ adsorption performances were investigated. Because of the impregnating process, the micropore volume was mostly decreased from 95.5% to 30.5~43.7% compared with the total pore volume. And the change in surface oxygen groups with time was higher for the metal salt than the nanoparticles. Also, $SO_2$ breakthrough time of PAN-ACFs impregnated with Au nanoparticles and metal salts did not change compared with that of the non-impregnated PAN-ACF. But the PAN-ACF impregnated with Pd nanoparticles (100 ppm) showed good $SO_2$ adsorption performance as the breakthrough time of 880 sec. These results indicated that the $SO_2$ adsorption performance depended on the change in surface oxygen groups with time and the moderate impregnation of Pd nanoparticles on the PAN-ACF caused the increase in the $SO_2$ adsorption performance by a catalytic action.

• Applied Chemistry for Engineering
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• v.9 no.4
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• pp.497-503
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• 1998

The catalytic oxidation of 1.2-dichloroethane was investigated over precious metal supported on alumina using a fixed bed microreactor. Among the catalysts tested, the conversion of 1.2-dichloroethane decreased in the following order : Ru > Pt > Pd $${\sim_=}$$ Rh and Pt was found to be the most active catalyst for the complete oxidation of 1.2-dichloroethane to $CO_2$. Major products containing carbon were vinyl chloride and $Co_2$ at temperature ranging from 200 to $400^{\circ}C$. The presence of vinyl chloride in products suggests that the first step in the oxidation of 1.2-dichloroethane is dehydrochlorination and the second is oxidation of vinyl chloride to $CO_2$. To investigate the effect of HCl on the activity of the complete oxidation, some experiments were conducted by adding HCl to the feed. The presence of HCl increased the conversion of 1.2-dichloroethane below $300^{\circ}C$ owing to the increase of surface acidity, but it didn't affect the conversion above $300^{\circ}C$. The reversible adsorption of HCl onto catalyst surface inhibited the complete oxidation to $CO_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.588-588
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• 2013

Nanoscale noble-metals have attracted enormous attention from researchers in various fields of study because of their unusual optical properties as well as novel chemical properties. They have possible uses in diverse applications such as devices, transistors, optoelectronics, information storages, and energy converters. It is well-known that nanoparticles of noble-metals such as silver and gold show strong absorption bands in the visible region due to their surface-plasmon oscillation modes of conductive electrons. Silver nanocubes stand out from various types of Silver nanostructures (e.g., spheres, rods, bars, belts, and wires) due to their superior performance in a range of applications involvinglocalized surface plasmon resonance, surface-enhanced Raman scattering, and biosensing. In addition, extensive efforts have been devoted to the investigation of Gold-based nanocomposites to achieve high catalytic performances and utilization efficiencies. Furthermore, as the catalytic reactivity of Silver nanostructures depends highly on their morphology, hollow Gold nanoparticles having void interiors may offer additional catalytic advantages due to their increased surface areas. Especially, hollow nanospheres possess structurally tunable features such as shell thickness, interior cavity size, and chemical composition, leading to relatively high surface areas, low densities, and reduced costs compared with their solid counterparts. Thus, hollow-structured noblemetal nanoparticles can be applied to nanometer-sized chemical reactors, efficient catalysts, energy-storage media, and small containers to encapsulate multi-functional active materials. Silver nanocubes dispersed in water have been transformed into Ag@Au nanoboxes, which show highly enhanced catalytic properties, by adding $HAuCl_4$. By using this concept, $SiO_2$-coated Ag@Au nanoboxes have been synthesized via galvanic replacement of $SiO_2$-coated Ag nanocubes. They have lower catalytic ability but more stability than Ag@Au nanoboxes do. Thus, they could be recycled. $SiO_2$-coated Ag@Au nanoboxes have been found to catalyze the degradation of 4-nitrophenol efficiently in the presence of $NaBH_4$. By changing the amount of the added noble metal salt to control the molar ratio Au to Ag, we could tune the catalytic properties of the nanostructures in the reduction of the dyes. The catalytic ability of $SiO_2$-coated Ag@Au nanoboxes has been found to be much more efficient than $SiO_2$-coated Ag nanocubes. Catalytic performances were affected noteworthily by the metals, sizes, and shapes of noble-metal nanostructures.

• Korean Journal of Food Science and Technology
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• v.22 no.1
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• pp.13-18
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• 1990

Crude lipase activator (L. Activator) was extracted with 0.85M NaCl solution from green pepper, Capsicum annuun Lin and then fractionated by 0.2 saturation with ammonium sulfate. The activity of crude L. Activator preparation $(OD_{280}=1.0)$ had proportional relation with its added amounts below 1.0ml. The L.Activator showed optimum temperature at $35^{\circ}C$. The L.Activator was very stable at the temperatures below $50^{\circ}C$ and at pH range of $7{\sim}9$, and its activities also remained 60% even at $100^{\circ}C$, 72% at pH 3, and 85% at pH 10, respectively. The activities of L.Activator decreased by most metal ions besides $Na^+,\;Mg^{++},\;and\;Ca^{++}$. The decreasing effects of heavy metal ions such as $Ag^+\;and\;Hg^{++}$ on L.Activator activity were not, however, so great as compared with the commonly known great effects of them on most enzyme activity. Crude L.Activator was separated into 4 peaks by the cellulofine column chromatography and the main active peak of L.Activator seemed to be contained in the same components as those of the activatory peak from crude L.Inhibitor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.149-155
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• 2015

This paper proposes 5-MS/s 10-bit digital-to-analog converter(DAC) with the improved linearity. The proposed DAC consists of a 10-bit R-2R-based DAC, an output buffer using a differential voltage amplifier with rail-to-rail input range, and a band-gap reference circuit for the bias voltage. The linearity of the 10-bit R-2R DAC is improved as the resistor of 2R is implemented by including the turn-on resistance of an inverter for a switch. The output voltage range of the DAC is determined to be $2/3{\times}VDD$ from an rail-to-rail output voltage range of the R-2R DAC using a differential voltage amplifier in the output buffer. The proposed DAC is implemented using a 1-poly 8-metal 130nm CMOS process with 1.2-V supply. The measured dynamic performance of the implemented DAC are the ENOB of 9.4 bit, SNDR of 58 dB, and SFDR of 63 dBc. The measured DNL and INL are less than +/-0.35 LSB. The area and power consumption of DAC are $642.9{\times}366.6{\mu}m^2$ and 2.95 mW, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.