• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.213-221
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• 1998

$BaCe_{0.9}Gd_{0.1_O_{2.95}$ powder was synthesized by oxalate coprecipitation method. Precipitate with a stoichimetric ratio of the cations was prepared by adding a mixture of Ba, Ce and Gd nitrate solution to an oxalic acid solution at pH 4. Reaction between the constituent oxides to form a perovskite phase was initiated at $800^{\circ}C$ and a single phase $BaCe_{0.9}Gd_{0.1_O_{2.95}$ powder having good sinterability was obtained after calcination at $1000^{\circ}C$. Sintering green compacts of this powder for 6 h showed a considerable densification to start at $1100^{\circ}C$ and resulted in 93% and 97% relative densities at $1300^{\circ}$ and at $1450^{\circ}C$, respectively. Whereas the power compacts prepared by solid state reaction had lower relative densities, 78% at $1300^{\circ}$and 90% at $1450^{\circ}C$. Fine particles of $CeO_2$ second phase were observed in the surface of the sintered compacts. This was attributed to the evaporation of BaO from the surface that had been exposed during thermal etching.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.58-61
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• 2012

In our report a relatively simple process for fast nano-texturing of p-type(100) CZ- silicon surface using silver catalyzed wet chemical etching in aqueous hydrofluoric acid (HF) and hydrogen peroxide solution($H_2O_2$) at room temperature. The wafers were saw-damaged by NaOH(6 wt%) at $60^{\circ}C$ for 150s. To obtain a nano-structured black surface, a thin layer of silver with thickness of 1 - 10 nm was deposited on the surfaces by evaporation system. After this process the samples were etched in HF : $H_2O_2$ : $H_2O$ = 1:5:10 at room temperature for 80s - 220s. Due to the local catalytic of the Ag clusters, this treatment results in the nano-scale texturing on the surface. This resulted in average reflectance values less than 9% after the silver on the surface of the wafers were removed.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.871-875
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• 1998

High aspect ratio microstructures were fabricated by photolithography. The material for the microstructure was photosensitive glass which has good mechanical and electrical insulation properties. The photosensitive glass was exposed to ultraviolet light at 312nm through a chromium mask in which the structures are drawn. After heat treatment process over $500^{\circ}C$, the photosensitive glass was etched in a 10% hydrofluoric acid solution with ultrasonic conditions. Final dimension of the micro-framework was greatly dependent on the thickness of photosensitive glass, mask pattern, ultraviolet light exposure and etching conditions. The maximum aspect ratio of the micro-framework obtained from this work was over 30.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.343-346
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• 2003

A systematic study of Cu CMP in terms of the effect of slurry chemicals(oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. In acidic media, a corrosion inhibitor, benzotriazole(BTA) and tolytriazol(TTA) was used to control the removal rate and avoid isotropic etching. When complexing agent is added with $H_2O_2$ 2wt% in the slurry, a corrosion rate was presented very good. Most of in, it was appeared that BTA is possible to be replaced by TTA. The tartaric acid was distinguished for the effect among complexing agents. n we apply this results to copper CMP process, it is thought that we will be able to obtain better yield.

• Journal of the Korean institute of surface engineering
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• v.42 no.1
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• pp.53-57
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• 2009

Recovery of heavy-metallic component from a waste solution of factory was undertaken by the solar cell electricity. The solution was obtained from an electrolytic etching process of 316L stainless steel. The electrolysis of the solution for recovery of heavy metallic components was made with platinum plated titanium mesh anode and copper plate cathode. Analysis for the solution and electro-winned materials were made by EDS, XRD and SEM. Iron, chromium, and sulfur components were recovered on the cathode from the solution. Result of EDS analysis for the electro-winned materials revealed that some metal oxide were contained in the recovered material. The recovered materials were expected to have metallic form only by the electrolysis, but metal compounds were contained because of weak solar cell power. Nickel and manganese component in the solution doesn't recovered by this electrolysis process, but they made a sludge with phosphoric acid in the solution.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.390-393
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• 2009

We report on a new patterning technique for organic functional materials applicable to organic photovoltacis (OPVs). The unconventioal patterning technique, $O_2$ plsama-etching selectively perfluoro-alkyl fluorosilanes, is used for producing a bulk-heterojunction active layer with poly(3-hexylthiophene) as the electron donor and [6,6]-phenyl-$C_{61}$ butyric acid methyl ester as the electron acceptor. The patterning with reduced leakage path and parasitic capacitance suggests a way for fabrication of OPVs with higher energy conversion efficiency.

• Korean Journal of Materials Research
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• v.14 no.6
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• pp.413-419
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• 2004

Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).

• Current Photovoltaic Research
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• v.6 no.1
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• pp.1-11
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• 2018

Current major photovoltaic (PV) market share (> 60%) is being occupied by the multicrystalline (mc)-silicon solar cells despite of low efficiency compared to single crystalline silicon solar cells. The diamond wire sawing technology reduces the production cost of crystalline silicon solar cells, it increases the optical loss for the existing mc-silicon solar cells and hence its efficiency is low in the current mass production line. To overcome the optical loss in the mc-crystalline silicon, caused by the diamond wire sawing, next generation texturing process is being investigated by various research groups for the PV industry. In this review, the limitation of surface structure and optical loss due to the reflectivity of conventional mc-silicon solar cells are explained by the typical texturing mechanism. Various texturing technologies that could minimize the optical loss of mc-silicon solar cells are explained. Finally, next generation texturing technology to survive in the fierce cost competition of photovoltaic market is discussed.

• Journal of Biomedical Engineering Research
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• v.16 no.4
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• pp.533-542
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• 1995

The present study investigated the effectiveness of pretreatment on dentin bonding. The adhesive resin was 5% 4-methacryloyloxyethyl trimellitate anhydride (4-META) in methyl methacrylate (MMA) combined with poly-MMA powder. Polymerization of this resin was initiated by tri-n-butyl borage (TBB). Ground bovine dentin samples were etched with either an aqueous solution of 10% citric (10-0 solution) (Group I) or aqueous solution of 10% citric acid and 3% ferric chloride(10-3 solution) (Group ll ). After etching, the primer (an aqueous solution of 35% hydroxyethyl methacrylate (HEM- A) and 5% glutaraldehyde was applied on the differently etched surfaces (Group III , Group IV). The 10-0 treatment showed the lowest tensile bond strength, followed by the 10-3 treatment, primer application after the 10-0 treatment and primer application after the 10-3 treatment. The relationship among the surface morphology after pretreatment, fractured surface morphology and tensile bond strength was examined. It revealed that the surface morphology change by different pretreatment influenced the bond strength and the resulting fractured surface morphology. The correlation of tensile bond strength with the fracture morphology was explained.

• Restorative Dentistry and Endodontics
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• v.26 no.2
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• pp.171-179
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• 2001

The purpose of this study was to evaluate the shear bond strength of compomers according to dentin surface treatment. Two materials of compomer were devided into six groups. The compomer used in this study were Dyract AP(D) and F2000(F), Group 1 (DN) and 4(FN) were treated according to manufacturers instructions as control groups. Group 2(DE) and 5(FE) were treated with 37％ phosphoric acid and group 3(DA) and 6(FA) were treated with air abrasion unit (80 psi, 50 m aluminum oxide particles) respectively as experimental groups. After dentin surface treatment, compomers were bonded. Completed samples were stored in 100％ humidity. 37C during 7 days, and then, the shear bond strength of specimens were evaluated. The results were as follows: 1. In the case of Dyract AP, the shear bond strength was showed the highest value of 9.10 MPa in dentin surface treatment with air abrasion unit. but there were no significant differences to the other groups. 2. In the case of F2000. the shear bond strength was showed the highest value of 13.51MPa and there were significant differences to the other groups(p<0.05). 3. The shear bond strength of F2000 was higher than Dyract AP in each dentin surface treatment. and in the case of etching and air abrasion. there were significant differences(p<0.05). 4. As a result of observation of SEM. the most of fracture pattern was adhesive failure in group 1(DN), 2(DE) and 4(FN), and cohesive failure in group 3(DA), S(FE) and 6(FA).