Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07a
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- Pages.343-346
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- 2003
Cu CMP Property by Addition of Corrosion Inhibitor and Complexing Agent
부식 방지제와 Complexing Agent 첨가에 따른 Cu CMP 특성
- Kim, In-Pyo (Chung-Ang Univ.) ;
- Kim, Nam-Hoon (Chung-Ang Univ.) ;
- Kim, Sang-Yong (Dongbu-Anam Semiconductor) ;
- Lee, Cheol-In (Ansan College of Technology) ;
- Eom, Joon-Cheol (Chung-Ang Univ.) ;
- Chang, Eui-Goo (Chung-Ang Univ.)
- Published : 2003.07.10
Abstract
A systematic study of Cu CMP in terms of the effect of slurry chemicals(oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. In acidic media, a corrosion inhibitor, benzotriazole(BTA) and tolytriazol(TTA) was used to control the removal rate and avoid isotropic etching. When complexing agent is added with