Cu CMP Property by Addition of Corrosion Inhibitor and Complexing Agent

부식 방지제와 Complexing Agent 첨가에 따른 Cu CMP 특성

A systematic study of Cu CMP in terms of the effect of slurry chemicals(oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. In acidic media, a corrosion inhibitor, benzotriazole(BTA) and tolytriazol(TTA) was used to control the removal rate and avoid isotropic etching. When complexing agent is added with $H_2O_2$ 2wt% in the slurry, a corrosion rate was presented very good. Most of in, it was appeared that BTA is possible to be replaced by TTA. The tartaric acid was distinguished for the effect among complexing agents. n we apply this results to copper CMP process, it is thought that we will be able to obtain better yield.