• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1284-1287
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• 2005

Peripheral pentacene region gives a significant influence on C-V characteristics of metal-oxide-pentacene capacitor structure. When the gate voltage goes toward negative, the effect of peripheral pentacene region becomes larger. Remaining gate DC bias constant and changing small signal frequency, the capacitance of peripheral pentacene changes along with frequency so that the total capacitance value also changes. The influence of peripheral pentacene region should be removed to measure accurate C-V characteristics, because it is hard to take into account the effect of the region quantitatively. After removing the influence of peripheral pentacene region, acceptor concentration, flat band voltage and depletion width of pentacene thin film are extracted from an accurate C-V curve as $1.58{\times}10^{17}cm^{-3}$, -1.54 V and 39.4 nm, respectively.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.542-550
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• 1996

ZnO-based ceramic varistors containing NiO range 0.5 mol% to 4.0 mol% were fabricated by standard ceramic techniques. The influence of NiO on the microstructure and electrical behavior of ZnO varistor was investigated. As the content of NiO additive increases, average grain size decreased from 16.5.mu.m to 13.2.mu.m, and the amount of NiO existing in the grain interior and grain boundary region was approximately equal. NiO acted as an acceptor which decreases donor concentration due to the increase of Zn vacancy in the grain, and as a driver which migrates Zn interstitial in the depletion region toward the interface of grain boundary, which resulted in the decrease of interface state density. As a result, increasing the content of NiO additive, barrier height, nonlinear exponent, and varistor voltage decreased, and leakage current increased. Wholly, the physical and electrical properties of the ZnO varistor can be said to be affected by the NiO additive.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.291-297
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• 1995

The InP crystals have been grown by modified synthesis solute diffusion (SSD) method and its properties have been investigated. The crystals have been grown by lowering the crucible quartz for growth in the furnace and crystal growth rate is 1.8mm/day. The lattice constant a. of the grown crystals is 5.867.angs.. Etch pits density along growth direction of crystal changes from 3.0*10.sup 3/cm$\^$-2/ of first freeze part to 6.7*10$\^$4/cm$\^$-2/ of last freeze part and the radial direction of wafer shows nearly uniform distribution. The resistivity and the carrier concentration of the grown crystals are 1.43*10$\^$-1/.ohm.-cm, 7.7*10$\^$15/cm$\^$-3/ at room temperature, respectively. In the photolurninescence at 10K, the radiation transitions are observed by the near band edge recombination, a pair recombination due to Si donor - Zn acceptor and its phonon replica in the InP. The activation energy by Zn diffusion in undoped n-InP crystals is 1.22eV.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.248-259
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• 2014

Acceptor-doped cerium pyrophosphates have shown significant proton conductivity of > $10^{-2}Scm^{-1}$ in the range of $100-300^{\circ}C$ and are considered promising candidates for use as electrolytes in proton-conducting, ceramic electrolyte fuel cells (PCFCs). But, cerium pyrophosphates themselves do not have structural protons, and protons incorporate into their material bulk only as impurities on exposure to a hydrogen-containing atmosphere. However, proton incorporation and proton conduction in these materials are expected to be affected by factors such as the nature (ionic size and charge) and concentration of the aliovalent dopant, processing history (synthesis route and microstructure), and the presence of residual phosphorous phosphate ($P_mO_n$) phases. An exact understanding of these aspects has not yet been achieved, leading to large differences in the magnitude of proton conductivity of cerium pyrophosphates reported in various studies. Herein, we systematically address some of these aspects, and present an overview of factors affecting proton conductivity inacceptor-doped $CeP_2O_7$.

• Journal of Korean Society on Water Environment
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• v.30 no.2
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• pp.220-225
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• 2014

A sequencing batch reactor (SBR) was operated to obtain thiosulfate-utilizing denitrifier cultivated with two types of electron accepter (nitrate and nitrite). Using the microbial biomass obtained from the SBR, batch tests were conducted with different nitrite concentrations (50 and 100 mg-N/L) at pH 7.0, 7.5 and 7.9 to see how free nitrous acid (FNA) negatively works on the thiosulfate-utilizing denitrification of nitrate. The specific denitrification rate (SDR) of nitrate was significantly influenced by pH and FNA. The presence of nitrite caused a remarked decrease of the SDR under low pH conditions, because of the microbiological inhibitory effect of FNA. The minimum SDR was observed when initial nitrite concentration was 100 mg-N/L at pH 7.0. Moreover. the SDR was influenced by the type of electron acceptor used during the SBR operation. Thiosulfate-utilizing denitrifier cultivated with nitrite showed smaller SDR on the thiosulfate-utilizing denitrification of nitrate than those cultivated with nitrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.67-70
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE). The GaN substrates, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 10${\times}$10 $\textrm{mm}^2$ area, were obtained by HVPE growth GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of c$\_$0/=5.18486 ${\AA}$ and a FWHM of DCXRD was 650 arcsec for the single crystalline freestanding GaN substrate. The low temperature PL spectrum consist of excitonic emission and deep donor to acceptor pair recombination at 1.8 eV. The Raman E$_2$ (high) mode frequency was 567 cm$\^$-1/ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283 $\textrm{cm}^2$/V$.$sec and 1.1${\times}$10$\^$18/ cm$\^$-3/, respectively. The freestanding and crack-free GaN single crystalline substrate suitable for the homoepitaxial growth of GaN, and the HVPE method are promising approaches for the preparation of large area, crack-free GaN substrates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1056-1061
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• 2007

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. The surface morphology was dramatically changed with varying the SiC/Al ratio. When the SiC/Al ratio of 90/1 was used, the step bunching was not observed in this magnification and the ratio of SiC/Al is an optimized range to grow of p-type SiC epitaxial layer. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. 4H-SiC MESFETs haying a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized. It was confirmed that the increase of the negative voltage applied on the gate reduced the drain current, showing normal operation of FET device.

• BMB Reports
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• v.38 no.3
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• pp.343-349
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• 2005

Gamma-glutamyltransferase (GGT, EC 2.3.2.2) which hydrolyzes glutathione (GSH), is required for the maintenance of normal intracellular GSH concentration. GGT is a membrane enzyme present in leukocytes and platelets. Its activity has also been observed in human neutrophils. In this study, GGT was purified from Triton X-100 solubilized neutrophils and its kinetic parameters were determined. For kinetic analyses of transpeptidation reaction, $\gamma$-glutamyl p-nitroanilide was used as the substrate and glycylglycine as the acceptor. Apparent $K_m$ values were determined as 1.8 mM for $\gamma$-glutamyl p-nitroanilide and 16.9 mM for glycylglycine. The optimum pH of GGT activity was 8.2 and the optimum temperature was $37^{\circ}C$. It had thermal stability with 58% relative activity at $56^{\circ}C$ for 30 min incubation. L-serine, in the presence of borate, was detected as the competetive inhibitor. Bromcresol green inhibited neutrophil GGT activity as a noncompetetive inhibitor. The neutrophils seem to contain only the isoenzyme that is present in platelets. We characterized the kinetic properties and compared the type of the isoenzyme of neutrophil GGT with platelet GGT via polyacrylamide gel electrophoresis (PAGE) under a standart set of conditions.

• Environmental Engineering Research
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• v.10 no.6
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• pp.283-293
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• 2005

Characteristics of sulfur-based autotrophic denitrification in a semi-continuous type reactor and the kinetic parameters were studied. Enriched autotrophic denitrifying culture was used for the reactor operation. Biomass growth on sulfur particles and in the liquid medium was monitored using the DAPI staining method. From the result of ion concentration changes and the biomass growth, maximum specific growth rate, ${\mu}_{max}$, and the half velocity constant, $K_M$, were estimated as $0.61\;d^{-1}$ and 3.66 mg/L, respectively. Growth yield coefficient, Y values for electron acceptor and donor were found as 0.49 gVSS/g N and 0.16 gVSS/g S. The biomass showed specific denitrification rate, ranging 0.86-1.13 gN/g VSS-d. A half-order equation was found to best simulate the denitrification process in the packed bed reactor operated in the semi-continuous mode.

• Solar Energy
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• v.20 no.1
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• pp.11-20
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• 2000

To get more insight into the buffering effects of the p-${\mu}c$-Si:H Inserted at the p-a-SiC:H/i-a-Si:H interface, we present a systematic numerical simulation using Gummel-Schafetter method. The reduced recombination loss at the p/i interface due to a constant bandgap buffer is analysed in terms of the variation of the p/i Interface region with a short lifetime and the characterisitics of the buffer such as mobility bandgap, acceptor concentration, and D-state density. The numerical modeling on the constant bandgap buffer demonstrates clearly that the buffering effects of the thin p-${\mu}c$-Si:H originate from the shrinkage of highly defective region with a short lifetime in the vicinity of the p/i interface.