• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.140-144
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• 1995

The role of Mn on the PTCR characteristics of La-doped BaTiO3 ceramics was studied. The calculated Ns value was increased with Mn concentration and consequently pmax and pmin were increased. The behavior of pmin was explained by the Jonker's theory, and Ns value of 6.35×1017m-2 was well agreed with the theoretical estimate of Jonker's. The value state of Mn was measured by ESR, and changed around Tc from ＋3 in tetragonal phase to ＋2 in cubic phase. Therefore, the amount of electron trap increased at Tc led to the great improvement of PTC R characteristics.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2002.09a
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• pp.161-166
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• 2002

Bioremediation of trace metals in groundwater may require the manipulation of redox conditions via the injection of a carbon source. To simulate the numerous biogeochemical processes that will occur during the bioremediation of trace-metal-contaminated aquifers, a reactive transport model has been developed. The model consists of a set of coupled mass balance equations, accounting for advection, hydrodynamic dispersion, and a kinetic formulation of the biological or chemical transformations affecting an organic substrate, electron acceptors, corresponding reduced species, and trace metal contaminants of interest, uranium in this study. The redox conditions of the domain are characterized by estimating the pE, based on the concentrations of the dominant terminal electron acceptor and its corresponding reduced specie. This pE and the concentrations of relevant species we then used by a modified version of MINTEQA2, which calculates the speciation/sorption and precipitation/dissolution of the species of interest under equilibrium conditions. Kinetics of precipitation/dissolution processes are described as being proportional to the difference between the actual and calculated equilibrium concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.99-100
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• 2009

탄화규소를 이용한 1200V급 MOSFET 소자 제작을 위하여 특성 simulation을 수행하였다. 1200V 내압을 얻기 위해서 불순물 농도가 5E15/cm3이고 에피층의 두께가 12um인 상용 탄화규소 웨이퍼를 기준으로 하였으며 채널 저항을 줄이기 위해 채널길이를 $0.5{\mu}m$로 하였다. 게이트전압이 13V, 드레인 전압이 4V에서 specific on-resistance 값은 $12m\;{\Omega}cm^2$로 매우 우수한 특성을 보이고 있다. P-body의 표면 농도를 5E16/cm3 에서 1E18/cm3으로 변화시키면서 소자의 전기적 특성을 예측하였으며 실험 결과와 비교하여 특성 변수를 추출하였다.

• 전기의세계
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• v.30 no.10
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• pp.645-654
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• 1981

A technique has been proposed for fabricating a submicron channel vertical V-groove JFET using standard photolithography. A finite element numerical simulation of the V-groove JFET operation was performed using a FORTRAN progrma run on a Cyber-174 computer. The numerical simulation predicts pentode like common source output characteristics for the p$^{+}$n Vertical V-groove JFET with maximum transconductance representing approximately 6 precent of the zero bias drain conductance value and markedly high drain conductance at large drain voltages. An increase in the acceptor concentration of the V-groove JFET gate was observed to cause a significant increase in the transconductance of the device. Therefore, as above mentioned, this paper is study on the analysis of a Vertical V-groove Junction Field Effect Transistor with Finite Element Method.d.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.785-787
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• 1988

The capacitance-voltage (C-V) chracteristics of thin nitrided thermal oxides prepared by rapid termal nitridation(RTN) have been studied. The threshold voltages were calculated using C-V measurement and found to vary as the concentration of acceptor and the thickness of oxynitride. When the Si02 films were annealed in NH3 a decrease in the positive oxide charge due to Si-N bond was observed. In the case applied frequency is high and low, the high frequency depletion capacitance was higher than that of low frequency, which is indicative of high frequency surface conduction by mobile surface charge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.210-211
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• 2008

탄화규소를 이용한 600V급 MOSFET 소자 제작을 위하여 특성 simulation을 수행하였다. 600V 내압을 얻기 위해서 불순물 농도가 1E16/cm3이고 에피층의 두께가 6um인 상용 탄회규소 웨이퍼를 기준으로 하였으며 TRIM simulation을 사용하여 P-body의 retrograde profile을 구하고 이를 이용하여 소자의 전기적 특성을 simulation 하였다. P-body의 표면 농도를 5E16/cm3 에서 1E18/cm3으로 변화시키면서 소자의 전기적 특성을 예측하였으며 실험 결과와 비교하여 특성 변수를 추출하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.417-420
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• 2004

The electrical effects of dry-etch on n-type GaN by an inductively coupled $Cl_2/CH_4/H_2/Ar$ plasma were investigated as a function of ion energy, by means of ohmic and Schottky metallization method. The specific contact resistivity(${\rho}_c$) of ohmic contact was decreased, while the leakage current in Schottky diode was increased with increasing ion energy due to the preferential sputtering of nitrogen. At a higher rf power, an additional effect of damage was found on the etched sample, which was sensitive to the dopant concentration in terms of the ${\rho}_c$ of ohmic contact. This was attributed to the effects such as the formation of deep acceptor as well as the electron-enriched surface layer within the depletion layer. Furthermore, thermal annealing process enhanced the ohmic and Schottky property of heavily damaged surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.642-647
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• 2014

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

• Bulletin of the Korean Chemical Society
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• v.13 no.1
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• pp.30-32
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• 1992

The apparent depth of space charge region on the ZnO $(10{\bar{1}}0)$ surface in chemisorption of oxygen has been estimated from the capacitance of two contacting faces. When the sample (donor concentration: $2.4{\times}10^{22}\;m^{-3}$) was evacuated at 773 K for 1 hr the depth reached to 40-100 ${\AA}$ depending on sample assembly. Admission of oxygen to the sample resulted in an increase of the depth to 3600 ${\AA}$ where the increment was greater at higher oxygen pressure between 6.6-1600 $N/m^2$. Admission of CO to the sample previously exposed to oxygen yields a decrease in the depth. The results of the measurement support that oxygen is adsorbed as an acceptor on ZnO $(10{\bar{1}}0)$.

• Bulletin of the Korean Chemical Society
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• v.13 no.5
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• pp.517-520
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• 1992

Solvent exchange rates of selected protons were measured by NMR saturation recovery method for yeast $tRNA^{Phe}$, at temperature from 25 to $40^{\circ}C$, in the presence of 0.1 M NaCl and various low levels of added magnesium ion. The exchange rates in zero $Mg^{2+}$ concentration indicate early melting of acceptor stem, D stem, and tertiary structure. Addition of magnesium ion stabilizes the entire D stem more effectively than any other secondary or tertiary interactions.