Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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C-V Characteristics of MOS Devices by Rapid Thermal Nitridation(RTN)

RTN에 의해 제작된 MOS 소자의 C-V 특성

  • Chang, Eui-Goo (Department of Electrical Engineering, Chung-Ang University) ;
  • Choi, Won-Eun (Department of Electrical Engineering, Chung-Ang University) ;
  • Yoon, Dohn-Young (Department of Electrical Engineering, Chung-Ang University) ;
  • Lee, Oh-Sung (Department of Electrical Engineering, Chung-Ang University) ;
  • Kim, Sang-Yong (Department of Electrical Engineering, Chung-Ang University)
  • 장의구 (중앙대학교 전기공학과) ;
  • 최원은 (중앙대학교 전기공학과) ;
  • 윤돈영 (중앙대학교 전기공학과) ;
  • 이오성 (중앙대학교 전기공학과) ;
  • 김상용 (중앙대학교 전기공학과)
  • Published : 1988.07.01
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Abstract

The capacitance-voltage (C-V) chracteristics of thin nitrided thermal oxides prepared by rapid termal nitridation(RTN) have been studied. The threshold voltages were calculated using C-V measurement and found to vary as the concentration of acceptor and the thickness of oxynitride. When the Si02 films were annealed in NH3 a decrease in the positive oxide charge due to Si-N bond was observed. In the case applied frequency is high and low, the high frequency depletion capacitance was higher than that of low frequency, which is indicative of high frequency surface conduction by mobile surface charge.

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