• Proceedings of the KSRS Conference
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• 1998.09a
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• pp.399-403
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• 1998

Absorption coefficient per mass unit of particles, specific absorption coefficient, is one of main parameters in developing algorithms for ocean color remote sensing. Specific absorption coefficient of chlorophyll (a$^*_{ph}$) and suspended sediment (SS) were analyzed by "wet filter technique" and "Kishino method" for data sets observed in the Yellow and Mediterranean Seas. A new data-recovering method for the filter technique was also developed using spectrum slopes. This method recovered the baseline of spectrum that was often missed in the Kishino method. High a$^*_{ph}$($\lambda$) values in the oligotrophic Mediterranean Sea and low values in the Yellow Sea were observed, spanning over the range of 0.02 to 0.12 $m^2$/mg, at the chlorophyll maximum absorption wavelength 440nm. The empirical relationship between a$^*_{ph}$ and chlorophyll concentration was found to fit a power function, which was slightly different from that proposed by Bricaud et ai. (1995). Absorption specific coefficients for suspended sediment (a$^*_{SS}$) didn't show any relationship with concentrations of suspended sediment. However, the average value of a$^*_{SS}$ at 440nm was close to the specific absorption coefficient of soil (loess) measured by Ahn (1990). The more-pronounced variability of a$^*_{SS}$ than a$^*_{ph}$ perhaps can explain more wide range of size-distribution for SS, which were determined by their specific gravity and agitation of water mass in the sea surface.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.29-34
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• 1995

Mirror coating is applied to laser facets to improve properties of edge emitting laser diodes. In this experiment, InGaAsP/GaAs high power laser diodes were studied with respect to different degrees of anti-reflective coating. Sputterred $Al_{2}$O$_{3}$ was used as the coating material and the HR coating was kept constant at 90%. Threshold current density, differential quantum efficiency, emission wavelength and the operating current at 500mW were measured for a range of AR coating and compared with theoretically calculated values; that showed good agreements. Precise wavelength control is important for laser diodes for solid state pumping because of small absorption bandwidth. In addition, since these lasers operate under CW condition, a lowest possible operating current for a given power is desired in order to minimize the heat produced. From the results of this experiment, we were able to obtain a optimum range of AR coatings for minimum operating current. The wavelength can be varied up to 4nm within this range.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.654-656
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• 2004

The effect of excitation energy and various dopants(Eu and Ce) on the emission wavelength and intensity were investigated. According to PL spectra, SrO-$Al_2O_3$ phosphors had wide absorption band at nUV. By substituting Ce for Eu, the emission band and excitation wavelength were shifted to shorter wavelength. Ce doped $SrAl_2O_4$ and $Sr_4Al_{14}O_{25}$ showed greenish blue(475nm) and blue(400nm), respectively.

• Journal of the Korean Society of Clothing and Textiles
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• v.15 no.3 s.39
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• pp.281-288
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• 1991

Optical behaviors and dyeing properties of color solution extracted from arrowroot leaves were investigated. The wavelength of maximum absorption of the color solution appeared at 268 and 320 nm, respectively. The amount of colors extracted was increased with extracting temperature and time. Spectra of color solution are shifted to longer wavelength at higher pH values, and shifted to shorter wavelength by irradiation for 2 hrs. Remaining ratio of colors by irradiation decreased with increasing alkalinity of color solution. Degree of exhaustion on the silk fabrics was related to the concentration and pH of dyebath. Surface color of dyed fabrics, lightfastness and wash-fastness were variously according to mordant used. Hot water resistance and drycleaning fastness of dyed silk fabrics by treatment of mordants were all within commercially acceptable limits.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.11
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• pp.83-89
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• 1997

An optimize delectroabsorption modulator structure is designed for high speed optical communication systems considering the extinction efficiency, operating bandwidth, polarization loss, and wavelength chirping. the operating wavelength region is $1.55\mu\textrm{m}$ and the deep ridge structure is adapted for th eminimum polarization loss. Simulations show that the absorption layer thickness larger than $0.25\mu\textrm{m}$, and the modulator length shorter than $200\mu\textrm{m}$ are required for the bandwidth over 10GHz. To obtain the modulatiron efficiency over 10dB/V, a wavelength detuning needs to be determined less than 40meV.

• Analytical Science and Technology
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• v.8 no.4
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• pp.461-464
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• 1995

Three wavelength spectrophotometry was used to determine the content of eugenol in Eugenia Caryophyllata Thunb. Using this method could effectively eliminate the deviation of background absorption caused by the change of concentration and the error of quantitative analysis caused by asymmetric peaks, and at the same time the leaning degree of base line was corrected. This method was simple the recovery ratio was 90.05%-116.94% and the coefficient of variation was 3.5%.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.24-30
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• 2006

Integrated cavity output spectroscopy(ICOS) is a simple, non-intrusive absorption measurement technique that can detect and quantify trace-level gas species. The spectral absorbance of a gas is quantified from the integrated optical output of the modulated high-finesse cavity containing the sample which is irradiated by a wavelength-swept laser source. We constructed an experimental setup by using a tunable single mode external cavity diode laser operating at the wavelength near 765 nm and a Fabry-Perot cavity with length modulation achieved by a piezoelectric transducer where one of the cavity mirrors sat on. In the experiment performed on minute oxygen gas at the wave-length near 764.5nm, we demonstrated the minimum detectable absorption of $8.45\times10^{-8}cm^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

• Transactions on Electrical and Electronic Materials
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• v.4 no.1
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• pp.7-10
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• 2003

Single phase CuInS$_2$ thin film with the strongest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second strongest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$was well made with chalcopyrite structure at substrate temperature of 70$^{\circ}C$. annealing temperature of 250$^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 Um when the Cu/In composition ratio of 1.03, where the lattice constant of a and c were 5.60${\AA}$ and 11.12${\AA}$, respectively. The Cu/In stoichiometry of the single-phase CuInS$_2$thin films was from 0.84 to 1.3. The film was p-type when tile Cu/In ratio was above 0.99 and was n-type when the Cu/In was below 0.95. The fundamental absorption wavelength, absorption coefficient and optical band gap of p-type CuInS$_2$ thin film with Cu/In=1.3 were 837nm, 3.OH 104 cm-1 and 1.48 eV, respectively. The fundamental absorption wavelength absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film with Cu/In=0.84 were 821 nm, 6.0${\times}$10$^4$cm$\^$-1/ and 1.51 eV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.