• Title/Summary/Keyword: Absorption wavelength

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Synthesis of Ultra-small PbS Nanocrystal Quantum Dots for Energy Applications

  • Choe, Hye-Gyeong;Jeong, So-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.535-535
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    • 2012
  • We present a new synthetic route and characterization for ultra small sized PbS quantum dots in extreme quantum confinement with 1.5 to 2.9 nm in diameter. We obtained a series of nanocrystals with first absorption wavelength ranging from 580 to 820 nm (2.1-1.5 eV). To get this result, PbS quantum dots size is finely controlled by adjusting the growth temperature in the range of $70-95^{\circ}C$. We demonstrate that photoluminescence (PL) shows a red shift with respect to the first absorption peak that increases with decreasing PbS quantum dots size and ranges from about 500 to 125 meV as the mean PbS quantum dots diameter increases from 1.5 to 2.9 nm. We further created the assembled PbS quantum dot solids and investigated the transport properties for energy applications.

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Study on the Absorption and Excretion of Capsaicin in Rabbits (가토에 있어서 Capsaicin의 흡수 및 배설에 관한 연구)

  • 김낙두;박찬용
    • YAKHAK HOEJI
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    • v.25 no.3
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    • pp.101-108
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    • 1981
  • Quantitative determination of capsaicin in biological fluid was investigated. The pharmacokinetic study of capsaicin in rabbits was performed by high-pressure liquid chromatography, equipped with a microparticulate reversed-phase column and a fixed wavelength detector. Elution was carried out using methanolwater(70:30). It allows the quantitative determination at 8-400 ng level. When single dose of capsaicin(4mg/kg) was given to rabbits intravenously, the elimination phase was extremely short with average half-life to 17.35 minute. Urine excretion of capsaicin itself during first 2 hours after intravenous administration (4mg/kg) was 0.004-0.04% of the administered amount. The maximum plasma concentration of capsaicin after oral administration (300mg/kg) was $4{\times}10^{-7}$g/ml at 40 minutes. The $LD_{50}$ of capsaicin in mouse was 0.40mg/kg (i.v.) and 47.2 mg/kg (p.o.) which was determined by Litchfield and Wilcoxon's method, suggesting that the gastrointestinal absorption of capsaicin is poor.

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Synthesis and Characterization of Fluorinated Poly(phenylmaleimide-co-pentafluorophenylmaleimide) for Optical Waveguides

  • Choi, Jongwan;Oh, Jin-Woo;Kim, Nakjoong
    • Bulletin of the Korean Chemical Society
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    • v.34 no.4
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    • pp.1077-1080
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    • 2013
  • Fluorinated polymaleimides with high thermal stability and low optical absorption loss in the optical communication wavelength of $1.55{\mu}m$ were investigated for application in low-loss waveguide materials. The fluorinated polymaleimides were prepared from two monomers phenylmaleimide (H-PMI) and pentafluorophenylmaleimide (F-PMI). All synthesized copolymers had high thermal stability (decomposition temperature $(T_d)=380-430^{\circ}C$). The refractive index of the copolymers could be tuned from 1.4969 to 1.5950 in the TE mode and from 1.4993 to 1.5932 for the TM mode at 632.8 nm by copolymerizing different weight ratios of H-PMI and F-PMI. The refractive index of the copolymers decreased with increasing F-PMI content. In addition, when the amount of F-PMI was increased, optical loss and absorption loss at 632.8 nm and 1550 nm, respectively, decreased.

Dual Laser Beam Joining Process for Polymers in Automotive Applications to Reduce Weights (차량경량화를 위한 듀얼 레이저 에너지 플라스틱 접합의 응용)

  • Han, Sang Bae;Choi, Hae Woon
    • Journal of Welding and Joining
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    • v.31 no.4
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    • pp.23-27
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    • 2013
  • Laser heat source was used for automotive interior and exterior parts to reduce weights. Typically, 900's nm wavelength of laser has been widely used for polymer joining, however, the transmittance of the laser beam thorough clear polymers such as PMMA or PC has been an issue to overcome. To solve this issue, 1,940nm laser was applied on the clear polymer for the better absorption and 900nm laser beam was used for main laser for the joining. Conventional Gaussian or Elliptical heat source approximation has limitation in polymer which had deeper skin depth where major laser beam absorbs. To accurately simulate the physical laser beam absorption and joining optical properties were experimentally measured for the computer FEM simulation. The simulation results showed close correlation between theoretical and experimental results. The developed laser process is expected to increase productivity and gap closing which can cause failure of joining in laser material processing.

GRB 140304A at z=5.283: Implications on the high redshift universe and the observed flaring activities

  • Jeong, Soomin
    • The Bulletin of The Korean Astronomical Society
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    • v.41 no.1
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    • pp.38.1-38.1
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    • 2016
  • Gamma ray burst, the most brightest explosion phenomena in the current universe is well suited for study of high redshift universe. We report the afterglow multi-wavelength observation and GTC spectroscopy follow up of GRB 140304A which was exploded at z=5.283. The spectrum was shown damped Lyman alpha features and a series of absorption lines S, Si, SiII*, Oi, CII, CII*, SiIV are clearly detected at common redshift. Clear optical flares are detected when X-ray flare happened and a possible gamma-ray excess also. At this conference, we report on implications for the GRB host and environments using its absorption features which place the results in context to other well studied high redshift GRBs and studies about the ejecta using its observed flaring activities.

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Dielectric constant of GaN thin films (질화갈륨 박막의 유전 상수)

  • 김혜림;추장희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.267-270
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    • 1999
  • We measured the dielectr~c constant of undoped GaN thin films grown on (0001) sapphire substrates In 0.8 - 4.5 eV energy (276 - 1550 nm wavelength) range by spectroscopic ellipsometry. For more accurate data analysis we also performed X-ray diffraction, photolurninescence and Rutherford backscattering spectroscopy on samples. Data were analyzed with a four-phase model. The dielectric constant of GaN thin films was obtained not only in the transparent region but also around the absorption edge. Absorption edge energy, $3.3992{\pm}0.002$eV was determined from the obtained dielectric function.

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Numerical Study on Optical Characteristics of Multi-Layer Thin Film Structures Considering Wave Interference Effects (파동간섭효과를 고려한 다층 박막 구조의 광학특성에 대한 수치해석 연구)

  • Shim, Hyung-Sub;Lee, Seong-Hyuk
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.5
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    • pp.272-277
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    • 2006
  • The present study is devoted to investigate numerically the optical characteristics of multi-layer thin film structures such as $Si/SiO_2\;and\;Ge/Si/SiO_2$ by using the characteristics transmission matrix method. The reflectivity and the absorptivity rate for thin film structures are estimated for different incident angles of rays and various film thicknesses. In addition, the influence of wavelength on optical characteristics related to complex refractive index is examined. It is found that such wave-like characteristics are observed in predicting reflectivities and depends mainly on film thickness. Moreover, the present study predicts the film thickness for ignoring wave interference effects, and it also discusses the fundamental physics behind optical and energy absorption characteristics appearing in multi-layer thin film structures.

Optical Characteristics of Er and Yb co-doped YCa4B3O10 (Er과 Yb이 동시 도핑된 YCa4B3O10의 광 특성)

  • Jang, Won-Kweon;Yu, Young-Moon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.12
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    • pp.1082-1086
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    • 2007
  • Optical characteristics of $YCOB(YCa_4B_3O_{10})$, known as a crystal of self frequency doubling, was investigated when Yb and Er ions were co-doped 20 % and 2 %, respectively. The absorption cross section of Er,Yb:YCOB crystal at $1.0\;{\mu}m$ was larger than that of Yb:YCOB, which means that the former was profitable for more energy absorption than the latter. The fluorescent lifetime at $1.5\;{\mu}m$ was measured to be 1.27 ms at room temperature, and lengthened to 1.54 ms and 1.62 ms at low temperatures of 77 K and 6 K, respectively. The line widths of fluorescent spectrum at $1.5\;{\mu}m$ were getting narrower as lowering temperature. However, we didn't observe a temperature dependent peak wavelength shift.

Development of a MEMS Structure for an Infrared Focal Plane Array (Infrared Focal Plane Array 용 MEMS 구조체 개발)

  • Cho, Seong-M.;Yang, Woo-Seok;Ryu, Ho-Jun;Cheon, Sang-Hoon;Yu, Byoung-Gon;Choi, Chang-Auck
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.8
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    • pp.1461-1465
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    • 2007
  • A micromachined sensor part for an infrared focal plane array has been designed and fabricated. Amorphous silicon was adapted as a sensing material, and silicon nitride was used as a membrane material. To get a good efficiency of infrared absorption, the sensor was made as a ${\lambda}/4$ cavity structure. All the processes were done in $0.5\;{\mu}m$ iMEMS fab. in the Electronics and Telecommunication Research Institute (ETRI). The processed MEMS sensor structure had a small membrane deflection less than $0.3\;{\mu}m$. This excellent deflection property can be attributed to the rigorous balancing of the stresses of individual layers. The efficiency of infrared absorption was more than 75% in the wavelength range $8\;-\;14\;{\mu}m$.

Optical Properties of Ag/Chalcogenides Thin Films Exposed to Laser (레이저 광 노출에 따른 Ag/칼코게나이드 박막의 광학적인 특성)

  • 김종기;박정일;정흥배;이현용
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.561-565
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    • 1999
  • We measured the optical properties in Ag/chalcogenide films with the exposure of 325nm-Held laser In addition we have investigated the Ag doping mechanism as considering the changes of Ag-concentration distribution and optical energy gap ( $E_{op}$ ) with Photon-dose. The "windows" characteristics of Ag thin film occur around the wavelength of 325 nm and the Ag is evaluated to be transparent, without an absorption, in the region. While the $E_{op}$ of S $b_2$ $S_3$ thin film was changed largely by an exposure of HeNe laser(632.8 nm) an exposure of HeCd laser resulted in relatively small variation of $E_{op}$ . Therefore it is thought that photon absorption at the metal layer plays an important role in Ag photodoping.on at the metal layer plays an important role in Ag photodoping.

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