• Journal of Magnetics
• /
• v.3 no.2
• /
• pp.64-67
• /
• 1998

Microwave absorbing properties of ferrite-epoxy composite (absorbing layer) attached on the carbon fiber polymer composite (reflective substrate) are analyzed on the basis of wave propagation theory. A modified equation for wave-impedance-matching at the front surface of absorbing layer including the effect of electrical properties of the quasi-conducting substrate is proposed. Based on this analysis, the frequency and layer dimension that produce zero-reflection can be estimated from the intrinsic material properties of the obsorbing layer and the substrate. It is demonstrated that the microwave reflectivity of carbon fiber composite has a strong influence on the microwave absorbance of front magnetic layer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.29 no.4
• /
• pp.241-246
• /
• 2018

In this study, we proposed a wideband frequency tunable metamaterial absorber using a switchable ground plane (SGP). We proposed two fire retardant or flame resistant 4 (FR4) substrate structures for the SGP. An SGP is placed at the middle layer, between the top pattern and the bottom ground plane. The SGP can either be made ground or reactive, by switching the PIN diode ON/OFF. As the frequency is determined by the substrate thickness, the frequency can be switched from the SGP. The proposed absorber is demonstrated by full-wave simulations and measurements. When the SGP is turned on, an absorptivity higher than 90% is achieved from 3.5 GHz to 11 GHz. When the SGP is turned off, an absorptivity higher than 90 % is achieved from 1.7 GHz to 5.2 GHz.

• Nuclear Engineering and Technology
• /
• v.53 no.8
• /
• pp.2454-2463
• /
• 2021

The objective of this research is to the use of americium (AmO₂) as a burnable absorber effectively instead of conventional gadolinium (Gd₂O₃) for VVER-1200 reactor by analyzing its impacts on reactivity, power peaking factor (PPF), safety factor, and quality of the spent fuel. The assembly is burned to 60 GWd/t by using SRAC-2006 code and JENDL-4.0 data library for finding the optimum amount and effective way of using AmO₂ as a burnable absorber. From these studies, it is found that AmO₂ can decrease the excess reactivity like Gd₂O₃ without changing the criticality life span and enrichment of ²³⁵U. A homogeneous mixture of the 0.20% AmO₂+ 4.95% enriched UO₂ fuel rod (model MF-4) decreases the PPF than the reference assembly. The use of AmO₂+UO₂ in the integral burnable absorber (IBA) rod or the outer layer could also decrease the PPF up to 10 GWd/t but increases rapidly after 30 GWd/t, which could be a safety threat. The fuel temperature coefficient and void coefficient of the model MF-4 are the same as the reference assembly. In addition, 22% of initially loaded Am are burning effectively and contributing to the power production.

• Korean Journal of Materials Research
• /
• v.23 no.3
• /
• pp.183-189
• /
• 2013

$Cu_2ZnSn(S,Se)_4$ material is receiving an increased amount of attention for solar cell applications as an absorber layer because it consists of inexpensive and abundant materials (Zn and Sn) instead of the expensive and rare materials (In and Ga) in $Cu(In,Ga)Se_2$ solar cells. We were able to achieve a cell conversion efficiency to 4.7% by the selenization of a stacked metal precursor with the Cu/(Zn + Sn)/Mo/glass structure. However, the selenization of the metal precursor results in large voids at the absorber/Mo interface because metals diffuse out through the top CZTSe layer. To avoid the voids at the absorber/Mo interface, binary selenide compounds of ZnSe and $SnSe_2$ were employed as a precursor instead of Zn and Sn metals. It was found that the precursor with Cu/$SnSe_2$/ZnSe stack provided a uniform film with larger grains compared to that with $Cu_2Se/SnSe_2$/ZnSe stack. Also, voids were not observed at the $Cu_2ZnSnSe_4$/Mo interface. A severe loss of Sn was observed after a high-temperature annealing process, suggesting that selenization in this case should be performed in a closed system with a uniform temperature in a $SnSe_2$ environment. However, in the experiments, Cu top-layer stack had more of an effect on reducing Sn loss compared to $Cu_2Se$ top-layer stack.

• Korean Journal of Materials Research
• /
• v.19 no.8
• /
• pp.452-456
• /
• 2009

In high-efficiency Cu(In,Ga)$Se_2$ solar cells, Na is doped into a Cu(In,Ga)$Se_2$ light-absorbing layer from sodalime-glass substrate through Mo back-contact layer, resulting in an increase of device performance. However, this supply of sodium is limited when the process temperature is too low or when a substrate does not supply Na. This limitation can be overcome by supplying Na through external doping. For Na doping, an NaF interlayer was deposited on Mo/glass substrate. A Cu(In,Ga)$Se_2$ absorber layer was deposited on the NaF interlayer by a three-stage co-evaporation process As the thickness of NaF interlayer increased, smaller grain sizes were obtained. The resistivity of the NaF-doped CIGS film was of the order of $10^3{\Omega}{\cdot}cm$ indicating that doping was not very effective. However, highest conversion efficiency of 14.2% was obtained when the NaF thickness was 25 nm, suggesting that Na doping using an NaF interlayer is one of the possible methods for external doping.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
• /
• 1996.09a
• /
• pp.111-116
• /
• 1996

To realize the RF layer of Rubber Ferrite-Air-Solid Ferrite(RF-A-F) that proposed by Y.Naito it is tried to grasp the formulation of composition by varying the ratio of mole and element of Complex Isotropic Ferrite Nix-A0.1-Zn(1-x-0.1)*Fe2O4 As a result it was found that the characteristics of the electromagnetic wave absorber constructed by the selected formulation of compositionin in RF-A-F type were improved.

• Current Photovoltaic Research
• /
• v.6 no.1
• /
• pp.21-26
• /
• 2018

Beside several advantages, the PV power generation as a clean energy source, is still below the supply level due to high power generation cost. Therefore, the interest in fabricating low-cost thin film solar cells is increasing continuously. $Cu_2O$, a low cost photovoltaic material, has a wide direct band gap of ~2.1 eV has along with the high theoretical energy conversion efficiency of about 20%. On the other hand, it has other benefits such as earth-abundance, low cost, non-toxic, high carrier mobility ($100cm^2/Vs$). In spite of these various advantages, the efficiency of $Cu_2O$ based solar cells is still significantly lower than the theoretical limit as reported in several literatures. One of the reasons behind the low efficiency of $Cu_2O$ solar cells can be the formation of CuO layer due to atmospheric surface oxidation of $Cu_2O$ absorber layer. In this work, atomic layer deposition method was used to remove the CuO layer that formed on $Cu_2O$ surface. First, $Cu_2O$ absorber layer was deposited by electrodeposition. On top of it buffer (ZnO) and TCO (AZO) layers were deposited by atomic layer deposition and rf-magnetron sputtering respectively. We fabricated the cells with a change in the deposition temperature of buffer layer ranging between $80^{\circ}C$ to $140^{\circ}C$. Finally, we compared the performance of fabricated solar cells, and studied the influence of buffer layer deposition temperature on $Cu_2O$ based solar cells by J-V and XPS measurements.

• Current Photovoltaic Research
• /
• v.4 no.3
• /
• pp.87-92
• /
• 2016

The effects of selenization pressure on the structural, optical and electrical properties of the CIGS thin films prepared by RF magnetron sputtering using a single quaternary target were investigated. At selenization pressures lower than atmospheric pressure, CIGS thin films formed non-stoichiometric compounds due to deficiencies of Se vapor. In contrast, when selenization process was conducted at above atmospheric pressure, the residence time of Se vapor inside the tube increased so that the Se element could be incorporated within vacant sites of the CIGS structure, resulting in the formation of stoichiometric CIGS thin films. High quality CIGS thin films could be obtained when the selenization process was performed at pressures greater than atmospheric and $550^{\circ}C$.

• Korean Journal of Materials Research
• /
• v.31 no.11
• /
• pp.619-625
• /
• 2021

Cu₂ZnSn(S,Se)₄ (CZTSSe) based thin-film solar cells have attracted growing attention because of their earth-abundant and non-toxic elements. However, because of their large open-circuit voltage (V_oc)-deficit, CZTSSe solar cells exhibit poor device performance compared to well-established Cu(In,Ga)(S,Se)₂ (CIGS) and CdTe based solar cells. One of the main causes of this large V_oc-deficit is poor absorber properties for example, high band tailing properties, defects, secondary phases, carrier recombination, etc. In particular, the fabrication of absorbers using physical methods results in poor surface morphology, such as pin-holes and voids. To overcome this problem and form large and homogeneous CZTSSe grains, CZTSSe based absorber layers are prepared by a sputtering technique with different RTA conditions. The temperature is varied from 510 ℃ to 540 ℃ during the rapid thermal annealing (RTA) process. Further, CZTSSe thin films are examined with X-ray diffraction, X-ray fluorescence, Raman spectroscopy, IPCE, Energy dispersive spectroscopy and Scanning electron microscopy techniques. The present work shows that Cu-based secondary phase formation can be suppressed in the CZTSSe absorber layer at an optimum RTA condition.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.1
• /
• pp.1-15
• /
• 2015

In this invited paper, the authors give an overview of the new design technology for a metallic backplane-less metamaterial(MM) absorber and discuss a selection of examples. In contrast to a common MM absorber structure, the metallic pattern layer of the presented structure is placed facing toward the incident wave propagation direction to reduce the radar cross section(RCS) due to the metallic pattern itself at frequencies other than the targeted absorption frequency bands. The ability of the MM backplane-less absorber to exhibit broadband absorption performance and irregular surface applications will be discussed.