• Journal of the Korean Data and Information Science Society
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• v.15 no.4
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• pp.783-791
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• 2004

In this paper we review recent developments in nonlinear time series modeling on both conditional mean and conditional variance. Traditional linear model in conditional mean is referred to as ARMA(autoregressive moving average) process investigated by Box and Jenkins(1976). Nonlinear mean models such as threshold, exponential and random coefficient models are reviewed and their characteristics are explained. In terms of conditional variances, ARCH(autoregressive conditional heteroscedasticity) class is considered as typical linear models. As nonlinear variants of ARCH, diverse nonlinear models appearing in recent literature including threshold ARCH, beta-ARCH and Box-Cox ARCH models are remarked. Also, a class of unified nonlinear models are considered and parameter estimation for that class is briefly discussed.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.938-944
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• 1997

Cu-Ni thin film strain gauges for diaphragm-type pressure sensors were developed. Thin films of Cu-Ni alloys of various compositions were deposited onto glass and stainless steel substrates by RF magnetron sputtering. The effects of composition substrate temperature Ar partial pressure and aging on the electrical properties of Cu-Ni film strain gauges in the thickness range 500~2000$\AA$ are discussed. The maximum resistivity(95.6 $\mu$$\Omega$cm) is obtained from 53wt%Cu-47wt%Ni films while the temperature coefficient of resistance(TCR) becomes minimum(25.6ppm/$^{\circ}C$). The gauge factor is about 1.9.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1596-1598
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• 2002

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-($4{\sim}16%$)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vacuum furnace range $500{\sim}1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, ${\rho}$=768.93 ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR = -84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF = 4.12.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.911-917
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• 1996

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

• ETRI Journal
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• v.31 no.6
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• pp.675-679
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• 2009

$Ti_xSi_{1-x}O_y$ (TSO) thin films are fabricated using plasma-enhanced atomic layer deposition. The Ti content in the TSO films is controlled by adjusting the sub-cycle ratio of $TiO_2$ and $SiO_2$. The refractive indices of $SiO_2$ and $TiO_2$ are 1.4 and 2.4, respectively. Hence, tailoring of the refractivity indices from 1.4 to 2.4 is feasible. The controllability of the refractive index and film thickness enables application of an antireflection coating layer to TSO films for use as a thin film solar cell. The TSO coating layer on an Si wafer dramatically reduces reflectivity compared to a bare Si wafer. In the measurement of the current-voltage characteristics, a nonlinear coefficient of 13.6 is obtained in the TSO films.

• Proceedings of the Membrane Society of Korea Conference
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• 2004.05a
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• pp.33-38
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• 2004

Molecular modeling of gas permeation through zeolite membranes with/without intercrystalline region was carried out. Molecular dynamics (MD) and Monte Carlo (MC) simulations were performed to estimate the diffusion coefficient and adsorption parameters respectively, and our proposed combined method of molecular simulation techniques with a permeation theory (CMP) was used to estimate gas permeability. The calculated permeability of gases (Ar, He, Ne, $N_2$, $0_2$, $CH_4$) at 301 K for the single crystal membrane model was about one order of magnitude larger than the experiential values, although the dependence on the molecular weight of the permeating species agreed with experiments. On the other hand, the estimated permeability using the diffusivity and adsorption parameters of the intercrystalline region model was in good agreement with the experiments. The consistency between experiments and the estimated values means the importance of considering the intercrystalline region and the validity of CMP method to predict the performance of zeolite membranes.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.570-571
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• 2006

The mixed atomized iron powders with 0.3% graphite and 1% Ni powders were cold pressed and sintered at $1200^{\circ}C$ for 30 min under pure Ar gas atmosphere. Some of the sintered specimens were intercritically annealed at $760^{\circ}C$ and quenched in water (single quenching). The other sintered specimens were first fully austenized at $890^{\circ}C$ and water quenched. These specimens were then intercritically annealed at $760^{\circ}C$ and re-quenched in water. The experimental results showed that the wear coefficient effectively decreased in the double quenched specimen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.104-105
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• 2007

3,3-Dimethyl-1-butene($C_6H_{12}$) monomer를 이용하여 RF power와 압력에 따라 증착된 막의 refractive index와 extinction coefficient를 알아보았다. 증착된 막의 n & k는 power/pressure가 증가할수록 증가하였으며, Ar으로 증착된 막이 더 낮은 값을 갖는 것으로 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.283-283
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• 2007

Titanium nitride thin films were deposited on $SiO_2$/Si substrate by rf-reactive magnetron sputtering. The structural and electrical properties of the films were investigated with various $N_2/(Ar+N_2)$ flow ratios (nitrogen/argon flow ratio). The resistivity as well as temperature coefficient of resistance (TCR) of the films strongly depends on phase structure. For the films deposited at nitrogen/argon flow ratio of below 5%, the resistivity increased with increasing nitrogen/argon flow ratios. However, the resistivity of the film deposited at nitrogen/argon flow ratio of 7% decreased drastically; it is even smaller than that of metal titanium nitride. A near-zero TCR value of approximately 9 ppm/K was observed for films deposited at nitrogen/argon flow ratio of 3%.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.730-734
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• 2005

Cr-Al-Si-N coatings were deposited on WC-Co substrates by a hybrid coating system of arc ion plating and DC magnet :on sputtering technique in $N_2/Ar$ mixture. The Cr-tll-Si-N coatings were synthesized with different Si contents. Their microstructure and mechanical properties were systematically investigated. The average size of crystallites largely decreases with the increase of Si content compared with Cr-Al-N. The microhardness of Cr-Al-Si-N coatings largely increases from 24 to 55 GPa. The enhanced hardness is believed to originate from the microstructural change by the fine composite microstructure of Cr-Al-N coatings with Si addition. The average friction coefficient of Cr-Al-Si-N coatings decreases from 0.84 to 0.45 with increasing Si content up to $16\;at.\%$.