• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.12
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• pp.2349-2356
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• 2008

In this paper, we present the method to effectively extract and classify the EEG caused by only brain activity when a normal subject is in a state of mental activity. We measure the synchronous EEG on the auditory event when a subject who is in a normal state thinks of a specific task, and then shift the baseline and reduce the effect of biological artifacts on the measured EEG. Finally we extract only the mental task signal by averaging method, and then perform the recognition of the extracted mental task signal by computing the AR coefficients. In the experiment, the auditory stimulus is used as an event and the EEG was recorded from the three channel $C_3-A_1$, $C_4-A_2$ and $P_Z-A_1$. After averaging 16 times for each channel output, we extracted the features of specific mental tasks by modeling the output as 12th order AR coefficients. We used total 36th order coefficient as an input parameter of the neural network and measured the training data 50 times per each task. With data not used for training, the rate of task recognition is 34-92 percent on the two tasks, and 38-54 percent on the four tasks.

• Journal of the Korean institute of surface engineering
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• v.43 no.5
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• pp.238-242
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• 2010

In the present work, the influence of oxide on the Cr-Si-N coatings was investigated for the Cr-Si-O-N coatings on AISI 304 and Si wafer deposited by hybrid system, which combines the DC magnetron sputtering technique and arc ion plating (AIP) using Cr and Si target in an $Ar/N_2/O_2$ gaseous mixture. As the O content in the Cr-Si-N coatings increased, the diffraction patterns of the Cr-Si-O-N coatings showed CrN and $Cr_2O_3$ phases. However, as the O content increased to 28.8 at.%, diffraction peak of $Cr_2O_3$ was disappeared in the Cr-Si-O-N coating. The $d_{200}$ value was decreased with increasing of O content. The average grain size increased from about 40 nm to 65 nm as the O content increased. The maximum micro-hardness of the Cr-Si-O-N coating was obtained 4507 Hk at the O content of 24.8 at.%. The average friction coefficient of the Cr-Si-O-N coatings was gradually decreased by increasing the O content and the average friction coefficient decreased from 0.37 to 0.25 by increasing the O content. These results indicated that amorphous phase was increased in the Cr-Si-O-N coatings by increasing of O content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.323-327
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• 2024

The low-temperature coefficient of resistance (TCR) is a crucial factor in the development of space-grade resistors for temperature stability. Consequently, extensive research is underway to achieve zero TCR. In this study, resistors were deposited by co-sputtering nickel-chromium-based composite compositions, metals showing positive TCR, with SiO₂, introducing negative TCR components. It was observed that achieving zero TCR is feasible by adjusting the proportion of negative TCR components in the deposited thin film resistors within certain compositions. Additionally, the correlation between TCR and deposition conditions, such as sputtering power, Ar pressure, and surface roughness, was investigated. We anticipate that these findings will contribute to the study of resistors with very low TCR, thereby enhancing the reliability of space-level resistors operating under high temperatures.

• Journal of Power System Engineering
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• v.21 no.3
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• pp.102-107
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• 2017

A tungsten inert gas (TIG) welding method was used for the bonding of stainless steel. TIG welding using inert gas (He or Ar gas) is a method to prevent oxidation and nitriding of materials and to combine non-ferrous metals. This method has the advantage of obtaining a smooth weld surface. In this study, the welding characteristics of 304 stainless steel welded by TIG welding method were analyzed by using nondestructive technique. Ultrasonic and Acoustic Emission (AE) was applied to evaluate the micro-damage of TIG welded 304 stainless steel. The velocity and damping coefficient of ultrasonic wave showed a slight difference in HAZ, which is the welding part of stainless steel. The AE parameters of average frequency, rise time and event were analyzed for the dynamic behavior of stainless steel during loading. Optimal AE parameters for evaluating the degree of damage to the specimen have been derived. Fractograph and metal structures of 304 stainless steel using SEM and optical microscope were discussed.

• Journal of Biomedical Engineering Research
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• v.13 no.4
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• pp.299-306
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• 1992

For quantitative measurement of reflected light from a clinical diagnostic scrip, a prototype of reflectance photometer was designed. The strip loader and cassette were made to obtain more accurate re(leclance parameters. The strop was illuminated at $45^{\circ}C$ through optical fiber and the intensity of reflected light was determined at rectangulat angle using a photodiode. The kubelka-munk coefficient and reflection optical density were determined ar four different wavelengths(500,550,570 and 610nm) for blood glucose strip. For higher concentration than 300mg/dl about glucose, a saturation state of absorbance was observed at 500,550 and 570nm. The correlation between glucose concentration and parameters was the best at 610nm.

• Journal of Biomedical Engineering Research
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• v.7 no.1
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• pp.35-40
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• 1986

For quantitative measurement of reflected light from a clinical diagnostic strip, a prototype old reflectance photometer was designed. The strip loader and cassette were made to obtain more accurate reflectance parameters. The strip was illuminated at 45˚c through optical fiber and the intensity of reflected light was determined at rectanguLat angle using a photodiode. The kubelka-munk coefficient and reflection optical density were determined ar four different wavelengths(500, 550, 570 and 610nm) for blood glucose strip. For higher concentration than 300mg/41 about glucose, a saturation state of abforbance was observed at 500, 550 and 570nm. The correlation between glucose concentration and parameters was the best at 610nm.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1399-1401
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• 2001

We studied on structure and resistivity, temperature coefficient of resistance (TCR) of NiCr and NiCr-N thin resistor films prepared by do reactive magnetron sputtering of NiCr target. It is found that while pure NiCr films are polycrystalline, an addition of nitrogen (N2/(Ar+N2) ratios are between 10% and 70%) into the film is changed into amorphous structure and sheet resistance of films is increased. Measurement temperatures of TCR are ratios of $5^{\circ}C$ per 15min from $25^{\circ}C$ to $130^{\circ}C$. TCR for an as-deposited NiCr-N thin film is varied from positive to negative.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.13-20
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• 1995

To develope a high precision TiAIN thin film resistor, TiAIN films were deposited on A1$_{2}$03 substrates by reactive planar magnetron cosputtering from Ti and Al targets in an Ar-N$_{2}$ atmosphere. The characteristics of the TiAIN thin film were controlled by changing of the R.F. power on Ti and Al targets, and the N$_{2}$ partial pressure. The high precision TiAIN thin film resistor with TCR(Temperature Coefficient of Resistance) of less than 10ppm/.deg. C was obtained under the R.F. power condition of 160(w)/240(w) to Ti and Al targets at the N$_{2}$ partial pressure of 7*10$^{-5}$ Torr. The composition of these films were investigated by XRD, SEM and EDS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.383-383
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• 2010

TiN is one of the mostly used barrier materials in copper metallization because of low friction coefficient and superior electrical properties. We need to investigate for the etching characteristic of TiN. In this study, we investigated about etching characteristic of TiN using $BCl_3$/Ar inductively coupled plasma system. The etch rate was measured by a depth pro filer. The chemical etching reactions of the TiN surface was investigated X-ray photoelectron spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.234-234
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• 1999

AC-PDP(Plasma Display Panel)에 사용하는 MgO 보호막의 이차전자 방출계수(${\gamma}$)는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류에 영향을 받는다. 현재 AC-PDP에는 방전특성의 향상과 VUV 발생을 위하여 He, Ne, Ar, Xe 등의 비활성기체를 두가지 혹은 세가지로 혼합한 혼합기체가 사용되고 있다. 기체를 혼합할 경우 Penning 효과에 의해 더 좋은 방전특성을 얻을 수 있는 것으로 알려져 왔으며, 이때의 적절한 혼합비율을 찾는 것은 AC-PDP의 효율 개선에 매우 중요하다. 이번 실험에서는 (111), (100), (110) 각각의 방향으로 배향된 MgO Bulk Crystal과 MgO 보호막의 이차전자방출계수를 He+Ne+Xe 삼원기체를 사용하였다. MgO 보호막은 실제 21inch 규격의 Panel을 사용하였으며, 혼합기체의 혼합비율의 Ne:Xe을 99:1, 98:2, 96:4, 93:7과 He+Ne+Xe의 삼원기체로 다양하게 변화시켜 가며 실험하였다.