• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.834-838
• /
• 1996

The diagnosis of the plasma in the facing targets sputtering system was performed in mixture gas of Ar 0.18-0.0 Pa, Xe 0.0-0.18 Pa and $O_2$ 0.02 Pa by using Langmiur's probe and the effect of plasma-damage to surface smoothness and magnetic characteristics of Ba ferrite films was clarified. The electron density $N_e$ and the electron temperature $T_e$ were evaluated at the center of the plasma and at the neighborhood of the anode ring. $T_e$ decreased and $N_e$ increased with increase of $P_{Xe}$ at the center of plasma. For the measurement at the neighborhood of the anode ring, $T_e$ was almost constant and $N_e$ took the minimum value at $P_{Xe}$ of 0.1 Pa, where Ba ferrite films with excellent c-axis orientation and magnetic characteristics were obtained. It was suggested that the restriction of the bombardment of recoiled particles as well as the suppress of plasma-damage were effective for obtaining good surface smoothness and excellent magnetic characteristics and it was useful for decreasing the crystallization temperature of Ba ferrite films.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2006.05a
• /
• pp.595-598
• /
• 2006

In this letter, a compact rectangular spiral antenna is proposed. Instead of a center excitation of conventional spiral antennas, the proposed antenna is adopted a modified feed network, feeding at the end of the spiral. The matching circuit of $'{\sqsupset}'$ shape is added at the feeding point. With this matching circuit, we can easily match the input impedance well, without the limit of the space. The parameter which determines the circular wave characteristic is explained, and the design guideline of the proposed antenna is presented. We design a proposed antenna operating at 9.5 GHz. Its size is only $0.6\lambda_g\times0.6\lambda_g$. The simulated bandwidth of the input impedance $(S11\leq-10)$ is 8.12% and that of $(AR\leq-3)$ is 4.62%, which is excellent characteristics as compared to its simple structure.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.04a
• /
• pp.71-72
• /
• 2007

In this study, we investigated the fabrication of MLR (multi-layer resist) with a very thin diamond-like carbon (DLC) layer. ArF PR/$SiO_2$/DLC MLR structure was investigated and etching characteristics of the DLC layer was patterned using $SiO_2$ hard-mask by varying the process parameters such as different high-frequency/low-frequency combination ($f_{LF}/f_{HF}$), HF/LF power ratio ($P_{HF}/P_{LF}$), $O_2$ flow and $N_2$ flow rate in $O_2/N_2$/Ar plasmas. The results indicated an increased etch rate of DLC for the higher $f_{LF}/f_{HF}$ combination and for the increased low-frequency power ($P_{LF}$). And the etch rate of DLC was decreased with increasing the $N_2$ flow rate in $O_2/N_2$/Ar plasmas. In order to confirm the application of DLC MLR for the etching process of silicon oxide, the stack of ArF PR/BARC/$SiO_2$/DLC/TEOS/Si was investigated.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.2
• /
• pp.29-34
• /
• 2003

Ferroelectric YMnO$_3$ thin films were etched with Ar/C1$_2$ and CF$_4$/C1$_2$ Plasma. The maximum etch rate of YMnO$_3$ thin film was 300 $\AA$/min at a Cl$_2$/Ar gas mixing ratio of 8/2, an RF power of 800 W, a do bias of-200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. From the X-ray photoelectron spectroscopy (XPS) analysis, yttrium was not only etched by chemical reactions with Cl atoms, but also assisted by Ar ion bombardments in Ar/C1$_2$ plasma. In CF$_4$/C1$_2$ plasma, yttrium formed nonvolatile YF$_{x}$ compounds and remained on and the etched surface of YMnO$_3$. Manganese etched effectively by forming volatile MnCl$_{x}$ and MnF$_{y}$. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the YMnO$_3$ thin film etched in Ar/Cl$_2$ plasma shows lower than that in CF$_4$/Cl$_2$ plasma. It indicates that the crystallinty of the YMnO$_3$ thin film is more easily damaged by the Af ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.cts.s.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.6
• /
• pp.709-714
• /
• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
• /
• 1994.04a
• /
• pp.55-67
• /
• 1994

Studies on the ship's automatic navigation & berthing control have been continued by way of solving the ship's mathematical model but the results of such studies have not reached to our satisfactory level due to its non-linear characteristics ar low speed. In this paper the authors propose a new berthing control system which can evaluate as closely as captain's decision-making by using the FNN(Fuzzy Neural Network) controller which can simulate captain's decision-making by using the FNN(Fuzzy neural Network) controller which can simulate captain's knowledge. This berthing controller consists of the navigation subsystem FNN controller and the berthing subsystem FNN controller. The learning data are drawn from Ship Handling Simulator (NavSim NMS90 MK III) and represent the ship motion characteristics internally According to learning procedure both FNN controllers can tune membership functions and identify fuzzy control rules automatically The verified results show the FNN controllers effective to incorporate captain's knowledge and experience of berthing.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.8 no.5
• /
• pp.115-120
• /
• 1999

This research is a described result of experimental for the parameter's effecting the microhole machining by Nd-Yag laser, The parameters are energy, pulse interval time a kin of assisting gas and its pressure. The result reveals that parameter value of energy 0.08J, pulse 20Hz, interval time of 300 microseconds could be a good machining condition to make upper microhoel that is the diameter range of 50-70${\mu}{\textrm}{m}$. At tat time the assistant gas such air, $O_2$, Ar $N_2$, was appelied. Assistant gas of air makes heat affected zone enlarge due to burning of material surface. Also it makes microhole irregular and damageable. Because of refusion caused by chemical reaction with $Al_2O_3$ ceramic material . The $O_2$(99.9%) has good characteristics to get good drilling and smooth surface on pressure of 0.2kgf/$\textrm{cm}^2$ but it is expensive. Ar, $N_2$ make material crack and burnning and proved that to be unappropriate but, Ar was a better than $N_2$.

• Journal of Welding and Joining
• /
• v.27 no.2
• /
• pp.44-50
• /
• 2009

The characteristics of arc pressure, current density and heat flux distribution are important factors in understanding physical arc phenomena, which will have a marked effect on the penetration, size and shape of a weld in TIG welding. The purpose of this study is to find out the effect of the heat flux on the melting efficiency and penetration shape in TIG welding using the results of the previous investigators. The conclusions obtained permit to draw a proper method which derived the heat flux distributions by arc pressure distribution measurements, but previous researchers calculated heat flux and current distribution with the heat intensity measurements by the calorimetry. Heat flux of Ar gas arc was concentrated at the central part and distributed low from the arc axis to the radial direction, that of He mixing arc was lower than that of Ar gas, and it was wide distributed to radial direction. That showed a similar characteristic with the Nestor's by calorimetry calculated values. Throughout heat flux drawn in this study was discussed melting efficiency and penetration shape on Ar gas and He mixing gas arc.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.1176-1179
• /
• 2003

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56 [MHz] have been measured over a wide range of power at gas pressure ranging from $1{\sim}70$ [mTorr].

• Journal of electromagnetic engineering and science
• /
• v.14 no.4
• /
• pp.360-366
• /
• 2014

A single-feed composite cavity-backed four-arm curl antenna is presented for use in global positioning systems (GPS). Its primary radiating element is fed by a vacant-quarter printed ring, which helps the antenna directly match to a $50-{\Omega}$ coaxial line and produce a good circular polarization (CP). The cavity-backed reflector is employed to improve the CP radiation characteristics in terms of 3-dB axial ratio (AR) beamwidth and minimum AR value. The optimized design with an overall size of $90{\times}90{\times}25mm^3$ ($0.4725{\lambda}_o{\times}0.4725{\lambda}_o{\times}0.13{\lambda}_o$ at 1,575 MHz) results in a ${\mid}S_{11}{\mid}<-10dB$ bandwidth of 8.66% (1,514-1,651 MHz) and a 3-dB AR bandwidth of 2.23% (1,555-1,590 MHz). The antenna radiates a widebeam right-hand circular polarization and operates with a measured radiation efficiency greater than 90% within its impedance matching bandwidth.