• The Journal of the Convergence on Culture Technology
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• v.8 no.1
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• pp.261-269
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• 2022

The advent of the pandemic era due to COVID-19 is causing new changes in all areas of individuals, organizations, society and the country. The art market also faced a crisis due to restrictions on individual movement between regions and countries and social distancing, and even the contents of the work, the way the work is traded, and the propensity and characteristics of the buyer are changing. These demands for change in the art market are accelerating new opportunities for change by converting digital, expanding the online art market, expanding virtual space using VR(Virtual Reality) and AR(Augmented Reality) technology, and expanding the trading area of digital works NFT based on blockchain technology. In this study, the flow of change in the art market brought about by the Pandemic era is analyzed from the perspective of digital transformation. The contents of digital acceptance of the art market are identified through a summary of various types of digital transformation in the art market and a survey of perceptions following the introduction of digital transformation and NFT. Discuss major legal, economic, social, and transactional issues and countermeasures following the introduction of NFT based on blockchain technology in the art market.

• Proceedings of the Korea Water Resources Association Conference
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• 2020.06a
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• pp.59-59
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• 2020

온실가스 증가로 전구평균기온은 지속적으로 상승하고 있으며, 이러한 지구시스템 변화는 수자원의 시·공간적인 변동을 증대시킬 것으로 전망된다. 보다 적극적인 기후변화 대응을 위해 2015년 파리협정이 채택됨에 따라 전 세계에서는 온실가스 감축을 실천하고 있으며, 선진국에서는 산업화 이전 대비 1.5℃ 및 2.0℃ 전구기온상승에 따른 분야별 영향평가 및 적응방안을 마련하고 있다. 그러나 국내의 경우 아직까지 전구기온 상승에 따른 수자원 영향평가가 미흡한 실정이다. 본 연구에서는 AR5 기후변화 시나리오를 기반으로 1.5℃ 및 2.0℃ 전구기온 상승으로 인한 국내 수자원 변화 특성을 분석하였다. 이를 위해 몬순특성을 고려하여 적정 5 GCMs을 선정하였으며, 시간샘플링 기법을 활용하여 1.5℃ 및 2.0℃ 전구기온 상승시기를 추정하였다. 통계적상세화 기법을 적용하여 상세 기후변화 시나리오를 생산하고, 수문모형(VIC)에 적용하여 미래 수문변화를 전망하였다. 과거 대비 1.5℃, 2.0℃ 전구기온 상승에 따른 수문기상인자의 변화를 분석한 결과 연평균 강수량 및 유출량은 전구기온상승에 따라 증가하며, 계절별 변동성은 심화될 것으로 전망되었다. 유출량의 변화는 강수량 변화경향과 대체로 일치하였으나, 강수량 대비 전망결과의 불확실성이 크게 나타났다. 한편, 수문순환은 전 지역에서 가속화되는 것으로 확인되었으며, 모든 GCM의 전망결과에서 동일한 경향을 보였다. 수문기상인자(강수량, 증발산량, 유출량)의 강도별 발생빈도 및 총량은 저강도 구간에서 감소, 고강도 구간에서 증가하는 것으로 분석되었다. 이러한 특성은 강수량 및 유출량의 극대값 증가에 기여하여 수자원 관리의 어려움을 가중시킬 것으로 예상된다.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.44-50
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• 2001

Metal oxide semiconductor (MOS) structures containing nanocrystals are fabricated by using rapid thermal oxidations of amorphous silicon films. The amorphous films are deposited either by electron beam deposition method or by electron beam deposition assisted by Ar ion beam during deposition. Post oxidation of e-beam deposited film results in relatively small hysteresis of capacitance-voltage (C-V) and the flat band voltage shift, $\DeltaV_{FB}$ is less than 1V indicative of the formation of low density nanocrystals in $SiO_2$ near $SiO_2$/Si interface. By contrast, we observe very large hysteresis in C-V characteristics for oxidized ion-beam assisted e-beam deposited sample. The flat band voltage shift is larger than 22V and the hysteresis becomes even broader as increasing injection times of holes at accumulation condition and electrons at inversion condition. The result indicates the formation of slow traps in $SiO_2$ near $SiO_2$/Si interface which might be related to large density nanocrystals. Roughly estimated trap density is $1{\times}10^{13}cm^{-2}$. Such a large hysteresis may be explained in terms of the activation of adatom migration by Ar ion during deposition. The activated migration may increase nucleation rate of Si nuclei in amorphous Si matrix. During post oxidation process, nuclei grow into nanocrystals. Therefore, ion beam assistance during deposition may be very feasible for MOS structure containing nanocrystals with large density which is a basic building block for single electron memory device.

• Journal of Sensor Science and Technology
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• v.12 no.1
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• pp.1-9
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• 2003

CsI single crystals doped with lithium, potassium or rubidium were grown by using Czochralski method at Ar gas atmosphere. The energy resolutions of CsI(Li:0.2 mole%), CsI(K:0.5 mole%) and CsI(Rb:1.5 mole%) scintillators were 14.5%, 15.9% and 17.0% for $^{137}Cs$(0.662 MeV), respectively. The energy calibration curves of CsI(Li), CsI(K) and CsI(Rb) scintillators were linear for $\gamma$-ray energy. The time resolutions of CsI(Li:0.2 mole%), CsI(K:0.5 mole%) and CsI(Rb:1.5 mole%) scintillators measured by CFT(constant-fraction timing method) were 9.0 ns, 14.7 ns and 9.7 ns, respectively. The fluorescence decay times of CsI(Li:0.2 mole%) scintillator had a fast component and slow one of ${\tau}_1=41.2\;ns$ and ${\tau}_2=483\;ns$, respectively. The fluorescence decay times of CsI(K:0.5 mole%) scintillator were ${\tau}_1=47.2\;ns$ and ${\tau}_2=417\;ns$. And the fluorescence decay times of CsI(Rb:1.5 mole%) scintillator were ${\tau}_1=41.3\;ns$ and ${\tau}_2=553\;ns$. The phosphorescence decay times of CsI(Li:0.2 mole%), CsI(K:0.5 mole%) and CsI(Rb:1.5 mole%) scintillators were 0.51 s, 0.57 s and 0.56 s, respectively.

• Resources Recycling
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• v.13 no.5
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• pp.45-50
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• 2004

To investigate the characteristics of phases formed in iron carbides, super iron carbide was synthesized from hematite fines with $CO-H_2$ gas mixture after reduction under $H_2$ gas at $600^{\circ}C$. Before carburization, the surface of iron powder reduced was pre-treated in the atmosphere of 0.05 vol% $NH_3$-Ar. The synthesized iron carbides were comprehensively explored by C/S analyzer(Low C/S determinator), M$\"{o}$ssbauer spectroscopy, X-ray diffraction patterns(XRD), scanning electron microscopy(SEM), transmission electron microscopy(TEM), and Raman spectroscopy at various reaction time of 5, 10, 15, 20, 25, 30, and 35 min, respectively. By adding a small amount of $NH_3$ gas, the super iron carbides containing 10 wt% carbon were synthesized, and its addition stabilized iron carbides. It was found that the $NH_3$ treatment played a major role in the formation of iron carbide without decomposition($Fe_3C{\to}$3Fe+C) of iron carbides and precipitation of free carbon. It also succeed to synthesize super iron carbide, $Fe_5C_2$, as a stable single phase without involving Fe and $Fe_3C$ phases.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.410-410
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• 2013

Next-generation nonvolatile memory (NVM) has attracted increasing attention about emerging NVMs such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory and resistance random access memory (RRAM). Previous studies have demonstrated that RRAM is promising because of its excellent properties, including simple structure, high speed and high density integration. Many research groups have reported a lot of metal oxides as resistive materials like TiO2, NiO, SrTiO3 and ZnO [1]. Among them, the ZnO-based film is one of the most promising materials for RRAM because of its good switching characteristics, reliability and high transparency [2]. However, in many studies about ZnO-based RRAMs, there was a problem to get lower current level for reducing the operating power dissipation and improving the device reliability such an endurance and an retention time of memory devices. Thus in this paper, we investigated that highly reproducible bipolar resistive switching characteristics of W doped ZnO RRAM device and it showed low resistive switching current level and large ON/OFF ratio. This may be caused by the interdiffusion of the W atoms in the ZnO film, whch serves as dopants, and leakage current would rise resulting in the lowering of current level [3]. In this work, a ZnO film and W doped ZnO film were fabricated on a Si substrate using RF magnetron sputtering from ZnO and W targets at room temperature with Ar gas ambient, and compared their current levels. Compared with the conventional ZnO-based RRAM, the W doped ZnO ReRAM device shows the reduction of reset current from ~$10^{-6}$ A to ~$10^{-9}$ A and large ON/OFF ratio of ~$10^3$ along with self-rectifying characteristic as shown in Fig. 1. In addition, we observed good endurance of $10^3$ times and retention time of $10^4$ s in the W doped ZnO ReRAM device. With this advantageous characteristics, W doped ZnO thin film device is a promising candidates for CMOS compatible and high-density RRAM devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• Journal of The Korean Astronomical Society
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• v.29 no.spc1
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• pp.429-432
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• 1996

An x-ray astronomy experiment consisting of three collimated proportional counters and an X-ray Sky Monitor (XSM) was flown aboard the Indian Satellite IRS-P3 launched on March 21, 1996 from SHAR range in India. The Satellite is in a circular orbit of 830 km altitude with an orbital inclination of $98^{\circ}$ and has three axis stabilized pointing capability. Each pointed-mode Proportional Counter (PPC) is a multilayer, multianode unit filled with P-10 gas ($90\%$ Ar + $10\%\;CH_4$) at 800 torr and having an aluminized mylar window of 25 micron thickness. The three PPCs are identical and have a field of view of $2^{\circ}{\times}2^{\circ}$ defined by silver coated aluminium honeycomb collimators. The total effective area of the three PPCs is about 1200 $cm^2$. The PPCs are sensitive in 2-20 keV band. The XSM consists of a pin-hole of 1 $cm^2$ area placed 16 cm above the anode plane of a 32 cm$\times$32 cm position sensitive proportional counter sensitive in 3-8 keV interval. The position of the x-ray events is determined by charge division technique using nichrome wires as anodes. The principal objective of this experiment is to carry out timing studies of x-ray pulsars, x-ray binaries and other rapidly varying x-ray sources. The XSM will be used to detect transient x-ray sources and monitor intensity of bright x-ray binaries. Observations of black-hole binary Cyg X-1 and few other binary sources were carried out in early May and July-August 1996 period. Details of the x-ray detector characteristics are presented and preliminary results from the observations are discussed.

• Journal of the Korean Society of Marine Environment & Safety
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• v.29 no.2
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• pp.197-206
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• 2023

Recently, the international community, including the International Maritime Organization (IMO), has strengthened regulations on air pollution emissions of ships, and eco-friendly ships are actively being developed to reduce exhaust gas emissions. Among them, rotor sail (RS), a wind-assisted ship propulsion system, is attracting attention again. RS is a cylindrical device installed on the ship deck, that generates hydrodynamic lift using a magnus effect. This is a next generation eco-friendly auxiliary propulsion technology, and Enercon company, which developed RS-applied ships, announced that fuel savings of more than 30% are possible. In this study, optimal installation conditions such as RS spacing and arrangement type were selected when multiple RSs were installed on ships. AR=5.1, SR=1.0, and D_e/D was fixed at 2.0 according to the RS arrangement, and the wind direction was considered only for the unidirectional +y-axis. Regarding arrangement conditions, five conditions were set at 3D intervals in the +x-axis direction from 3D to 15D and five conditions in the +y-axis direction from 5D to 25D. C_L, C_D and aerodynamic efficiency (C_L/C_D) were compared according to the square(□) and diamond(◇) shape arrangements. Consequently, the effect of RS on the longitudinal distance was not significantly different. However, in the case of RS flow characteristics according to the transverse distance, the interaction effect of RS was the greatest when the two RSs almost matched the wind direction. In the case of the RS flow characteristics according to the arrangement, notably, when the wind blew in the forward (0°) direction, the diamond (◇) arrangement was least affected by the backward flow between RSs.