• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.493-496
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• 1999

Ni/3C-SiC 옴믹 접합에 대한 미세구조적-접합 특성과의 상관관계를 규명하였다. 3C-SiC 웨이퍼 위에 저저항 전면 옴믹 적합층을 형성하기 위하여 Ni(t=300$\AA$)을 thermal evaporator를 사용하여 증착하고, 50$0^{\circ}C$, 80$0^{\circ}C$, 103$0^{\circ}C$ 온도에서 30분간(Ar 분위기) 열처리 한 후, scratch test를 실행하여 Ni/3C-SiC의 접착력 특성을 조사하였다. 여러 다른 온도에 따른 Ni/3C-SiC 층의 표면과 계면의 미세구조는 X-ray scattering 법을 사용하였다. 50$0^{\circ}C$ 에서 열처리된 Ni/3C-SiC 층은 가장 낮은 계면 평활도와 가장 높은 표면 평활도를 나타내었다. Ni/3C-SiC 접착력 분석에서 500 $^{\circ}C$ 열처리된 시편의 측정된 임계하중 값은 As-deposited 시편(12 N~ 13 N)보다 훨씬 낮은 2 N~3 N 범위의 값을 보였으나, 열처리 온도가 증가함에 따라 다시 높아지는 경향을 보였다. 미세구조 특성에서는 열처리 온도가 500 $^{\circ}C$ 이상에서는 NiSi$_2$silicides의 domain size는 결정성의 향상에 따라 증가되었다. 결정성 향상이 3C-SiC와 silicides 사이의 격자상수의 낮은 불일치를 완화시키는데 기여 하였 다.

• 한국초전도ㆍ저온공학회논문지
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• 제16권2호
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• pp.24-28
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• 2014

Magnesium diboride superconductor is still of considerable interest because of its appealing characteristics towards application mainly at around 20 K. Unlike Nb-based superconductors, $MgB_2$ can be operated by cryogen-free cooler which provides a cost effective alternative at low field of around 2-5 T. To explore this operating field region considerable efforts are necessary to marginally improve the superconducting properties of $MgB_2$. Under this situation, even the heat treatment environment during the synthesis is considered as an important factor. The addition of $H_2$ gas in small amount with Ar as a mixed gas during annealing has an adverse effect on the superconducting properties of $MgB_2$. It is although interesting to find that the presence of Mg vapor along with hydrogen during heat treatment results in the appreciable improvement in the flux pinning and the overall response of the critical current density for the ex-situ $MgB_2$ samples.

• 한국전기전자재료학회논문지
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• 제11권5호
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• pp.418-422
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• 1998

The Co-Cr films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrate. In this study, we investigated the possibility of employing FTS system for depositing Co-Cr films. The Co-Cr thin films were deposited with various sputter gas pressure($P_Ar$, 0.1~10mTorr) by using FTS apparatus at temperature of $40^{\circ}C and 220^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry (XRD) and vibrating sample magnetometer(VSM), respectively. Under argon gas pressure at 0.1mTorr, films with morphologically dense microstructure, good c-axis orientation and higher coercivity were obtained. It has been confirmed that the FTS system is very useful for preparing Co-Cr thin film recording media.

• 한국에너지공학회:학술대회논문집
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• 한국에너지공학회 2004년도 추계 학술발표회 논문집
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• pp.133-138
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• 2004

Proton exchange membrane fuel cell (PEMFC) is considered as a clean and efficient energy conversion det ice for mobile and stationary applications. Anions all the components of the PEMFC, the interface between the electrolyte ,and electrode catalyst plays an important role in determining tile cell performance since the electrochemical reactions take place at the interface in contact with tile reactant gases. Therefore, to increase the interface area and obtain a high-performance PEMFC, surface of the electrolyte membrane was roughened by Ar$^{+}$ beam bombardment. The results imply that by modifying surface of the electrolyte membrane, platinum loading can be reduced significantly without performance loss. To optimize the surface treatment condition, effects of ion dose density on characteristics of the membrane/electrode interface were examined by measuring the cell performance, impedance spectroscopy, and cyclic voltammograms. Surface of the modified membranes were characterized using scanning electron microscopy and FT-IR.R.

• 전자통신동향분석
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• 제34권6호
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• pp.61-70
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• 2019

Recently, research and development for next-generation mobile communication and short-range wireless communication has begun worldwide along with the provision of commercial services of 5G mobile communication technology. In response to this trend, the THz band has attracted considerable attention as a frequency band for transmitting 100 Gbps of large-capacity wireless data. For communication in the THz band, research and development of approaches based on photonics and electronics is being actively performed; the configurations, characteristics, and performances of these two methods for THz transmission have been seriously examined. Among them, we reviewed the technical issues in implementing THz wireless transmission technology using photonics technology. We also introduced the Electronic and Telecommunications Research Institute's (ETRI) development of photonics-based THz short-range transmission technology starting from 2019 and including some initial results. In the near future, 100 Gbps high-capacity wireless data transmission technology utilizing photonics technology is expected to be commercially available and applied to various applications, such as 3D hologram transmission, uncompressed large capacity medical data transmission, and multiple augmented reality/virtual reality (AR/VR).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.268-268
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• 2012

Atmospheric pressure microwave induced plasmas are used to excite and ionize chemical species for elemental analysis, for plasma reforming, and for plasma surface treatment. Microwave plasma differs significantly from other plasmas and has several interesting properties. For example, the electron density is higher in microwave plasma than in radio-frequency (RF) or direct current (DC) plasma. Several types of radical species with high density are generated under high electron density, so the reactivity of microwave plasma is expected to be very high [1]. Therefore, useful applications of atmospheric pressure microwave plasmas are expected. The surface characteristics of SUS304 stainless steel are investigated before and after surface modification by microwave plasma under atmospheric pressure conditions. The plasma device was operated by power sources with microwave frequency. We used a device based on a coaxial transmission line resonator (CTLR). The atmospheric pressure plasma jet (APPJ) in the case of microwave frequency (880 MHz) used Ar as plasma gas [2]. Typical microwave Pw was 3-10 W. To determine the optimal processing conditions, the surface treatment experiments were performed using various values of Pw (3-10 W), treatment time (5-120 s), and ratios of mixture gas (hydrogen peroxide). Torch-to-sample distance was fixed at the plasma edge point. Plasma treatment of a stainless steel plate significantly affected the wettability, contact angle (CA), and free energy (mJ/$m^2$) of the SUS304 surface. CA and ${\gamma}$ were analyzed. The optimal surface modification parameters to modify were a power of 10 W, a treatment time of 45 s, and a hydrogen peroxide content of 0.6 wt% [3]. Under these processing conditions, a CA of just $9.8^{\circ}$ was obtained. As CA decreased, wettability increased; i.e. the surface changed from hydrophobic to hydrophilic. From these results, 10 W power and 45 s treatment time are the best values to minimize CA and maximize ${\gamma}$.

• 복식
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• 제25권
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• pp.5-20
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• 1995

The fashion of late Yi dynasty had explored a possibility of new fashional beauty from its own experiences throughout the history of Korean fashion excluding any interference of foreign fashions, and brought out some characteristics ; first, the aesthetical value focused on the more human fashion resulted in the exposure of waist. This aesthetical change in the fashion of late Yi dynasty produced out results as follows ; the length and width of jacket became short and narrow maintaining the basic form, while the width of skirt became increased to be contrasted exceptionally with the upper coat. This mode of fashion reveals the transitional movement from the emphasis on balance to that on unbalance in the late period of Yi dynasty. But regarding the fact that the proportional change by the ways of putting on skirt became to be similar to the golden ratio, we can see many examples throughout the folk paintings by Shin Yun bok, we find that the fashional beauty of that age pursued ideal harmony and unity all the time being in spite of its tendency toward non-refinement. Second, we see another peculiarity in the mode of woman's fashion from the paintings by Shin Yun-bok who always depicted the hu-man nature frankly. For example, the jacket became shorter to emphasize lady's slim waist, and underwears began to be exposed after the upper part of skirt had been to expose lady's waist while the bottom line pulled up highter than before. Thus, as the function of robe had changed from a mere means of covering into an expression of beauty, the fashion of late Yi dynasty began to express a perfectly new beauty possessing an erotic mood and sensu-ality of a woman, which was its inner aesthetic need. Third, this emergence of new fashional beauty made the mental value of man and the aesthetic views of that time quite different from the previous ones, and finally there came various expressions of a new beauty. There-fore, the woman's fashion of late Yi dynasty is noted for the exposure and emphasis on the body line of a woman after the aesthetic view-point had changed of time toward pragmatism and humanism, while upholding the traditions of Korean clothes and pride for the nation. And our ancestors realized very Korean fashional beauty by pursuing the expressional ways of gentle, indirect emphasis upon the feminine and natural beauty to exclude and ar-tificial, direct and straightforward exposures and images.

• 천문학회보
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• 제35권1호
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• pp.28.2-28.2
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• 2010

We have investigated seven Extreme-Ultraviolet (EUV) bright points in the active region (AR 10926) on 2006 December 2 by the EUV imaging spectrometer (EIS) onboard Hinode spacecraft. We determined their Doppler velocities and non-thermal velocities from 15 EUV spectral lines (log T=4.7-7.2) by fitting each line profile to a Gaussian function. We present the Doppler velocity map as a function of temperature which corresponds to a different height. As a result, these active region bright points show two different types of characteristics. Type 1 bright point shows a systematic increase of Doppler velocity from -68 km/s (blue shift) at log T=4.7 to 27 km/s (red shift) at log T=6.7, while type 2 bright points have Doppler velocities in the range of -20 km/s and 20 km/s. Using MDI magnetograms, we found that only type 1 bright point was associated with the canceling magnetic feature at the rate of $2.4{\times}10^{18}$ Mx/hour. When assuming that these bright points are caused by magnetic reconnection and the Doppler shift indicates reconnection out flow, the pattern of the Doppler shift implies that type 1 bright point should be related to low atmosphere magnetic reconnection. We also determined electron densities from line ratio as well as temperatures from emission measure loci using CHIANTI atomic database. The electron densities of all bright points are comparable to typical values of active regions (log Ne=9.9-10.4). For the temperature analysis, the emission loci plots indicate that these bright points should not be isothermal though background is isothermal. The DEM analysis also show that while the background has a single peak distribution (isothermal), the EUV bright points, double peak distributions.

• 한국작물학회지
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• 제38권5호
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• pp.413-417
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• 1993

우리나라 japonica 벼의 일대잡종을 다양하게 육성할 목적으로 세포질 유전자적 웅성불임인 BTCMS에 대한 임성회복력이 있는 계통 AR-3을 교잡하여 그 F1을 모본으로 하고 조ㆍ중ㆍ만생의 한국 japonica형 벼 4품종씩을 교본 반복친으로 5회 backcross하여 우리나라 벼 품종 배경의 우엉불임 계통과 임성회복계통을 육성하고 이들의 주요 작물학적 특성을 각각의 반복친과 비교한 결과를 요약하면 다음과 같다. 1. 우리나라 japonica형 품종의 배경을 갖는 세포질 유전자적 웅성불임계통을 조ㆍ중ㆍ만생군으로 각각 4개씩 도합 12계통 육성하였으며, 동일한 품종의 배경을 갖는 임성회복계통친도 조ㆍ중ㆍ만생군으로 각각 4개씩 12계통 육성하였다. 2. 육성된 웅성불임계통은 조중군에서 소백벼 A, 오대벼,A, 관악벼A, 대성벼A, 중생군에서 화진벼A, 팔달A, 수원 224A, 이리 386A, 만생군에서 낙동벼A, 팔굉A, 화청벼A 및 밀양 97A 등으로 명명하였다. 3. 육성된 임성회복계통은 조생군에서 소백벼R, 오대벼R, 팔달R, 수원 224R, 이리 386R, 만생군에서 낙동벼R, 팔굉R, 화청벼R 및 밀양 97R 등으로 명명하였다. 4. 육성된 웅성불임계통들은 반복친(불임유지친)에 비하여 간장이 단축되는 경향이었으나 출수기, 수장 및 수량구성요소 등은 대체로 비슷하였다. 5. 육성된 임성회복계통들은 반복친과 비교하면 대체로 간장, 수장, 수량구성요소 및 수량의 차이가 없었다.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.114-120
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• 2012

In this research, we prepared Ga doped zinc oxide(ZnO:Ga, GZO) targets each difference sintering temperature $700^{\circ}C$, $800^{\circ}C$, and doping rate 1 wt.%, 2 wt.%, 3 wt.%. The characteristics of thin film on glass substrates which deposited by facing target sputtering in pure Ar atmosphere are reported. Ga doped zinc oxide film is attracted material through low resistivity, high transmittance, etc. When prepared target powder's structure was investigated by scanning electron microscope, densification and coarsening by driving force was observed. For each ZnO:Ga films with a $Ga_2O_3$ content of 3 wt.% at input power of 45W, the lowest resistivity of $9.967{\times}10^{-4}{\Omega}{\cdot}cm$ ($700^{\circ}C$) and $9.846{\times}10^{-4}{\Omega}{\cdot}cm$ ($800^{\circ}C$) was obtained. the carrier concentration and mobility were $4.09{\times}10^{20}cm^{-3}$($700^{\circ}C$), $4.12{\times}10^{20}cm^{-3}$($800^{\circ}C$) and $15.31cm^2/V{\cdot}s(700^{\circ}C)$, $12.51cm^2/V{\cdot}s(800^{\circ}C)$, respectively. And except 1 wt.% Ga doped ZnO thin film, average transmittance of these samples in the range 350-800 nm was over 80%.