• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.999-1002
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• 2004

We propose and simulate a new integrated DAC analog buffer composed of only p-type poly-Si TFTs in AMLCD and AMOLED. Proposed circuit employs a voltage level shifter which $V_{OUT}$ has a linear functional relation to $V_{IN}$. The proposed scheme enables to allow a constant $V_{GS}$ of buffer transistor so that the charging speed of pixel data address is improved.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.17-18
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• 2006

Flat Panel Displays (FPDs) have made a revolution in the display industry. TFT-LCD (Thin Film Transistor Liquid Crystal Display) has been the main player of FPD for last two decades. As the industry continuously develops the technology for better performance with lower cost is constantly demanded where several post LCD technologies are being developed. One of the prime candidates of post LCD technology is AMOLED (Active Matrix Organic Light Emitting Diode) that is considered to be an ideal FPD due to its extraordinary display performance and potentially low cost display structure. This technology has been accepted to small size display applications, such as cellular phone, PDA and PMP, etc. In this paper it is discussed that how this technology can be extended to large size display applications, such as TV. The technical issues and solutions of TFT backplane and color patterning of OLED materials are discussed and proposed

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1123-1126
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• 2005

For creation of low temperature polycrystallinesilicon (LTPS) the line beam excimer laser annealing (ELA) is a well known and established technique in mass production. With introduction of Sequential Lateral Solidification (SLS) some aspects such as crystalline quality, throughput and flexibility regarding the substrate size could be improved, but for OLED manufacturing still further process development is necessary. This paper discusses line beam ELA and SLS techniques that might enable process engineers to make polycrystalline-silicon (poly-Si) films with a high degree of uniformity and quality as required for system on glass (SOG) and active matrix organic light emitting displays (AMOLED). Equipment requirements are discussed and compared to previous standards. SEM images of process examples are shown in order to demonstrate the viability.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1297-1300
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• 2005

We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.

• Journal of the Optical Society of Korea
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• v.16 no.2
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• pp.181-184
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• 2012

We report, for the first time, operation frequency dependence of current density-voltage ($J_{OLED}-V_{OLED}$) shift for multi-layer organic light-emitting diodes (OLEDs). When the OLEDs were electrically stressed for 21 hours with 50% duty voltage pulses at 60, 120, 240, and 360 Hz, the JOLED-VOLED shifts were suppressed by half for 360 Hz operation compared with 60 Hz operation, but with little change in emission efficiencies. This frequency dependent $J_{OLED}-V_{OLED}$ shift is believed to be commonly observed for typical multi-layer OLEDs and can be used to further improve lifetime of digitally-driven active-matrix OLED displays.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.64.1-64.1
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• 2012

Next generation displays such as high performance LCD, AMOLED, flexible display and transparent display require specific TFT back-planes. For high performance TFT back-planes, low temperature poly silicon (LTPS), and metal-oxide semiconductors are studied. Flexible TFT backplanes require low temperature processible organic semiconductors. Not only development of active semiconducting materials but also design and synthesis of semiconductor corresponding gate dielectric materials are important issues in those display back-planes. In this study, we investigate the high heat resistant polymeric gate dielectric materials for organic TFT and inorganic TFT with good insulating properties and processing chemical resistance. We also controlled and optimized surface energy and morphology of gate dielectric layers for direct printing process with solution processible organic and inorganic semiconductors.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1032-1035
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• 2009

Several different production technologies for Low-Temperature Poly-Silicon (LTPS) have been proposed over the last years. However, finally the progress in Excimer-laser-based crystallization has lead to the best cost-to-performance ratio of LTPS manufacturing for use in active-matrix-based displays. In this paper, we report on recent and significant technical advances in light sources, optical beam deliveries and beam irradiation systems targeted at enabling ultra-uniform mura-free LTPS active-matrix backplanes while simultaneously lowering production costs and increasing throughput.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.833-836
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• 2007

A low power and small area source driver using LTPS TFTs is proposed for mobile applications. This source driver adopts level shifter with holding latch function and new R-to-R type digital-to-analog converter (DAC). The power consumption and layout area of the proposed source driver are reduced by 23% and 25% for 16M colors and qVGA AM-OLED panel, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.8-11
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• 2007

The new technologies in mobile display developed in SEC are briefly reviewed. For a differentiation, SEC's LTPS line is based on SLS (Sequential Lateral Solidification) technology. In this paper, the characteristics of SEC's SLS in recent and future mobile displays were discussed. The microstructure produced by SLS crystallization is dependent on SLS process conditions such as mask design, laser energy density, and pulse duration time. The microstructure and TFT (Thin Film Transistor) performance are closely related. For an optimization of TFT performance, SLS process condition should be adjusted. Other fabrication processes except crystallization such as blocking layer, gate insulator deposition and cleaning also affect TFT performance. Optimized process condition and tailoring mask design can make it possible to produce high quality AMOLED devices. The TFT non-uniformity caused by laser energy density fluctuation could be successfully diminished by mixing technology.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.22-23
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• 2006

A new current-driving pixel circuit for active-matrix organic light-emitting diodes (AMOLEDs), composed of four organic thin-film transistors (OTFTs) and one capacitor, is proposed using a current scaling method. Designing pixel circuits with OTFTs has many problems due to the instability of the OTFT parameters with still unknown characteristics of the material. Despite the problems in using OTFTs to drive the pixel circuit, our work could be set as a goal for future OTFT development. The simulation results show enhanced linearity between input data and OLEO luminescence at low current levels as well as successfully compensating the variation of the OTFTs, such as the threshold voltage and mobility.