• Biotechnology and Bioprocess Engineering:BBE
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• v.10 no.5
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• pp.451-461
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• 2005

The effect of carbon dioxide on yeast growth was investigated during the cultivation of pH 5.0 and pH 6.8. by replacing the nitrogen part with carbon dioxide under aerobic conditions. The values of the specific growth rate under pH 5.0 and pH 6.8 conditions became 64.0% and 46.9%, respectively, compared to those before the change in gas composition. This suggests that the effect of carton dioxide was greater pronounced in pH 6.8 than in pH 5.0. The genome-wide transcriptional response to elevated carbon dioxide was examined using a DNA microarray. As for upregulated genes, it was noteworthy that 3 genes were induced upon entry into a stationary phase and 6 genes were involved in stress response. Of 53 downregulated genes, 22 genes were involved in the ribosomal biogenesis and assembly and 5 genes were involved in the lipid metabolism. These facts suggest that carbon dioxide could bring the cell conditions partially to a stationary phase. The ALD6 gene encoding for cytosolic acetaldehyde dehydrogenase was downregulated, which would lead to a lack of cell components for the growth. The downregulation of ALD6 was greater in pH 6.8 than in pH 5.0. consistent with physiological response. This suggests that it might be the most effective factor for growth inhibition.

• Korean Journal of Materials Research
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• v.28 no.5
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• pp.268-272
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• 2018

An $Al_2O_3/AlN$ bilayer deposited on GaN by atomic layer deposition (ALD) is employed to prepare $Al_2O_3/AlN/GaN$ metal-insulator-semiconductor (MIS) diodes, and their interfacial properties are investigated using X-ray photoelectron spectroscopy (XPS) with sputter etch treatment and current-voltage (I-V) measurements. XPS analyses reveal that the native oxides on the GaN surface are reduced significantly during the early ALD stage, indicating that AlN deposition effectively clelans up the GaN surface. In addition, the suppression of Al-OH bonds is observed through the ALD process. This result may be related to the improved device performance because Al-OH bonds act as interface defects. Finally, temperature dependent I-V analyses show that the barrier height increases and the ideality factor decreases with an increase in temperature, which is associated with the barrier inhomogeneity. A Modified Richardson plot produces the Richardson constant of $A^{**}$ as $30.45Acm^{-2}K^{-2}$, which is similar to the theoretical value of $26.4Acm^{-2}K^{-2}$ for n-GaN. This indicates that the barrier inhomogeneity appropriately explains the forward current transport across the $Au/Al_2O_3/AlN/GaN$ interface.

• Journal of the Semiconductor & Display Technology
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• v.8 no.2
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• pp.55-58
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• 2009

Density functional theory was used to investigate the adsorption and reaction of $HfCl_4$ with two hydroxyls on Si (001)-$2{\times}1$ surface in atomic layer deposition (ALD) process. We prepared a reasonable Si substrate which consisted of six inter-dimer dissociated $H_2O$ molecules and two intra-dimer dissociated $H_2O$ molecules. The $HfCl_4$must react with two hydroxyls to be a bulk-like structure. When $HfCl_4$ was adsorbed on a hydroxyl, there was energy benefit of -0.55 eV. Though there was energy loss for $HfCl_4$ to react with H of hydroxyl, thermal energy of ALD chamber would be enough to pass the energy barriers. There were five reaction pathways for $HfCl_4$ to react with two hydroxyls; inter-dimer, intra-dimer, cross-dimer, inter-row, and cross-row. Inter-row, inter-dimer and intra-dimer were relatively favorable among the five reaction pathways based on the energy difference. The electron densities between O and Hf in these three reactions were higher than the others and they had shorter Hf-O and O-O bond lengths than the other two reaction pathways.

• Korean Journal of Metals and Materials
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• v.49 no.6
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• pp.498-504
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• 2011

We examined the microstructure and optical properties of crystallized ~30 nm-ZnO/~10 nm amorphous $TiO_2$ nano bilayered films as nano electrodes were deposited at extremely low substrate temperatures of $150-210^{\circ}C$. The bilayered films were deposited on silicon substrates with 10 cm diameters by ALD (atomic layer deposition) using DEZn (diethyl zinc(Zn(C2H5)2)) and TDMAT (tetrakis dimethyl-amid $titanium(Ti(N(CH_3)_2)_4)$ as the ZnO and $TiO_2$ precursors, respectively, and $H_2O$ as the oxidant. The microstructure, phase, and optical properties of the bilayered films were examined by FE-SEM, TEM, XRD, AES, and UV-VIS-NIR spectroscopy. FE-SEM and TEM showed that all bilayered films were deposited very uniformly and showed crystallized ZnO and amorphous $TiO_2$ layers. AES depth profiling showed that the ZnO and $TiO_2$ films had a stoichiometric composition of 1:1 and 1:2, respectively. These bilayered films have optical absorption properties in a wide range of ultraviolet wavelengths, 250-390 nm, whereas the single ZnO and $TiO_2$ films showed an absorption range of 350-380nm.

• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.237-245
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• 2021

Atomic layer deposition (ALD) enhances the stability of cathode materials via surface modification. Previous studies have demonstrated that an Ni-rich cathode, such as LiNi_0.8Co_0.1Mn_0.1O₂, is a promising candidate owing to its high capacity, but is limited by poor cycle stability. In this study, to enhance the stability of the Ni-rich cathode, synthesized LiNi_0.8Co_0.1Mn_0.1O₂ was coated with Al₂O₃ using ALD. Thus, the surface-modified cathode exhibited enhanced stability by protecting the interface from Ni-O formation during the cycling process. The coated LiNi_0.8Co_0.1Mn_0.1O₂ exhibited a capacity of 176 mAh g^-1 at 1 C and retained up to 72% of the initial capacity after 100 cycles within a range of 2.8-4.3 V (vs Li/Li⁺. In contrast, pristine LiNi_0.8Co_0.1Mn_0.1O₂ presented only 58% of capacity retention after 100 cycles with an initial capacity of 173 mAh g^-1. Improved cyclability may be a result of the ALD coating, which physically protects the electrode by modifying the interface, and prevents degradation by resisting side reactions that result in capacity decay. The electrochemical impedance spectra and structural and morphological analysis performed using electron microscopy and X-ray techniques establish the surface enhancement resulting from the aforementioned strategy.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.418.2-418.2
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• 2016

$Al_2O_3$ passivation layer has excellent passivation properties at p-type Si surface. This $Al_2O_3$ layer forms thin $SiO_2$ layer at the interface. There were some studies about inserting thermal oxidation process to replace naturally grown oxide during $Al_2O_3$ deposition. They showed improving passivation properties. However, thermal oxidation process has disadvantage of expensive equipment and difficult control of thin layer formation. Wet chemical oxidation has advantages of low cost and easy thin oxide formation. In this study, $Al_2O_3$/$SiO_2/Si(100)$ interface was formed by wet chemical oxidation and PA-ALD process. $SiO_2$ layer at Si wafer was formed by $HCl/H_2O_2$, $H_2SO_4/H_2O_2$ and $HNO_3$, respectively. 20nm $Al_2O_3$ layer on $SiO_2/Si$ was deposited by PA-ALD. This $Al_2O_3/SiO_2/Si(100)$ interface were characterized by capacitance-voltage characteristics and quasi-steady-state photoconductance decay method.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.41-45
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• 2018

Two-dimensional (2D) materials have been studied extensively due to their excellent physical, chemical, and electrical properties. Among them, we report the material and device characteristics of tin disulfide ($SnS_2$). To apply $SnS_2$ as a channel layer in a transistor, $SnS_2$ channels were formed by a stripping method and a transfer method. The limitation of this method is that it is difficult to produce uniform device characteristics over a large area. Therefore, we directly deposited $SnS_2$ by atomic layer deposition (ALD) and then performed lithography. This method was able to produce devices with repeatable characteristics over a large area. However, the $SnS_2$ film was damaged by the acetone used as a photoresist (PR) developer during the lithography process, with the electrical properties of mobility of $2.6{\times}10^{-4}cm^2/Vs$, S.S. of 58.1 V/decade, and on/off current ratio of $1.8{\times}10^2$. These results are not suitable for advanced electronic devices. In this study, we analyzed the effect of acetone on $SnS_2$ and studied the device process to prevent such damage. Using polyvinyl alcohol (PVA) as a passivation layer during the lithography process, the electrical characteristics of the $SnS_2$ transistor had $2.11{\times}10^{-3}cm^2/Vs$ of mobility, 11.3 V/decade of S.S, and $2.5{\times}10^3$ of the on/off current ratio, which were 10x improvements to the $SnS_2$ transistor fabricated by the conventional method.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.121.2-121.2
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• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.13-14
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• 2008

$Al_2O_3$ thin films were deposited on GaN (0001) by remote plasma atomic layer deposition (RPALD) technique using trimethylaluminum (TMA) precursor and oxygen radicals in the temperature range of 25 ~ $500^{\circ}C$. Growth rate per cycle was varied with substrate temperature from 1.8 $\breve{A}$/ cycle at $25^{\circ}C$ to 0.8 $\breve{A}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_2O_3$ thin films was studied using X-ray photo electron spectroscopy (XPS). Excellent electrical properties of $Al_2O_3$/GaN MIS capacitor were grown at $300^{\circ}C$ process temperature.

• Journal of the Korean Society for Railway
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• v.9 no.6 s.37
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• pp.701-704
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• 2006

The catenaries must guarantee the constant electricity to the trains, so that the safety and the estimate of fatigue degree and the inspection of abrasion degree should be done rapidly. This thesis proposes the system that can manage the performance/failure of the catenaries using the image process as the solution for the weak points of the existing inspection such as the decrease of immediateness and the lack of constancy in the human resources. This study simulates the ALD using VHSV (Virture HSV) which is the unreal HSV images, not getting the real HSV in ages to the image processing technique that repeats the erosion and the expansion of the images as the methods that can monitor the slight/critical defects of the catenaries as dealing with the result of the catenaries inspection images. The final ALD (Abnormal Line Detection) system is designed based on this simulation. I have demonstrated it with the VHSV (Virture HSV) virtual images as the materials of the test and inspected it through testing the defects of the catenaries for the thesis.