• Korean Journal of Crystallography
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• v.16 no.2
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• pp.107-127
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• 2005

Five Cu(II) compounds were obtained from different copper salts with btp ligands, and their structures were determined by X-ray crystallography. The structure of coordination polymer 2 contains btp-bridged tetranuclear Cu(II) units weakly connected by nitrate ions, and the structure of a discrete Cu(II) molecule 1 contains acetates and btp ligands. With perchlorate anions, two btp ligands bridge Cu(II) ions to form a double zigzag chain 3, while a single zigzag chain 4 is created with sulfate anions. The reaction of $Cu(NO_{3})_{2}$ containing $NH_{4}PF_{6}$ with btp ligands also produced a polymeric compound 5 containing $Cu(H_{2}O)_{2}^{2+}$ and $Cu(NO_{3})_{2}$ units alternatively bridged by btp ligands with H-bonds between copper bonded water and nitrate oxygen atoms. Five Zn(II) compounds were obtained from different zinc salts with btp ligands, and the structures of polymeric compounds (6, 7 and 8) and monomeric compounds (9 and 10) were determined by X-ray crystallography. With nitrate, chloride and bromide anions, btp ligands bridge Zn(II) ions to form polymeric compounds (6, 7 and 8), but btp ligands coordinate to a Zn(II) ion to form monomeric complexes (9 and 10) with $PF_{6}^{-}$ and perchlorate anions. Four silver salts and btp ligands produced two kinds of structures, dinuclear 20-membered rings and one-dimensional zigzag chain depending on different anions. For $ClO_{4}^{-}$ and OTf anions, weak interactions between Ag(I) and anions make dinuclear 20-membered rings construct polymeric compounds (11 and 13). For $PF_{6}^{-}$ anion, there are also weak interactions between Ag(I) and $F(PF_{6}^{-})(12)$, but they do not construct a polymeric compound. For $O_{2}CCF_{3}^{-}$ anion, btp ligands bridge Ag(I) atoms to make one-dimensional zigzag chain (14), and there are also interactions between Ag(I) and anions.

• Journal of the Korea Furniture Society
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• v.16 no.1
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• pp.1-8
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• 2005

This experiment was carried out to investigate the gluing characteristics of poly vinyl acetate emulsion adhesive(PVAc) on the Cryptomeria japonica laminated boards. This sample trees are major planting species and have been planted in southern district for a long time. The optimum gluing conditions for laminated board were summarized as follows; the amount of spreading glue, assembly time, clamping pressure, and clamping time for PVAc resin were $200g/m^2$, 10min., $5kg/cm^2$, and 6hrs., respectively, and the relative formulae between extension ratio(x) and block shear strength(y) was $y=-9.6x+85.2(R^2=0.95)$.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.79-87
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• 1998

Melt spun YbBa2Cu3Agx(x=0, 5, 12, 16 and 53) precursor alloy ribbons were oxidized at 263-330$^{\circ}C$ and treated at 820$^{\circ}C$, 855$^{\circ}C$ and 885$^{\circ}C$ under 1.0 atm oxygen pressure. In the ribbons treated at 820$^{\circ}C$, 855$^{\circ}C$and 885$^{\circ}C$ 1-2-4 phase (YbBa2Cu4O8) and 1-2-3 phase (YbBa2Cu3O{{{{ OMICRON _7-$\delta$ }})were formed respectively. The shape of 1-2-4 phase was distorted or ellipsoid. The 2-4-7 and 1-2-3 phases tooked the shape of bar. All the ribbons showed zero critical current density Jc at 77K in zero magnetic field. By considering the shape and the highest critical temperature (among the three phases) of the 1-2-3 phase we tried to increase the critical current density of the ribbons treated at 885$^{\circ}C$ by press deformation. About tenribbons were stacked and coupled by press deformation and then treated at 885$^{\circ}C$ These 1-2-3 phase did not show any texture in any of the ribbons. However they exhibited weak texture in the multilayered specimens. Among the multilayered specimens YbBa2Cu3Ag16 exhibited a Jc of 180 A/cm2 Among the above ribbons YbBa2Cu3Ag16 ribbon has the optimum composition to produce textured superconducting oxide with improved Jc by press deformation. Onset critical temperatures Ton of the multilayered YbBa2Cu3Agx(x=5, 12, 16 and 53) were measured as 88-90 K.

• Bulletin of the Korean Chemical Society
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• v.5 no.3
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• pp.117-121
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• 1984

The structure of $CS_{7.3}Ag_{4.7}Si_{12}Al_{12}O_{48}$, vacuum dehydrated zeolite A with all Na+ ions replaced by $Cs^+$ and $Ag^+$ as indicated, has been determined by single-crystal x-ray diffraction techniques in the cubic space group, Pm3m (a = 12.282 (1) ${\AA}$). The structure was refined to the final error indices $R_1$$R_2$ (weighted) = 0.099 using 347 independent reflections for whind intlch $I_0\;>\;3{\sigma}(I_0)$. Although deydration occurred at $360^{\circ}C$, no silver atoms or clusters have been observed. The 8-ring sites are occupied only by $Cs^+$ ion, and the 4-ring sites only by a single $Ag^+$ ion. The 6-ring sites contain $Ag^+$ and $Cs^+$ ions with $Ag^+$ nearly in 6-ring planes and $Cs^+$ well off them, one on the sodalite unit side. With regard to the 6-rings, the structure can be represented as a superposition of two types of unit cells: about 70 % have $4Ag^+$ and $4Cs^+$ ions, and the remaining 30 % have $3Ag^+$ and $5Cs^+$. In all unit cells, $3Cs^+$ ions lie at the centers of the 8-rings at sites of D4h symmetry; these ions are approximately 0.3 ${\AA}$ further from their nearest framework-oxygen neighbors than the sum of the appropriate ionic radii would indicate. To minimize electrostatic repulsions, the $Cs^+$ ions at Cs(1) are not likely to occupy adjacent 6-rings in the large cavity; they are likely to be tetrahedrally arranged when there are 4.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.23-28
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• 2004

We utilized Ag capping layer for fluxless bonding. To investigate the effect of Ag capping layer, two sets of sample were used. One set was bare In and Sn solders. The other set was In and Sn solders with Ag capping layer. In ($10{\mu}m$) and Sn ($10{\mu}m$) solders were deposited on Cu/Ti/Si substrate using thermal-evaporation, and Ag ($0.1{\mu}m$) capping layers were deposited on In and Sn solders. Solder joints were made by joining two In and Sn deposited specimens at $130^{\circ}C$ for 30 s under 0.8, 1.6, 3.2 MPa using thermal compression bonder. The contact resistance was measured using four-point probe method. The shear strength of the solder joints was measured by the shear test of cross-bar sample in the direction. The microstructure of the solder joints was characterized with SEM and EDS. In and Sn solders without Ag capping layers were only bonded at $130^{\circ}C$ under high bonding pressure. Also the shear strength of the In-Sn solder joints under was lower than that of the Ag/In-Ag/Sn solder joints. The resistance of the solder joints was $2-4\;m{\Omega}$ The solder joints consisted of In-rich phase and Sn-rich phase and the intermixed compounds were found at the interface. As bonding pressure increased, the intermixed compounds formed more.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.592-592
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• 2013

We synthesized BiOI nanostructures with various doped-concentrations of Ag (0.1, 1.0, 5.0, 10.0 mol%) and Ti (1.0, 5.0, 10.0, 30.0, 50.0 mol%). They show spherical echinoid-like structures examined by scanning electron microscope. The BET surface areas were measured to be in the range of 40~70 $m^2$/g, which is reduced by doping. The indirect band gap was estimated to be 1.8 eV for undoped BiOI with no change and 1.0 eV increase upon Ag and Ti doping, respectively. The structures were further examined by X-Ray diffraction analysis, FT-IR, and photoluminescence. We also demonstrated adsorption and photocatalytic degradation performances for methyl orange and Rhodamine B on the echinoid-like BiOI structures.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.127-131
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• 1997

The crystal structure of a bromine sorption complex of vacuum-dehydrated Ag+ and Ca2+ exchanged zeolite A(a=12,234(1) Å) has been determined by single-crystal X-ray diffraction methods in the cubic space group Pm3m. The crystal was prepared by flow method using exchange solution in which mole ratio of AgNo3 and Ca(NO3)2 was 1:150 with a total concentration of 0.05M. The crystal was dehydrated at 360℃ and 2 ×10-6 Torr for 2days, followed by exposure to 180 Torr of Br2 vapor for 20min. full-matrix least-squares refinements converged to the final error indices of R1=0.111 and R2=0.101 using 90 reflections for which I>3o(I). About 3.1 Ag+ ions and 4.45 Ca2+ ions lie on the two crystallographically nonequivalent three-fold axes associated with 6-ring oxygens. A total of six bromine molecules are sorbed per unit cell. Each bromine molecule approaches a framework oxide ions axially (Br-Br-O=171(2)', O-Br=3.25(6) Å; and Br-Br=2,61(8) Å by a charge-transfer interaction.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.179-180
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Society of Plant Pathology Conference
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• 2003.10a
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• pp.135.2-136
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• 2003

To characterize plasmids in Xanthomonu axonopodis pv. glycines, we isolated plasmids pAG1 from the strain AG1 and pXAG81 and PXAG82 from the strain Bra, respectively, and sequenced three plasmids. The size of plasmids, pAG1, pXAG81, and pXAG82 was 15,149-base pairs (bp), 26,727-bp, and 1,496-bp, respectively Fifteen and twenty six possible open reading frames (ORFs) were present in pAG1 and pXAG81, respectively. Only one ORF homologous to a rep gene of Xylella fastidiosa was present in pXAG82. pAG1 contained genes homologous to avrBs3, tnpA, tnpR, repA, htrA, three parA genes, M.XmaI, R.XmaI, and six hypothetical proteins. pXAG81 contained genes homologous to avrBs3, tnpA, tnpR, repA, htrA, two parA genes, pemI, pemK, mobA, mobB, mobC, mobD, mobE, trwB, traF, traH, ISxac2, and eleven hypothetical proteins. Based on DNA sequence analysis, we presume that pXAG81 is a conjugal plasmid. Interestingly, we found 0.5-kb truncated avirulence gene similar to aurXacE3 on the right border of avrBs3 homolgs of pAG1 and pXAG81. Two hundred twenty five isolates were analyzed to find aurBS3 or tra gene homologs by Southern hybridization. The numbers of avrBs3 homolog varied from 3 in AG1 to 8 in AG166. Two hundred seventeen isolates appeared to can conjugative plasmids (pXAG81 type), and thirty eight isolates appeared to carry non-conjugative plamids (pAGl type). This indicated that aurBs3 gene homologs might be spread by conjugation in X. axonopodis pv. glycines.