• Tribology and Lubricants
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• v.21 no.3
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• pp.107-113
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• 2005

Micro/nano adhesion and friction properties of self-assembled monolayers (SAMs) with different head- and end-group were experimentally studied according to the coating methods. Various kinds of SAM having different spacer chains (C10 and C18), head-group and end-group were deposited onto Si-wafer by dipping and chemical vapour deposition (CVD) methods under atmospheric pressure, where the deposited SAM resulted in the hydrophobic nature. The adhesion and friction properties between tip and SAM surfaces under nano scale applied load were measured using an atomic force microscope (AFM) and also those under micro scale applied load were measured using a ball-on-flat type micro-tribotester. Surface roughness and water contact angles were measured with SPM (scanning probe microscope) and contact anglemeter respectively. Results showed that water contact angles of SAMs with the end-group of fluorine show higher relatively than those of hydrogen. SAMs with the end-group of fluorine show lower nano-adhesion but higher micro/nanofriction than those with hydrogen. Water contact angles of SAMs coated by CVD method show high values compared to those by dipping method. SAMs coated by CVD method show the increase of nano-adhesion but the decrease of nano-friction. Nano-adhesion and friction mechanism of SAMs with different end-group was proposed in a view of size of fluorocarbon molecule.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1176-1180
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• 1999

The adhesion strength and high temperature/high humidity reliability of polyetherimide (PEI) adhesive on silicon wafer after being treated by each reactive ion etching (RIE) Aluminum (Al)-chelate adhesion promoter were investigated. 180$^{\circ}$ peel test and <85$^{\circ}C$ 85%> humidity test were performed for the initial adhesion strength and high temperature/high humidity reliability, respectively. For investigating surface effect scanning electron microscope (SEM), atomic force microscope (AFM), deionized (DI)-water contact angle studies were carried out. To investigate RIE effect, PEI was treated with $^O_2$ RIE, and then laminated. The initial peel strength increased slightly from 1.6 kg/cm for the first 2 minutes, and then decreased. High temp/high humid resistance decreased rapidly by RIE etching. RIE treatment on PEI affected on both of roughness and hydrophilicity increase. Aluminum-chelate adhesion promoter was coated by spinning on silicon wafer. The initial peel strength showed no effect of adhesion promoter treatment, but high temp/high humidity resistance increased remarkably. Al-chelate adhesion promoter did not affect the roughness but increased hydrophilicity.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.313-320
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• 2011

100 nm-thick hydrogenated amorphous silicon $({\alpha}-Si:H)$ films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to $550^{\circ}C$. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >$400^{\circ}C$. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above $400^{\circ}C$ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at $550^{\circ}C$ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.81-88
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• 2006

Laterally self-aligned InGaAs/GaAs quantum-dots (QDs) have been fabricated by using a multilayer stacking technique. For the growth optimization, we vary the number of stacks and the growth temperature in the ranges of 1-15 periods and $500-540^{\circ}C$. respectively, Atomic force microscope (AFM) images and photoluminescence (PL) spectra reveal that the lateral alignment of QDs is enhanced in extended length by an increased stack period, but severely degrades into film-like wires above a critical growth temperature. The morphological and the photoluminescence characteristics of laterally self-aligned InGaAs QDs have been analyzed through mutual comparisons among four samples with different parameters. An anisotropic arrangement develops with increasing number of stacks, and high-temperature capping allows isolated QDs to be spontaneously organized into a one-dimensionally aligned chain-like shape over a few ${\mu}m$, Moreover, the migration time allowed by growth interruption plays an additional important role in the chain arrangement of QDs. The QD chains capped at high temperature exhibit blue shifts in the emission energy, which may be attributed to a slight outdiffusion of In from the InGaAs QDs.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.371-376
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• 2010

The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy (MBE) using the two-step method. The Si(100) substrates were cleaned with three different surface cleaning methods of vacuum heating, As-beam exposure, and Ga-beam deposition at the substrate temperature of $800^{\circ}C$ in the MBE growth chamber. Growth temperature and thickness of the GaAs epitaxial layer were $800^{\circ}C$ and $1{\mu}m$, respectively. The surface structure and properties were investigated by reflection high-energy electron diffraction (RHEED), AFM (Atomic force microscope), DXRD (Double crystal x-ray diffraction), PL (Photoluminescence), and PR (Photoreflectance). From RHEED, the surface structure of GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition is ($2{\times}4$). The GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition has a high quality.

• Composites Research
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• v.13 no.4
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• pp.42-53
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• 2000

A study has been made to establish an optimum condition in the surface treatment and curing method that is important for the fabrication of Al 7075/CFRP laminates. PAA(Phosphoric Acid Anodizing) provided a good adhesive strength and FPL(Sulfuric / Sodium Dichromate Acid Etching) had a similar adhesive strength with PAA. On the other hand, the poor adhesive strength was shown on vapor degrease and CAA(Chromic Acid Anodizing). By using the atomic force microscope(AFM), it was found that the PAA oxide surface obviously had a greater degree of microroughness as compared to vapor degrease, CAA and FPL treated surfaces. These results support the concept of a mechanical interlocking of the adhesive with-in the oxide pores as the predominant adhesion mechanism. In curing methods, the adhesive strength of co-curing method was higher than that of secondary curing method. With respect to stability of specimen shape, the secondary curing method was better than co-curing method. DMA(Dynamic Mechanical Analysis) test revealed $T_g$ in curing times over 60 min is nearly same, so it is estimated they will have similar degree of curing and joint durability in using FM300M adhesive film.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.77-81
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• 2011

Aluminum nitride (AlN) thin films were prepared by using nitrogen ion beam assisted reactive radio frequency (RF) magnetron sputtering on the glass substrates without intentional substrate heating. After deposition, the effect of nitrogen ion beam energy on the structural and optical properties of AlN films were investigated by x-ray diffraction (XRD), atomic force microscope (AFM) and UV-Vis. spectrophotometer, respectively. AlN films deposited with $N^+$ ion irradiation at 100 eV show the higher (002) peak intensity in XRD pattern than other films. It means that $N^+$ ion energy of 100 eV is the favorable condition for low temperature crystallization. AFM images also show that surface average roughness is increased from 1.5 to 9.6 nm with $N^+$ ion energy in this study. In an optical observation, AlN films which deposited by $N^+$ ion beam energy of 100 eV show the higher transmittance than that of the films prepared with the other $N^+$ ion beam conditions.

• Korean Chemical Engineering Research
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• v.52 no.4
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• pp.538-543
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• 2014

It is investigated that that the physical properties of Glutathione layer formed on gold surfaces may make an effect on the distribution of either gold particle adsorbed to the $ZrO_2$ surface or vice versa with the adjustment of the electrostatic interactions. For the investigation, the atomic force microscope (AFM) was used to measure the surface forces between the surfaces as a function of the salt concentration and pH value. The forces were quantitatively analyzed with the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory to estimate the surface potential and charge density of the surfaces for each condition of salt concentration and pH value. The estimated-value dependence on the salt concentration was described with the law of mass action, and the pH dependence was explained with the ionizable groups on the surface. The salt concentration dependence of the surface properties, found from the measurement at pH 4 and 8, was consistent with the prediction from the law. It was found that the Glutathione layer had higher values for the surface charge densities and potentials than the zirconium dioxide surfaces at pH 4 and 8, which may be attributed to the ionized-functional-groups of the Glutathione layer.

• Applied Chemistry for Engineering
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• v.25 no.6
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• pp.607-612
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• 2014

The physical properties of mercaptoundecanoic-acid layer formed on gold surfaces, which may affect the distribution of either gold particles adsorbed to the zirconium dioxide surface or vice versa, were investigated. To conduct this investigation, the surface forces were measured between the surfaces with respect to the salt concentration and pH value using atomic force microscope (AFM). The forces were quantitatively converted by the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory to the surface potential and charge density of surfaces. The converted-value dependence on the salt concentration and pH was described with the law of mass action, and the dependence was consistent with the theoretical prediction. It was found that the mercaptoundecanoic-acid layer had higher values for the surface charge densities and potentials than the $ZrO_2$ surfaces, which may be attributed to the ionized-functional-groups of the mercaptoundecanoic-acid layer.

• Journal of the Korean Applied Science and Technology
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• v.20 no.2
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• pp.94-100
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• 2003

We studied electrochemical characteristics of Langmuir-Blodgett(LB) films by using cyclic voltammetry with a three-electrode system. An Ag/AgCl as a reference electrode, a platinum wire as a counter electrode and LB film-coated indium tin oxide(ITO) as a working electrode were used to study electrochemical characteristics at a various concentration of $NaClO_4$ solution. LB films were reduced from initial potential to -1350 mV, continuously oxidized to l650mV and returned to the initial point. The scan rate was l00mV/s. The monolayer surface morphology of the LB film have been measured by Atomic Force Microscope(AFM). As a result, We comfirmed that the microscopic properties of LB film by AFM showed the good orientation of momolayer molecules and the thickness of monolayer was 3.5-4.lnm. The cyclic voltammograms(CV) of the ITO-coated glass showed the peak potentials for the reduction-oxidation reation. LB films of 4-octyl-4'-(5-carboxypentamethyleneoxy) azobenzene(8A5H) / L-${\alpha}$-phosphayidyl choline, dilauroyl(DLPC) seemed to be irreversible process caused by only the oxidation current from the cyclic voltammogram. The current of oxidatation increased at cyclic voltammogram by increasing 8A5H density in LB films. The diffusivity(D) of LB films increased with increasing of a 8A5H amount and was inversely proportional to the concentration of $NaClO_4$ solution.