• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.55-60
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• 2009

The channel backscattering coefficient and injection velocity have been extracted experimentally in 65nm MOSFETs. Thanks to an experimental extraction methodology taking into account multi-subband population, we demonstrate that the short channel ballistic efficiency is slightly greater than long channel ballistic efficiency.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.1
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• pp.65-71
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• 2016

This study investigates a high-accuracy alternate QD model to estimate the characteristics of induction motor under light loads. To demonstrate the usefulness of the alternate QD model, a maximum torque per amp (MTPA) control based on the alternate model is shown to outperform MTPA control based on the standard QD model. The experimental study conducted in this work exhibits that the MTPA control based on the alternate QD model tracks torque commands between 20 Nm and 30 Nm with 5% error, whereas the MTPA control based on the standard QD model generates torques lower by over 23% compared with the aforementioned torque commands. This result indicates that the alternate QD model is a highly accurate model for induction motors under light loads.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.131-137
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• 2014

A 120 GHz voltage controlled oscillator (VCO) with a divider chain including an injection locked frequency divider (ILFD) and six static frequency dividers is demonstrated using 65-nm CMOS technology. The VCO is designed based on the LC cross-coupled push-push structure and operates around 120 GHz. The 60 GHz ILFD at the first stage of the frequency divider chain is based on a similar topology as the core of the VCO to ensure the frequency alignment between the two circuit blocks. The static divider chain is composed of D-flip flops, providing a 64 division ratio. The entire circuit consumes a DC power of 68.5 mW with the chip size of $1385{\times}835{\mu}m^2$.

• Journal of electromagnetic engineering and science
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• v.18 no.2
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• pp.141-143
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• 2018

Two 110-GHz oscillators have been developed in 65-nm CMOS technology. To study the effect of layout on the circuit performance, both oscillators had the same LC cross-coupled topology but different layout schemes of the circuit. The oscillator with the conventional cross-coupled design (OSC1), showed an output power of -3.9 dBm at 111 GHz with a phase noise of -75 dBc/Hz at 1-MHz offset. On the other hand, OSC2, with a modified cross-coupled line layout, generated an output power of -2.0 dBm at 117 GHz with a phase noise of -77 dBc/Hz at 1-MHz offset. The result indicates that the optimized layout can improve key oscillator performances such as oscillation frequency and output power.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.12
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• pp.2286-2292
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• 2008

In this paper, we design a RS(23,17) decoder for MB-OFDM(Multiband-Orthogonal Frequency Division Multiplexing) system, in which Modified Euclidean(ME) algorithm is adopted for key equation solver block. The proposed decoder has been optimized for MB-OFDM system so that it has less latency and hardware complexity. Additionally, we have implemented the proposed decoder using Verilog HDL and synthesized with Samsung 65nm library. From synthesis results, it can operate at clock frequency of 250MHz, and gate count is 20,710.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.350-350
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• 2012

본 연구에서는 Oxide 두께가 각각 4, 6 nm인 Symmetric NMOSFET의 전기적 특성 분석에 관한 연구를 진행하였다. 게이트 전압에 따른 Drain saturation current (IDSAT), Threshold Voltage(VT) 및 드레인 전압에 따른 Off-states 특성 변화를 분석하였다. 소자 측정 결과 oxide 두께가 4 nm인 경우 Vt는 0.3 V, IDSAT은 73 ${\mu}A$ (@VD=0.05)로, oxide 두께가 6 nm인 경우 Vt는 0.65 V, IDSAT은 66 ${\mu}A$ (@VD=0.05)로 각각 측정되었다. 이는 oxide 두께가 얇은 경우 게이트 전압 인가 시 Electric field 증가에 따른 것으로 판단된다. 또한 드레인 전압 인가에 따른 소자 특성 분석 결과 oxide 두께가 4nm인 경우 급격한 Gate leakage 증가를 보였으며, 이에 따라 Off-state에서의 leakage current가 증가함을 확인하였다. 본 연구는 Oxide 두께에 따른 MOSFET 소자의 전기적 특성 분석을 위해 진행되었으며, 상기 결과와 같이 oxide 두께 가변은 Idsat, Vt, leakage current 등의 주요 파라미터에 영향을 주어 NMOSFET 소자의 전기적 특성을 변화시킴을 확인하였다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.218-220
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• 2007

유기박막트랜지스터(organic thin film transistor, OTFT)의 게이트 절연막으로 PVP(poly-4-vinylphenol) 물질을 이용하여 MIM (metal-insulator-metal) 구조의 캐패시터 소자를 제작하였다. 유기 절연층의 형성은 ITO/Glass 기판 위에 PVP를 용질로, PGMEA(propylene glycol monomethyl ether acetate)를 용매로 사용하였다. 또한 열경화성 수지인 poly(melamine-co-formaldehyde)를 사용하여 cross-linked PVP 절연막을 합성하여 스핀코팅법으로 소자를 형성하였다. 제작된 소자에 대해 절연막 두께에 따른 전기적 특성을 조사한 결과 300 nm 에서 500 nm로 두께가 증가할수록 누설전류는 10.69 nA 에서 0.1 nA 로 크게 감소하였다. 또한 캐패시터 소자의 정전용량은 300 nm 의 두께에서 1.05 nF 으로 500 nm 의 두께에서의 0.65 nF 과 비교하여 보다 양호한 특성이 나타났다.

• International Journal of Precision Engineering and Manufacturing
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• v.5 no.3
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• pp.19-25
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• 2004

Pitch measurements of 150 nm one-dimensional grating standards were carried out using a contact mode atomic force microscopy with a high resolution three-axis laser interferometer. This measurement technique was named as the 'nano-metrological AFM'. In the nano-metrological AFM, three laser interferometers were aligned precisely to the end of an AFM tip. Laser sources of the three-axis laser interferometer in the nano-metrological AFM were calibrated with an I$_2$ stabilized He-Ne laser at a wavelength of 633 nm. Therefore, the Abbe error was minimized and the result of the pitch measurement using the nano-metrological AFM could be used to directly measure the length standard. The uncertainty in the pitch measurement was estimated in accordance with the Guide to the Expression of Uncertainty in Measurement (GUM). The primary source of uncertainty in the pitch-measurements was derived from the repeatability of the pitch-measurements, and its value was about 0.186 nm. The average pitch value was 146.65 nm and the combined standard uncertainty was less than 0.262 nm. It is suggested that the metrological AFM is a useful tool for the nano-metrological standard calibration.

• Textile Coloration and Finishing
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• v.26 no.4
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• pp.347-352
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• 2014

Film thickness dependent nanostructure evolution by a post annealing was investigated in poly (3-hexylthiophene):phenyl-C61-butyric acid methyl ester(P3HT:PCBM) films for organic solar cells which were fabricated by dichlorobenzene(DCB) solvent. In case of a 70nm thin film, the thermal annealing process affected to slight increment of the P3HT crystals in the surface region. On the other hand, large number of small sized P3HT crystals near the surface region was formed in the 200nm thick film. The solar cell devices showed the 3% power conversion efficiency(PCE) in 1:0.65 and 1:1 ratio(by weight) of P3HT and PCBM in 70nm and 200nm thickness conditions, respectively. Despite to the similar PCE, the short circuit current Jsc was different in 70nm and 200nm devices, which was related to the different nanostructure of P3HT:PCBM after thermal annealing.

• Journal of the Korean Applied Science and Technology
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• v.14 no.2
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• pp.65-70
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• 1997

The symmetric naphthothiazolo carbocyanine is of industrial importance as red-sensitizing dye in the spectral sensitization of emulsion microcrystals in negative film-making. The stability on the solvents of naphthothiazolo carbocyanine dye was measured by UV-Vis spectrophotometer, and then all of solvents were stabilized sensitizer. The maximum absorption peak range in various solvents was $600nm{\sim}612nm$. But it was identified that only methanol can be used to photographic emulsion.